Preparation process of high-uniformity conductive silicon target material

Abstract

The invention relates to a preparation process of a high-uniformity conductive silicon target material. The preparation process comprises the following steps of 1, preparing materials, specifically, high-purity silicon powder and boron powder are added according to the proportion that the boron concentration content is 20-200 ppm; 2, grinding, specifically, ball milling is carried out on the mixture obtained in step 1 by using a mechanical ball mill; 3, spray granulating, specifically, the powder, with the particle size of 1-10 micros, ground in the step 2 is introduced into a spray granulation dryer for granulating, and spherical ground powder with the particle size of 40-160 micros is obtained; and 4, vacuum spraying, specifically, the spherical powder obtained in the step 3 is sprayed on the surface of a target material base material in a low vacuum environment by means of a plasma spraying mode. According to the preparation process of the high-uniformity conductive silicon target material, the quality of the target material is effectively improved, and the cost is reduced.

Description

technical field [0001] The invention relates to a high-uniformity conductive silicon target preparation process. Background technique [0002] At present, the thermal spraying process produces target materials. The pretreatment of raw materials is divided into mechanical mixing process and melting casting doping process. If mechanical mixing is used, there will be problems such as uneven doping amount and large loss during the spraying process of dopant. The melting and casting doping process is complex and costly, and the powder also has the problem of uneven composition. Contents of the invention [0003] The purpose of the present invention is to overcome the above disadvantages and provide a high-uniformity conductive silicon target preparation process, which effectively improves the quality of the target and reduces the cost. [0004] The purpose of the present invention is achieved like this: [0005] A high-uniformity conductive silicon target preparation process,...

AI Technical Summary

Problems solved by technology

[0002] At present, the thermal spraying process produces target materials. The pretreatment of raw materials is divided into mechanical mixing process and melting casting doping process. If mechanical mixing is used, there will be problems such as uneven doping amount and large loss during the spraying process of dopant. The melting and casting doping process is complex and costly, and the powder also has the problem of uneven composition