Nanometer plasma array laser device and manufacturing method thereof

Abstract

The invention provides a nanometer plasma array laser device and a manufacturing method of the laser device and belongs to the technical field of optics. According to the method, photons excited by an electrical pump semiconductor nanowire p-n junction array are utilized for interacting with surface metal-dielectric films to generate surface plasmon polaritons (SPP), and then photon beams generated in a nanowire resonant cavity are restrained and regulated. According to the method, the double advantages of semiconductor nanometer structure geometric limitation and limitation and constraint of a surface plasma mode field to beams are combined, a semiconductor nanowire is utilized for integrating a working substance and the resonant cavity and achieving mode field constraint on surface plasmas, and finally the nanometer plasma laser device is formed.

Description

technical field [0001] The invention belongs to the field of optical technology, and in particular relates to a nano-plasma array laser and a manufacturing method thereof. Background technique [0002] Since the first laser was produced 50 years ago, some new nanotechnology has improved the micro-laser to a new field, which has set off a research boom of nano-laser. At present, the widely used nanolasers mainly include optically pumped nanoplasmonic lasers and electrically pumped semiconductor nanowire array lasers. [0003] Optically pumped nanoplasmonic laser consists of a single semiconductor cadmium sulfide (CdS) nanowire placed horizontally on a metal-dielectric composite film to form a nanoplasmonic laser, and laser emission is achieved through pulsed laser pumping; The nano-scale slit realizes the surface plasmon local field enhancement effect for plasmon-optical hybrid pumping, and realizes laser emission at the end of the nanowire. The excitation light mode is rest...

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Problems solved by technology

However, it has the following disadvantages: 1) the nanowire is single, which limits the power of the laser; 2) the pumping method is pulsed laser pumping, which will greatly increase the size of the laser in practical applications; 3) the working temperature is less than 10K Ultra-low temperature, not conducive to practical application

[0004] The manufacturing process of the electrically pumped semiconductor nanowire array laser is: prepare an n-type zinc oxide (ZnO) film on the substrate, and grow a p-type ZnO nanowire (hexagonal prism) array doped with antimony (Sb) on the n-type ZnO film At room temperature, electrodes are made on the substrate and the top of the nanowires for electrical pumping, and the laser is emitted from the top of the nanowires; its disadvantages are also very obvious: 1) The growth of nanowire arrays is irregular, which is not conducive to the synthesis of beams and power ; 2) Beam synthesis is not performed, laser packaging is not completed, and no device is formed

[0005] Research on nano-lasers based on zinc oxide, cadmium sulfide and other materials has attracted widespread attention from scientists. By introducing semiconductor nanowires or nano-arrays, micro-lasers and nano-lasers have reached the level of the diffraction limit, but due to the existence of the diffraction limit, semiconductor nano-lasers have been limited. Laser Minimum Size

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