Crystal material containing seed crystal and manufacturing method and manufacturing device thereof

A seed crystal, crystal technology, applied in the field of semiconductor and photovoltaic applications such as silicon or silicon germanium materials, to achieve the effects of high photoelectric efficiency, high production efficiency, and low cost

Inactive Publication Date: 2012-01-11
赵钧永
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The specific method is to use the seed crystal induction method. In the VGF, VB or BVS method, a silicon single crystal seed crystal is placed

Method used

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  • Crystal material containing seed crystal and manufacturing method and manufacturing device thereof
  • Crystal material containing seed crystal and manufacturing method and manufacturing device thereof
  • Crystal material containing seed crystal and manufacturing method and manufacturing device thereof

Examples

Experimental program
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Effect test

Embodiment Construction

[0076] figure 1 A silicon crystal manufacturing device that adopts the silicon crystal growth process of the VGF method is shown. In order to clearly show the characteristics of the present invention, the figure only provides a schematic diagram of the crucible 1 including the seed crystal accommodation part, the crucible support device 2 and the heating device 3, and Only the relative positions are shown between the various parts, which do not represent the true proportions. according to figure 1 , the crucible is formed by a quartz crucible 1, the middle part of its bottom wall is provided with a seed crystal accommodation part 11, and a single crystal or polycrystalline seed crystal 4 is placed inside, and the upper opening of the seed crystal accommodation part is recessed into the crucible The inclined arc of the side wall expands and connects to the bottom of the side wall, forming a gradual transition part 12 . The side wall of the crucible is upright, the cavity of t...

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Abstract

The invention generally relates to a vertical directional solidification casting method using seed crystal induction, which is used for manufacturing a crystal material with a reserved crystal orientation and comprises a polycrystal material and a monocrystal material. When a traditional method for casting the crystal by using the seed crystal induction is used for producing the crystal with a bigger size, the problems that the seed crystal consumption is high, a mixed crystal is easy to generate, the internal stress is high, the monocrystal material is hard to obtain or the expected quality requirement is hard to reach and the like exist. The problems are solved by the invention through providing a gradually-changed crystal growth area of which the horizontal cross section is gradually increased, thereby, a good crystal growth effect is obtained, and the obtained cast monocrystal or polycrystal material, such as silicon or silicon germanium, has fewer defects, high quality and a good performance, and is especially suitable for the application of the semiconductor field and the photovoltaic field.

Description

technical field [0001] The present invention generally relates to casting methods using seed induced vertical solidification, such as the vertical temperature gradient solidification method (hereinafter also referred to as the VGF method) or the vertical Bridgman method (hereinafter also referred to as the VB method) or the vertical Bridgman method. The Stockbarger method (VBS method) produces relatively large crystal materials with predetermined crystal orientations, including polycrystalline and single crystal materials, especially materials such as silicon or silicon germanium, which are suitable for semiconductor and photovoltaic applications. Background technique [0002] Photovoltaic cells (or photovoltaic cells, solar cells) based on crystalline silicon should have the greatest possible efficiency of converting solar radiation power into electric current, as well as the longest possible service life and decay rate. This is determined by a variety of factors, such as t...

Claims

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Application Information

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IPC IPC(8): C30B11/00
Inventor 赵钧永
Owner 赵钧永
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