Method for processing silicon polished section with low-roughness concentration

A technology of silicon polished sheet and low roughness, which is applied in the field of physics, can solve the problems of low film adhesion strength, unstable performance of silicon polished sheet, uneven resistivity, etc., and achieve uniform resistivity, reduced defects, and improved roughness Effect

Active Publication Date: 2009-01-28
无锡光炜电子材料有限公司
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Problems solved by technology

[0005] The object of the present invention is to provide a kind of processing method of low-roughness silicon polishing sheet, described this processing method of low-roughness silicon polishing sheet will solve the unstable performance of silicon polishing sheet in the prior art, inhomogeneous resistivity Technical problem of low film adhesion strength with silicon polished wafers

Method used

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Embodiment Construction

[0014] A method for processing a low-roughness silicon polishing wafer of the present invention includes a process of polishing a silicon single wafer using a polishing machine, and the sequence in the process of polishing a silicon single wafer using a polishing machine includes a A rough polishing process, a middle polishing process and a fine polishing process, wherein, in the fine polishing process, the silicon single wafer is polished using a polishing cloth, and the polishing cloth and the A fine polishing slurry is introduced between the surfaces of the silicon single wafer, the fine polishing slurry is composed of pure water and an activator, the weight percentage of the pure water and the activator is between 1:30, and the polishing process is performed at 28 degrees Celsius Under temperature conditions, the flow rate of fine polishing slurry per minute is 500ml, the rotational speed of the polishing machine is 75rpm, the polishing pressure is 0.13Mpa, the rotational s...

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Abstract

The invention relates to a processing method of low roughness silicon polished wafers, which comprises a process during which polishing treatment is carried out for silicon single crystal wafers by utilizing a polisher, and the process sequentially comprises a rough polishing process, a moderate polishing process and a fine polishing process. In the fine polishing process, the polish finish is carried out for the silicon single crystal wafers by utilizing polishing cloth and fine polishing slurries are introduced between the polishing cloth and the silicon single crystal wafer surface, and the fine polishing slurry consists of pure water and activators. The surface roughness of the silicon wafer processed by the processing method can be raised to 3 to 5 degree, the performance is steady and the resistivity is uniform.

Description

Technical field: [0001] The invention relates to the field of physics, in particular to semiconductor materials, in particular to a silicon polishing sheet, and in particular to a processing method for a low-roughness silicon polishing sheet. Background technique: [0002] In today's electronic communication semiconductor market of more than 200 billion US dollars in the world, more than 95% of semiconductor devices are made of silicon materials, and more than 99% of integrated circuits are made of silicon. Compared with other semiconductor materials, silicon has the advantages of cheap and abundant, easy to grow into large-sized high-purity crystals, and excellent thermal and mechanical properties. At present, the annual output of silicon single wafers in the world has reached 6 billion square inches, of which the global annual demand for 8″ silicon wafers has exceeded 2.9 billion square inches, equivalent to about 5,800 tons of single crystal. [0003] The larger diameter...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): B24B29/00B24B1/00H01L21/304C09G1/04
Inventor 李继光顾凯峰
Owner 无锡光炜电子材料有限公司
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