191results about How to "Inhibition of defect generation" patented technology

In a transflective type LCD provided with a transparent region and a reflection region in each pixel, when an irregular film 11 is formed on an active matrix substrate 12 to form irregularities of a reflection electrode film 6, the irregular film 11 is specifically formed to almost the same film thickness in both the transparent region and the reflection region to provide substantially the same inter-substrate gap in these two regions so that they may have almost the same V-T characteristics and also the reflection electrode film 6 made of Al / Mo is formed so as to overlap with a transmission electrode film 5 made of ITO all around an outer periphery of the transmission electrode film 5 by a width of at least 2 μm, thus suppressing electric erosion from occurring between the ITO and Al substances at the edge of the transmission electrode film 5.

A method and a device to grow from the vapor phase, a single crystal of either SiC, a group III-nitride, or alloys thereof, at a growth rate and for a period of time sufficient to produce a crystal of preferably several centimeters length. The diameter of the growing crystal may be controlled. To prevent the formation of undesirable polycrystalline deposits on surfaces in the downstream vicinity of the single crystal growth area, the local supersaturation of at least one component of the material grown is lowered by introducing a separate gas flow comprising at least one halogen element or a combination of said halogen and hydrogen species.

A line head includes multiple light emitting element groups each including multiple light emitting elements. In each light emitting element group, the multiple light emitting elements are disposed in a two-dimensional arrangement so that a distance Gx is greater than a distance Gy. The light emitting element groups are arranged so that pitches Px are greater than pitches Py.

Disclosed is a method for fabricating a semiconductor device with an improved process margin obtained by preventing damage to an inter-layer insulation layer during a wet cleaning process. Particularly, the method includes the steps of: forming a plurality of a first conductive pattern having a stack pattern of a first conductive and a first hard mask; forming a first inter-layer insulation layer of a good gap-fill property with a height between the first conductive material and the first hard mask on the first conductive layer; forming a second inter-layer insulation layer; forming a second conductive layer contacted the first conductive layer between the plurality of the first conductive patterns as passing through the first and the second inter-layer insulation layers; forming a third inter-layer insulation layer; forming a plurality of second conductive patterns; forming a fourth inter-layer insulation layer; and forming a third conductive layer contacted to the second conductive layer.

The semiconductor device comprises a lower interconnection part 12 which is formed on a silicon substrate 10 and includes an inter-layer insulation film 36 formed of a low-k film 32 and a hydrophilic insulation film 34 formed on the low-k film 32, and an interconnection layer 44a, 44b buried in interconnection trenches 38a, 38b formed in the inter-layer insulation film 36 and having an interconnection pitch which is a first pitch; and an intermediate interconnection part 14 which is formed on the lower interconnection part 12 and includes an inter-layer insulation film 142 formed of low-k films 136, 140, an interconnection layer 152a, 152b buried in interconnection trenches 146a, 146b formed in the inter-layer insulation film 142 and having an interconnection pitch which is a second pitch larger than the first pitch, and an SiC film 154 formed directly on the low-k film 140 and the interconnection layer 152a, 152b.

A single mode fiber having a core, an inner cladding, a depressed cladding, and an outer cladding composed of pure silica glass. The core is surrounded in sequence with the inner cladding and the depressed cladding. The core has silica glass doped with germanium and fluorine, with a diameter (a) of 8.0-8.8 μm, a relative refractive index difference (Δ1) of 0.35-0.38%, and the contribution of fluoride (ΔF) is −0.09±0.02%. The inner cladding has silica glass doped with germanium and fluorine, with a diameter (b) of 18-21 μm and a relative refractive index difference (Δ2) of 0±0.02%. The depressed cladding has silica glass doped with fluorine, with a diameter (c) of 26-36 μm and a relative refractive index difference (Δ32) at the external interface thereof is between −0.22 and −0.35%, and a relative refractive index difference (Δ31) at the internal interface thereof is between −0.20 and −0.35%, and Δ32≦Δ31. The fiber has a good bending resistance, good mechanical properties, and extended service lifetime, and prevents the additional stresses generated by bending from passing on to the core, thereby reducing attenuation.

An image forming apparatus includes an image forming portion; a fixing portion having a fixing nip portion which heats and fixes the unfixed image and an discharge roller which discharges the recording material, wherein in the case where the recording material is the plain paper which is equal to or larger than the predetermined size, the discharge roller conveys the plain paper in a range from a front edge to a rear edge at a predetermined speed, in the case where the recording material is the plain paper smaller than the predetermined size, the discharge roller conveys the plain paper at a first speed until the rear edge passes through the fixing nip portion, and the discharge roller conveys the plain paper at a second speed higher than the first speed after the rear edge passed through the fixing nip portion.