Doping structure capable of improving modulation efficiency of depletion silicon-based electrooptical modulator
An electro-optical modulator and modulation efficiency technology, applied in the field of doping structures, can solve the problems of difficulty, increase in carrier absorption loss, etc., and achieve the effects of reducing absorption loss, increasing overlap integral, and improving modulation efficiency
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[0024] In order to make the objectives, technical solutions, and advantages of the present invention clearer, the following further describes the present invention in detail in conjunction with specific embodiments and with reference to the accompanying drawings.
[0025] The doping structure for improving the modulation efficiency of the depletion silicon-based electro-optic modulator provided by the present invention uses the carrier dispersion effect for electro-optic modulation, and by introducing a non-planar U-shaped waveguide cross-section doped structure to increase The overlap integration of the optical field mode and the carrier depletion region in the waveguide is achieved, and the modulation efficiency is improved compared with the traditional horizontal or vertical planar doped structure. At the same time, since the impurity doping concentration does not need to be changed, it does not increase the carrier absorption loss. On the contrary, due to the increase of the d...
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