38 results about "Atom binding" patented technology

Provided are organic silicon oxide fine particles which can be formed into a porous film having a dielectric constant and mechanical strength expected as a high-performance porous insulating film and having excellent chemical stability, and a preparation method thereof. Described specifically, provided are an organic silicon oxide fine particle comprising a core containing at least an inorganic silicon oxide or an organic silicon oxide and a shell containing at least an organic silicon oxide and being formed around the core by using shell-forming hydrolyzable silane in the presence of a basic catalyst; wherein of silicon atoms constituting the core or the shell, a ratio (T / Q) of a number (T) of silicon atoms having at least one bond directly attached to a carbon atom to a number (Q) of silicon atoms having all of four bonds attached to an oxygen atom is greater in the shell than in the core; and wherein the shell-forming hydrolyzable silane comprise at least a hydrolyzable silane compound having two or more hydrolyzable-group-having silicon atoms bound to each other via a carbon chain or via a carbon chain containing one silicon atom between some carbon atoms.

Provided are organic silicon oxide fine particles which can be formed into a porous film having a dielectric constant and mechanical strength expected as a high-performance porous insulating film and having excellent chemical stability, and a preparation method thereof. Described specifically, provided are an organic silicon oxide fine particle comprising a core containing at least an inorganic silicon oxide or an organic silicon oxide and a shell containing at least an organic silicon oxide and being formed around the core by using shell-forming hydrolyzable silane in the presence of a basic catalyst; wherein of silicon atoms constituting the core or the shell, a ratio (T / Q) of a number (T) of silicon atoms having at least one bond directly attached to a carbon atom to a number (Q) of silicon atoms having all of four bonds attached to an oxygen atom is greater in the shell than in the core; and wherein the shell-forming hydrolyzable silane comprise at least a hydrolyzable silane compound having two or more hydrolyzable-group-having silicon atoms bound to each other via a carbon chain or via a carbon chain containing one silicon atom between some carbon atoms.

A putty-like heat transfer material according to the present invention comprises heat-conductive particles dispersed in an organopolysiloxane, wherein the organopolysiloxane is a silicone sol produced by partially crosslinking a base polymer (a) with a crosslinking component (b), wherein the base polymer (a) comprises an organopolysiloxane that contains at least two alkenyl groups each bound to a silicon atom located at the terminal of the molecular chain (also referred to as "silicon-atom-bound alkenyl groups") per molecule on average, the crosslinking component (b) comprises an organopolysiloxane that contains at least two hydrogen atoms each bound to a silicon atom per molecule on average, and the partial crosslinking is carried out at such a ratio that the amount of the crosslinking component (b) is less than 1 mole relative to 1 mole of the silicon-atom-bound alkenyl group contained in the component (a). Thus, provided are: a putty-like heat transfer material which can exhibit good fluidability even when an inorganic particulate filler is added in a larger amount, can be extruded through a tube or a syringe readily, and can have a self-shape-retaining property when being allowed to stand; and a method for producing the putty-like heat transfer material.

A GaAs semiconductor substrate includes a surface layer. When an atomic ratio is to be calculated using a 3d electron spectrum of Ga atoms and As atoms measured at the condition of 10° for the photoelectron take-off angle θ by X-ray photoelectron spectroscopy, the structural atomic ratio of all Ga atoms to all As atoms (Ga) / (As) at the surface layer is at least 0.5 and not more than 0.9, the ratio of As atoms bound with O atoms to all Ga atoms and all As atoms (As—O) / {(Ga)+(As)} at the surface layer is at least 0.15 and not more than 0.35, and the ratio of Ga atoms bound with O atoms to all Ga atoms and all As atoms (Ga—O) / {(Ga)+(As)} at the surface layer is at least 0.15 and not more than 0.35. Accordingly, there is provided a GaAs semiconductor substrate having a surface cleaned to an extent allowing removal of impurities and oxides at the surface by at least thermal cleaning of the substrate.

Neutrons and multi-neutron particles are generated in a specially configured solid iron electrical solenoid in which photoneutrons from a metallic strip irradiated by laser photons are selectively polarized and fused together. Nuclear binding energy is released by the nuclear reaction. These neutron generators can be joined in a series so that one feeds neutrons into the next neutron generator to increase the output neutron flux density.

Provided is a catalyst used for a living radical polymerization method, which contains a central element consisting of carbon and at least one halogen atom binding to the central element. Further, a hydrocarbon compound can be used as a catalyst precursor. A monomer having a radical-reactive unsaturated bond is subjected to a radical polymerization reaction in the presence of the catalyst, consequently a polymer having narrow molecular weight distribution can be obtained, and thus the cost of the living radical polymerization can be remarkably reduced. The present invention is significantly more environmentally friendly and economically excellent than conventional living radical polymerization methods, due to advantages such as low toxicity of the catalyst, low amount of the catalyst used, high solubility of the catalyst, mild reaction conditions, and no coloration / no odor (no need of any post-treatments for a molded article), and the like.

