Tuning work function of p-metal work function films through vapor deposition

Abstract

The present disclosure relates to a method for forming a p-metal work function nitride film having a desired p-work function on a substrate, including: adjusting one or more of a temperature of a substrate, a duration of one or more temporally separated vapor phase pulses, a ratio of a tungsten precursor to a titanium precursor, or a pressure of a reaction to tune a work function of a p-metal workfunction nitride film to a desired p-work function, and contacting the substrate with temporally separated vapor phase pulses of the tungsten precursor, the titanium precursor, and a reactive gas toform a p-metal work function nitride film thereon having the desired p-work function.

Description

technical field [0001] Embodiments of the present disclosure relate generally to the field of semiconductor fabrication processes and, in particular, to vapor deposition methods for work function tuning of p-metal films. Background technique [0002] Metal-oxide-semiconductor field-effect-transistor (MOSFET) such as fin field-effect transistor (finfield-effect transistor; FinFET) in 10nm technology node and other technology nodes with p metal film ), however the inventors have observed that there are still numerous challenges in this field. For example, the development of transistor technology to more advanced nodes (n < 10 nm) requires the development of low-resistivity work function metals (eg, p-metals) in transistor devices. Additionally, the threshold voltage (Vt) tuning range is greatly limited by conventional film thickness scaling due to the limited space available in the gate structure. Therefore, for work function control of p-metal films, the ability to tune ...

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Problems solved by technology

[0003] Furthermore, the inventors have observed that although some metal nitride carbide films have a desired work function, these metal nitride carb

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