Preparation method of self-compensation back-sealing semiconductor substrate

Abstract

The invention discloses a preparation method of a self-compensation back-sealing semiconductor substrate. The preparation method comprises a technical method of growing an opposite type lightly doped epitaxial layer on a heavily doped substrate. By adopting a mean of producing a self-compensation back sealing layer before the epitaxial growth in the substrate processing stage, the method for growing lightly doped epitaxial layer in opposite conduction type in batches on the heavily doped substrate is provided to solve a problem of same-type epitaxial growth on the inner edge of a chip or the whole chip caused by lightly doped epitaxial atmosphere transoid which is resulted from a backside self-doping effect and an edge effect. With the adoption of the self-compensation back sealing technology, that the epitaxial parameters meet with the product demands still can be guaranteed even full-furnace growth is performed by using a normal-pressure epitaxial furnace.

Description

technical field [0001] The invention relates to the technical field of semiconductor microelectronics, in particular, the invention relates to a method for manufacturing a silicon-based semiconductor device and an integrated circuit. Background technique [0002] With the development of silicon-based semiconductor technology, there are more and more types of semiconductor devices such as discrete devices with specific functions, integrated circuit chips and MOS devices. Various devices have higher and higher requirements on the thickness and concentration of substrates and epitaxial layers. For example, some special devices need to process a lightly doped inversion epitaxial layer on a heavily doped substrate such as a P-type or N-type substrate with a resistivity less than 0.01Ω·cm. As we all know, it is difficult to grow epitaxial layers of the same conductivity type with high resistivity and good uniformity on heavily doped substrates, and it is even more difficult to gr...

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Problems solved by technology

[0009] The object of the present invention is to provide a method for growing lightly doped epitaxial layers with opposite conductivity types in batches on heavily doped substrates, so as to solve the inversion of the lightly doped epitaxial atmosphere caused by the self-doping effect and edge effect on the back of the substrate , leading to the problem of growing homoepitaxial layers at the edge of the wafer or the entire substrate

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