The invention relates to a preparation process of a high-uniformity conductive silicon target material. The preparation process comprises the following steps of 1, preparing materials, specifically, high-purity silicon powder and boron powder are added according to the proportion that the boron concentration content is 20-200 ppm; 2, grinding, specifically, ball milling is carried out on the mixture obtained in step 1 by using a mechanical ball mill; 3, spray granulating, specifically, the powder, with the particle size of 1-10 micros, ground in the step 2 is introduced into a spray granulation dryer for granulating, and spherical ground powder with the particle size of 40-160 micros is obtained; and 4, vacuum spraying, specifically, the spherical powder obtained in the step 3 is sprayed on the surface of a target material base material in a low vacuum environment by means of a plasma spraying mode. According to the preparation process of the high-uniformity conductive silicon target material, the quality of the target material is effectively improved, and the cost is reduced.