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LED epitaxial growth method for improving light-emitting efficiency

A technology of epitaxial growth and luminous efficiency, applied in electrical components, circuits, semiconductor devices, etc., can solve problems such as affecting the energy saving effect of LEDs and low luminous efficiency of LEDs, so as to improve the internal quantum efficiency of LEDs, improve recombination efficiency, and improve overlap. The effect of points

Inactive Publication Date: 2018-08-24
XIANGNENG HUALEI OPTOELECTRONICS
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Problems solved by technology

At present, the scale of domestic production of LEDs is gradually expanding, but LEDs still have the problem of low luminous efficiency, which affects the energy-saving effect of LEDs.

Method used

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  • LED epitaxial growth method for improving light-emitting efficiency
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  • LED epitaxial growth method for improving light-emitting efficiency

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Embodiment 2

[0052] The LED epitaxial growth method for improving luminous efficiency provided in this embodiment uses MOCVD to grow high-brightness GaN-based LED epitaxial wafers, and uses high-purity H 2 or high purity N 2 or high purity H 2 and high purity N 2 The mixed gas as the carrier gas, high-purity NH 3 As the N source, the metal-organic source trimethylgallium (TMGa) is used as the gallium source, trimethylindium (TMIn) is used as the indium source, and the N-type dopant is silane (SiH 4 ), trimethylaluminum (TMAl) as the aluminum source, and the P-type dopant as magnesium dicene (CP 2 Mg), the reaction pressure is between 70mbar and 900mbar. The specific growth method is as follows (for the epitaxial structure, please refer to figure 2 ):

[0053] A LED epitaxial growth method for improving luminous efficiency, comprising: processing a substrate, growing a low-temperature buffer layer GaN, growing an undoped GaN layer, growing an N-type GaN layer doped with Si, and alter...

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Abstract

The application discloses an LED epitaxial growth method for improving light-emitting efficiency. The method comprises: processing a substrate, growing a low-temperature buffer layer GaN, growing an undoped GaN layer, growing a Si-doped N-type GaN layer, alternately growing InxGa (1-x)N / GaN light-emitting layers, growing an AlyGa(1-y) N electron blocking layer, growing a Mg-doped P-type GaN layer,and performing cooling, wherein the AlyGa (1-y) N electron blocking layer successively comprises, from bottom to top, an Al component linear increase AlyGa(1-y)N-1 layer, an Al component constant AlyGa(1-y)N-2 layer, and an Al component linear decrease the AlyGa(1-y)N-3 layer. The method improves the hole injection efficiency and the electron confinement ability by designing a new AlyGa(1-y)N electron blocking layer structure, thereby improving the light-emitting efficiency of the LED.

Description

technical field [0001] The invention belongs to the technical field of LEDs, and in particular relates to an LED epitaxial growth method for improving luminous efficiency. Background technique [0002] A light-emitting diode (Light-Emitting Diode, LED) is a semiconductor electronic device that converts electrical energy into light energy. When electric current flows, electrons and holes recombine in it to emit monochromatic light. As a high-efficiency, environmentally friendly, and green new solid-state lighting source, LED has the advantages of low voltage, low power consumption, small size, light weight, long life, high reliability, and rich colors. At present, the scale of domestic production of LEDs is gradually expanding, but LEDs still have the problem of low luminous efficiency, which affects the energy-saving effect of LEDs. [0003] Therefore, providing an LED epitaxial growth method to improve the luminous efficiency of LED is a technical problem to be solved urg...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L33/00H01L33/14
CPCH01L33/007H01L33/14
Inventor 徐平
Owner XIANGNENG HUALEI OPTOELECTRONICS
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