Method for processing silicon polished section with low-roughness concentration

Abstract

The invention relates to a processing method of low roughness silicon polished wafers, which comprises a process during which polishing treatment is carried out for silicon single crystal wafers by utilizing a polisher, and the process sequentially comprises a rough polishing process, a moderate polishing process and a fine polishing process. In the fine polishing process, the polish finish is carried out for the silicon single crystal wafers by utilizing polishing cloth and fine polishing slurries are introduced between the polishing cloth and the silicon single crystal wafer surface, and the fine polishing slurry consists of pure water and activators. The surface roughness of the silicon wafer processed by the processing method can be raised to 3 to 5 degree, the performance is steady and the resistivity is uniform.

Description

Technical field:

[0001] The invention relates to the field of physics, in particular to semiconductor materials, in particular to a silicon polishing sheet, and in particular to a processing method for a low-roughness silicon polishing sheet. Background technique:

[0002] In today's electronic communication semiconductor market of more than 200 billion US dollars in the world, more than 95% of semiconductor devices are made of silicon materials, and more than 99% of integrated circuits are made of silicon. Compared with other semiconductor materials, silicon has the advantages of cheap and abundant, easy to grow into large-sized high-purity crystals, and excellent thermal and mechanical properties. At present, the annual output of silicon single wafers in the world has reached 6 billion square inches, of which the global annual demand for 8″ silicon wafers has exceeded 2.9 billion square inches, equivalent to about 5,800 tons of single crystal.

[0003] The larger diameter...