How to form a mos transistor

Abstract

A method for forming an MOS transistor comprises providing a substrate; forming a back gate electrode, a back gate dielectric layer, a body region, a first functional layer and a front gate dielectric layer sequentially from the bottom surface of the substrate, the first functional layer being used for increasing the rate of migration of a carrier in a channel region; etching the front gate dielectric layer and the first functional layer and forming a first groove exposing a portion of the body region; conducting ion implantation on the first groove along the body region to form a heavily doped region; filling a metal layer in the first groove and forming a plug connected with the heavily doped region; and forming a second functional layer and a front gate on the surface of a front gate dielectric layer between the heavily doped regions sequentially from the bottom to the top, the second functional layer being used for reducing the leakage current of the channel region. The method for forming the MOS transistor can adjust the threshold voltage of the formed MOS transistor, improve the compatibility and matching rate of each MOS transistor in semiconductor devices and improve the performance of formed semiconductor devices.

Description

technical field [0001] The invention relates to the technical field of semiconductor manufacturing, in particular to a method for forming a MOS transistor. Background technique [0002] With the continuous development of modern high-tech industries represented by electronic communication technology, the total output value of the world's integrated circuit industry is growing at a rate of 30% every year. Static random access memory is an important component in integrated circuits, which has small size and high density. Among semiconductor memory devices, Static Random Access Memory (SRAM) has advantages of lower power consumption and faster operation speed than Dynamic Random Access Memory (DRAM) devices. Static random access memory can easily locate the physical unit through the bitmap test equipment to study the effective mode of the product. In addition, the yield rate of the SRAM can be used as an important index to measure the yield rate of the whole process of a semic...

AI Technical Summary

Problems solved by technology

[0006] However, as the feature size of transistors continues to decrease, changing the thickness of the sidewall will undoubtedly increase the volume occupied by the MOS transistor, which is not conducive to the reduction of the feature size of the transistor.

Images