Low-pressure metal organic chemical vapour phase depositing apparatus for zinc oxide and process thereof

A kind of equipment and zinc source technology, which is applied in the field of low-pressure metal-organic chemical vapor deposition equipment for zinc oxide growth and its technology, can solve the problems of poor growth quality of ZnO film, difficulties in p-type or high-resistance doping of ZnO materials, substrate , Samples and reaction chambers are susceptible to air pollution, etc., to achieve uniform heating and distribution

Inactive Publication Date: 2005-07-27
JILIN UNIV +2
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  • Abstract
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Problems solved by technology

[0004] 1. Due to Zn(C 2 h 5 ) 2 and [Zn(CH 3 ) 2 ] both with O 2 Gas phase reaction is very easy to occur. If these two sources are simultaneously introduced into the reaction chamber through the main source gas path (11) or the auxiliary gas path (12), (13), they will meet in the space of the reaction chamber before reaching the substrate, and a gas phase reaction will occur. Reaction, thereby growing into ZnO particles, deposited on the su...

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  • Low-pressure metal organic chemical vapour phase depositing apparatus for zinc oxide and process thereof
  • Low-pressure metal organic chemical vapour phase depositing apparatus for zinc oxide and process thereof
  • Low-pressure metal organic chemical vapour phase depositing apparatus for zinc oxide and process thereof

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Embodiment Construction

[0025] The technical features of the present invention will be further described below in conjunction with the ZnO thin film growth process.

[0026] The growth process of ZnO thin film is roughly as follows:

[0027] ①Put the substrate (sapphire, Si, GaAs or ZnO, etc.) on the sample tray rack (22) of the pretreatment chamber (102) after cleaning and etching, and then place the sample tray rack (22) with the sample on the On the sample stage (23), open the vacuum system of the sample pretreatment chamber (102) to evacuate the sample pretreatment chamber (102) through the pretreatment chamber air hole (24), when the vacuum degree reaches 10 -1 ~10 -3 During Pa, open plasma generator (25), carry out plasma cleaning 5~10 minutes to sample;

[0028] The steps of cleaning and etching the substrate are as follows: ultrasonic cleaning with toluene for 3 minutes, ultrasonic cleaning with acetone for 3 minutes, ultrasonic cleaning with ethanol for 3 minutes, and then recirculation on...

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Abstract

The invention was about low voltage metal organic chemistry vapour deposition equipment and the preparation. The system was made up of gas transport system, reaction chamber, sample pretreatment chamber, control system, tail gas treatment system. The sample pretreatment chamber was made up of ectotheca, sample pallet shelf, sample desk, gas bleed spore, plasma generator, flange, plate valve of switch between the sample pretreatment chamber and reaction chamber, flange of plate valve, magnetic transmit bar, magnetic cannula, flange of transmit bar. Its advantages include increased the growing of ZnO film and uniformity, benefit for the P type and intermingle of high impedance.

Description

technical field [0001] The invention relates to equipment for growing ZnO thin film materials of wide bandgap semiconductors and a growth process thereof, in particular to a metal organic compound vapor deposition (MOCVD) equipment working under low pressure conditions and a process method for growing ZnO thin film materials using the equipment. Background technique [0002] Zinc oxide (ZnO) material is another important wide-bandgap semiconductor material that has been hotly researched in the world's optoelectronic field after gallium nitride (GaN). characteristic. ZnO also has higher melting point and exciton binding energy, higher exciton gain, lower temperature required for epitaxial growth, lower cost, easy etching and more convenient subsequent processing technology, etc., which are superior to GaN. It has greater development potential than GaN. There are many methods for the growth of ZnO thin film materials, such as evaporation, magnetron sputtering, ion beam sputt...

Claims

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Application Information

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IPC IPC(8): C23C16/455C30B25/02C30B25/08C30B25/10C30B25/12C30B25/14
Inventor 杜国同杨树人王秋来胡礼中
Owner JILIN UNIV
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