The invention discloses a metal-based coating reinforced by laser cladding tungsten carbide ceramic particles, which includes alloy powder, the alloy powder includes tungsten powder and graphite with a molar ratio of 2:1, and the alloy powder also includes reduced iron powder and chromium powder , nickel powder, boron powder, silicon powder and copper powder; the composition and percentage mass ratio of further preferred alloy powder are respectively: tungsten powder 55-60%, graphite 7-9%, reduced iron powder 23-30%, chromium 0-3% nickel powder, 2-6% nickel powder, 0.3-1% boron powder, and 0.4-1% silicon powder; the invention also discloses a processing method for laser cladding tungsten carbide ceramic particle reinforced metal-based coating, the invention The tungsten carbide particle reinforcement phase was successfully prepared by laser cladding in-situ synthesis technology to strengthen the iron-based composite material. There is a transition layer between the coating and the substrate, indicating that they are atomically bonded and have a high bonding strength.

The invention relates to a method for producing a semiconductor structure, characterised in that the method comprises a step (201) of depositing a crystalline passivation layer continuously covering the entire surface of a layer based on group III nitrides, said crystalline passivation layer, which is deposited from a precursor containing silicon atoms and a flow of nitrogen atoms, consisting of silicon atoms bound to the surface of the layer based on group III nitrides and arranged in a periodical arrangement such that a diffraction image of said crystalline passivation layer obtained by grazing-incidence diffraction of electrons in the direction [1-100] comprises:two fractional order diffraction lines (0, −⅓) and (0, −⅔) between the central line (0, 0) and the integer order line (0, −1), andtwo fractional order diffraction lines (0, ⅓) and (0, ⅔) between the central line (0, 0) and the integer order line (0, 1).

A GaAs semiconductor substrate includes a surface layer. When an atomic ratio is to be calculated using a 3d electron spectrum of Ga atoms and As atoms measured at the condition of 10° for the photoelectron take-off angle θ by X-ray photoelectron spectroscopy, the structural atomic ratio of all Ga atoms to all As atoms (Ga) / (As) at the surface layer is at least 0.5 and not more than 0.9, the ratio of As atoms bound with O atoms to all Ga atoms and all As atoms (As—O) / {(Ga)+(As)} at the surface layer is at least 0.15 and not more than 0.35, and the ratio of Ga atoms bound with O atoms to all Ga atoms and all As atoms (Ga—O) / {(Ga)+(As)} at the surface layer is at least 0.15 and not more than 0.35. Accordingly, there is provided a GaAs semiconductor substrate having a surface cleaned to an extent allowing removal of impurities and oxides at the surface by at least thermal cleaning of the substrate.

A morphinan derivative represented by the following general formula (I):(wherein R1 represents hydrogen, C1-10 alkyl, cycloalkylalkyl where the cycloalkyl moiety has 3 to 6 carbon atoms, and the alkylene moiety has 1 to 5 carbon atoms, etc.,R2 represents heterocyclic ring containing 1 to 4 heteroatoms selected from N, O and S and at least one carbon atom as ring-constituting atoms, containing at least one set of adjacent ring-constituting atoms bound by a double bond, and further substituted with at least one oxo group,Y binds to a carbon atom as a ring-constituting atom of R2,R3, R4, and R5 represent hydrogen; hydroxy, etc.,R6a and R6b represent hydrogen, etc.,R7 and R8 represent hydrogen, etc.,R9 and R10, which are the same or different, represent hydrogen, etc.,X represents O or CH2, andY represents C(═O)),a tautomer or stereoisomer of the compound, or a pharmaceutically acceptable salt thereof, or a solvate thereof is used as an anxiolytic drug, antidepressant, etc.

A morphinan derivative represented by the following general formula (I):(wherein R1 represents hydrogen, C1-10 alkyl, cycloalkylalkyl where the cycloalkyl moiety has 3 to 6 carbon atoms, and the alkylene moiety has 1 to 5 carbon atoms, etc.,R2 represents heterocyclic ring containing 1 to 4 heteroatoms selected from N, O and S and at least one carbon atom as ring-constituting atoms, containing at least one set of adjacent ring-constituting atoms bound by a double bond, and further substituted with at least one oxo group,Y binds to a carbon atom as a ring-constituting atom of R2,R3, R4, and R5 represent hydrogen; hydroxy, etc.,R6a and R6b represent hydrogen, etc.,R7 and R8 represent hydrogen, etc.,R9 and R10, which are the same or different, represent hydrogen, etc.,X represents O or CH2, andY represents C(═O)),a tautomer or stereoisomer of the compound, or a pharmaceutically acceptable salt thereof, or a solvate thereof is used as an anxiolytic drug, antidepressant, etc.

