Crystal material containing seed crystal and manufacturing method and manufacturing device thereof

Abstract

The invention generally relates to a vertical directional solidification casting method using seed crystal induction, which is used for manufacturing a crystal material with a reserved crystal orientation and comprises a polycrystal material and a monocrystal material. When a traditional method for casting the crystal by using the seed crystal induction is used for producing the crystal with a bigger size, the problems that the seed crystal consumption is high, a mixed crystal is easy to generate, the internal stress is high, the monocrystal material is hard to obtain or the expected quality requirement is hard to reach and the like exist. The problems are solved by the invention through providing a gradually-changed crystal growth area of which the horizontal cross section is gradually increased, thereby, a good crystal growth effect is obtained, and the obtained cast monocrystal or polycrystal material, such as silicon or silicon germanium, has fewer defects, high quality and a good performance, and is especially suitable for the application of the semiconductor field and the photovoltaic field.

Description

technical field [0001] The present invention generally relates to casting methods using seed induced vertical solidification, such as the vertical temperature gradient solidification method (hereinafter also referred to as the VGF method) or the vertical Bridgman method (hereinafter also referred to as the VB method) or the vertical Bridgman method. The Stockbarger method (VBS method) produces relatively large crystal materials with predetermined crystal orientations, including polycrystalline and single crystal materials, especially materials such as silicon or silicon germanium, which are suitable for semiconductor and photovoltaic applications. Background technique [0002] Photovoltaic cells (or photovoltaic cells, solar cells) based on crystalline silicon should have the greatest possible efficiency of converting solar radiation power into electric current, as well as the longest possible service life and decay rate. This is determined by a variety of factors, such as t...

AI Technical Summary

Problems solved by technology

The specific method is to use the seed crystal induction method. In the VGF, VB or BVS method, a silicon single crystal seed crystal is placed at the bottom of the silicon melt to induce crystal growth. However, many attempts have failed, and none of the crystals obtained polysilicon

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