Preparation process of N-type heavily-doped phosphorus master alloy silicon rod

A preparation process and master alloy technology, applied in the directions of diffusion/doping, crystal growth, post-processing, etc., can solve problems such as influence, and achieve the effect of ensuring safety and uniform resistivity of crystal rods

Inactive Publication Date: 2013-10-23
JIANGXI SORNID HI TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

It is an important parameter in the design and production of solar cells, but it will be affected by the high temperature treatment process

Method used

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  • Preparation process of N-type heavily-doped phosphorus master alloy silicon rod
  • Preparation process of N-type heavily-doped phosphorus master alloy silicon rod

Examples

Experimental program
Comparison scheme
Effect test

Embodiment

[0032] 1. Choose a Tianlong 85 single crystal furnace, use 20" graphite heat field and 20" quartz crucible, charge 70 kg polycrystalline silicon, heat and melt;

[0033] 2. Put 520 grams of "N" high-purity red phosphorus into the quartz dopant (designed and processed according to the longitudinal temperature gradient test data of the dynamic thermal field of the single crystal furnace in the previous stage);

[0034] 3. Install the adaptable dopant on the seed crystal bayonet, lift it into the auxiliary chamber to guide the air, and then open the flip valve to lower the quartz dopant to the tested 390mm position, so that its sublimation can be automatically introduced into the silicon melt , and pull the crystal under the conditions of ingot speed--12 rpm, crucible speed--8 rpm, ingot head pulling speed--1.1mm / min, furnace pressure--2000-2500Pa;

[0035] 4. The drawn ingots can be cut into 2 cm thick round cakes, classified according to the resistivity, and the difference is 0...

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Abstract

The invention discloses a preparation process of an N-type heavily-doped phosphorus master alloy silicon rod. The preparation process comprises the following steps of: selecting a single crystal furnace, a 20 graphite thermal field and a 20 quartz crucible, and heating to melt 70kg of polycrystalline silicon; placing 520g of N high-purity red phosphorus into a quartz doper; installing an adapting doper at a seed crystal bayonet, ascending the adapting doper into an auxiliary chamber of the single crystal furnace to guide air, then, opening a flap valve, descending the quartz doper to a tested 390-mm position, enabling the air to be sublimated and automatically guided into a silicon melt, and pulling crystals under the conditions that the rotating speed of a crystal rod is 12r / min, the rotating speed of the crucible is 8r / min, the pulling speed of the head of the crystal rod is 1.1mm / min, and the pressure of the furnace is 2000-2500Pa; and cutting the pulled crystal rod into cakes with the thickness of 2cm, grading according to the electrical resistivity, then, treating by using a water quenching technology, pickling, then, preparing fragments with the size of 5-20mm by using a silicon briquette mutual-collision method, packaging according to different grades, and labeling for self use or sell. The safety in preparing the N-type heavily-doped phosphorus master alloy silicon rod is ensured, and the electrical resistivity of the crystal rod is uniform and ranges from 0.001 to 0.005ohm.cm.

Description

technical field [0001] The invention relates to a preparation process of an N-type heavily doped phosphorus master alloy silicon rod. Background technique [0002] High-purity crystalline silicon is an important solar photovoltaic material. Doping a small amount of group IIIA elements (such as boron) into single crystal silicon forms a p-type silicon semiconductor; doping a small amount of group VA elements (such as phosphorus) forms an n-type semiconductor. Both materials can be made into solar cells, which convert solar radiation into electricity. [0003] Silicon, a semiconductor element, belongs to the four main group elements in the periodic table of elements, and the number of electrons in the outermost shell of its atom is 4, which is a relatively stable element. If group III boron is added, because the outermost layer of the boron atom has only three electrons, it has one electron less than the outer layer of the silicon atom. After the boron atom is doped in the ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C30B31/06
Inventor 刘立中李英涛徐由兵傅亮曾世铭
Owner JIANGXI SORNID HI TECH
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