An object of the present invention is to provide a curable resin having a silyl group at the terminal that is also moisture-hardening resin which has lower in viscosity when it is used and provides superior adhesiveness when it is utilized for adhesive, sealant, and paint. The object of the invention could be achieved by a curable resin that has silicon atom-containing groups having a silicon atom bound to one or more hydrolysable groups such as alkoxy groups, acetoxy groups and oxim groups at the ends of the molecule, thioether and hydroxyl groups in the molecule, and a polymer having a polyoxyalkylene, (meth)acrylic ester, or hydrocarbon polymer as the main chain skeleton.

The invention relates to a uniformly modified silicon-based composite material and its preparation method and application. The general formula of the silicon-based composite material is SiC x A y o z ; 0<x<20; 0<y<10; 0<z<10; wherein, A is among B, Al, Mg, Ca, Fe, Co, Ni, Cu, Zn, Ge, Sn, Li One or more of C, C is uniformly dispersed in the particles of the silicon-based composite material at the atomic scale, and there is no agglomeration of carbon elements above 20nm; some or all of the carbon atoms combine with the silicon atoms to form disordered Si‑C bonds ; In the Focused Ion Beam-Transmission Electron Microscope F I B-TEM test of the silicon-based composite material, the energy spectrum surface scan of the particle cut surface shows that the silicon element, carbon element, A element, and oxygen element are uniformly distributed in the particle; the silicon-based composite material The microstructure is a heterogeneous dispersed structure; the average particle diameter D of the silicon-based composite particles 50 1nm‑100μm, the specific surface area is 0.5m 2 / g‑40m 2 / g; the mass of the carbon atom accounts for 0.1%-40% of the mass of the silicon-based composite material; the mass of the A element accounts for 3%-40% of the mass of the composite particle.

To provide a heat-curable and low-specific gravity liquid silicone rubber composition excellent in storage stability and, after cured, giving a silicone rubber molded product slight in hardness change by heat and slight in compression set. The heat-curable and low-specific gravity liquid silicone rubber composition comprises (A) a liquid diorganopolysiloxane containing in one molecule at least two silicon atom-bound alkenyl groups and having a viscosity of 100-100,000 mPa.s, (B) an organopolysiloxane having in one molecule at least two silicon atom-bound hydrogen atoms, (C) a hydrosilylation catalyst, (D) glass microballoon powder, (E) a specific organopolysiloxane oligomer having silicon atom-bound alkoxysilyl group-containing organic groups, and (F) an organopolysiloxane oligomer whose molecular chain both ends are blocked with diorganohydroxysilyl groups.

This invention concerns a method to switch on and off the exchange interaction J between electron spins bound to donor atoms. The electron spins have the role of ‘qubits’ to carry quantum information, and the exchange interaction J has the role of mediator for two-qubit quantum logic operations. The invention aims at exploiting the existence of a further magnetic interaction, the hyperfine interaction A, between each electron spin and the nuclear spin of the donor atom (301, 302) that binds the electron. The hyperfine interaction A, together with the ability to read out (504) and control the state of the nuclear spins, is used to suppress the effect of the exchange interaction J at all times, except while a quantum logic operation is being performed. In this way, the result of the quantum logic operation is not distorted after the operation has taken place. In a further aspect, the invention concerns an electronic device where the method can be practically implemented, and a large scale device made up of many of the devices.

The invention provides adhesion type grapheme nano material wire connection ironware and a connection method. The adhesion type grapheme nano material wire connection ironware and the connection method solves the difficulties in construction of adhesion type grapheme nano material wires and provides technical support for engineering application of the grapheme nano material wires. The connection ironware comprises a grapheme membrane connection casing pipe which is composed of fan-shaped sheets, wherein the section of each fan-shaped sheet is in a circular arc shape. The inner surface and the outer surface of each fan-shaped sheet are in a smooth structure. A through hole is formed in the grapheme membrane connection casing pipe and penetrates the fan-shaped sheets along the radial direction of the grapheme membrane connection casing pipe. The width of the through hole is less than that of each fan-shaped sheet. The connection method adopts a hot-gas method. Two wires to be connected are connected with each other through the connection ironware. Atom binding force exists in the connection position. The connection position guarantees tension transmission and simultaneously transmits electric load.