IGBT module life prediction method under non-stationary working condition

A technology of life prediction and life prediction model, which is applied in the direction of single semiconductor device testing, special data processing applications, instruments, etc., and can solve problems such as poor prediction accuracy of life prediction models

Active Publication Date: 2019-05-10
BEIHANG UNIV
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  • Application Information

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Problems solved by technology

With the improvement of IGBT module structure technology, the existing life prediction model has poor prediction accuracy under narrow junction temperature amplitude; at the same time, IGBT modules are often used in non-stationary working conditions, so it is necessary to IGBT module life prediction

Method used

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  • IGBT module life prediction method under non-stationary working condition
  • IGBT module life prediction method under non-stationary working condition
  • IGBT module life prediction method under non-stationary working condition

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Embodiment Construction

[0039] In the following, the present invention will be further described in detail in conjunction with the accompanying drawings and the IGBT junction temperature prediction method under non-stationary working conditions.

[0040] The invention discloses a method for simulating the extreme low temperature characteristics of a typical CMOS device, and the specific steps are as follows:

[0041] Step 1: Investigation of the degradation mechanism of the IGBT module

[0042]The degradation mechanism of the IGBT module can be divided into the degradation mechanism related to the chip (such as time-dependent dielectric breakdown, electromigration and aluminum metallization reconstruction, etc.) and the degradation mechanism related to the module package. Chip-related degradation is usually related to semiconductor physics, which is caused by internal defects in silicon materials and eventually leads to device degradation and failure. Although this failure is different from the degr...

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Abstract

The invention relates to an IGBT module life prediction method under a non-stationary working condition. The method comprises the following steps: 1) investigation on degradation mechanisms of an IGBTmodule; 2) establishment of an electrical model of the IGBT module; 3) parameter decoupling of the IGBT electrical model based on Simulink; 4) junction temperature on-line monitoring with degradationcharacteristics being considered; 5) establishment of a narrow junction temperature amplitude life prediction model; 6) construction of a power cycle test platform; 7) establishment of a narrow junction temperature amplitude life prediction model; and 8) establishment of an IGBT module life prediction model under the non-stationary working condition. The method is characterized by, to begin with,calculating a junction temperature-time curve of a power module under actual working conditions based on a device electro-thermal model and a work mission profile, and extracting corresponding junction temperature fluctuation information; then, calculating cumulative damage to the device caused by different junction temperature fluctuations based on the life prediction model of the power module;and finally, evaluating MTTF of the IGBT module under actual working conditions by combining the cycle times of each junction temperature stress. The method belongs to the technical field of life evaluation of the IGBT module.

Description

(1) Technical field: [0001] The invention relates to a method for predicting the life of an IGBT module under non-stationary working conditions, which calculates the junction temperature-time curve of the power module under actual working conditions based on the device electrothermal model and the working task profile, and extracts the corresponding junction temperature fluctuation information; and then , based on the life prediction model of the power module, the cumulative damage to the device caused by different junction temperature fluctuations is calculated; finally, the MTTF of the IGBT module under actual working conditions is evaluated by combining the number of junction temperature stress cycles. The method belongs to the technical field of IGBT module life evaluation. (two) background technology: [0002] Because the insulated gate bipolar transistor (IGBT) module has the advantages of high voltage stress, high current density, low turn-on voltage and low switching...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G01R31/26G06F17/50
Inventor 付桂翠姜贸公冷红艳程禹
Owner BEIHANG UNIV
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