The invention provides an electrically erasable programmable read-only memory (
EEPROM) storage array structure. The structure comprises a plurality of memory cells, drain
electrode selection wires and source
electrode selection wires, word line strobe
signal wires and control gate wires, wherein each
memory cell comprises an N trap, a drain
electrode, a source electrode, a drain electrode floating gate, a drain electrode control gate, a source electrode floating gate, a source electrode control gate and a selection gate, and the bottom part of each N trap is connected with a trap end; the drain electrode selection wires and the source electrode selection wires are alternately arrayed along an array direction, each drain electrode selection wire and each source electrode selection wire are respectively connected with the drain electrode and the source electrode of each
memory cell on the array direction, and the drain electrode selection wires and the source electrode selection wires are respectively connected up to drain signals and source signals; the word line strobe
signal wires are arrayed along a line direction, and each word line strobe
signal wire is connected with the selection gate of each
memory cell along the line direction and receives word line strobe signals; and the control gate wires are arrayed along the line direction, each control gate wire is connected with the drain electrode control gate and the source electrode control gate in each memory
cell along the line direction and receives control gate signals, so that an array structure cannot be damaged by continuous repeated
programming and erasing operations under the condition of lower various signals.