Method for manufacturing semiconductor device

Abstract

The invention discloses a method for manufacturing a semiconductor device. The method comprises the following steps of: providing a semiconductor substrate; forming a gate layer on the semiconductor substrate; forming a blocking layer on the gate layer; etching the blocking layer and the gate layer to form a blocking pattern and a gate; washing the semiconductor substrate and the gate; forming a source electrode area and a drain electrode area in the semiconductor substrate on both sides of the gate; and removing the blocking pattern. In the method, with a blocking layer which is formed on the gate layer, impurity ions can be blocked from being filled in the semiconductor substrate below the gate layer in a process of forming the source electrode area and the drain electrode area in the semiconductor substrate on both sides of the gate, so the problem of drain current formed between the source electrode area and the drain electrode area can be solved.

Description

technical field [0001] The invention relates to the technical field of semiconductor manufacturing, in particular to a manufacturing method of a semiconductor device. Background technique [0002] With the rapid development of semiconductor manufacturing technology, in order to achieve faster computing speed, larger data storage capacity and more functions of semiconductor devices, semiconductor wafers are developing towards high integration, and the gate feature size of CMOS devices has entered deep In the sub-micron stage, the gate becomes thinner and shorter than before, so the requirements for the process are getting higher and higher. [0003] In the existing semiconductor device manufacturing technology, usually after the gate layer is formed on the semiconductor substrate, the gate layer is doped, and after doping, the gate layer is etched to form a gate; A source region and a drain region are formed in the semiconductor substrate on both sides. In the above method,...

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Problems solved by technology

[0005] Therefore, the problem in the above method is that in the step of forming the source region and the drain region, the conductive channel between the source region and the drain region of the semiconductor substrate also has doped ions entering, so that the source region and the drain region A leakage current occurs between the drain regions

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