Continuous czochralski single crystal furnace and method capable of controlling oxygen content of monocrystalline silicon

Abstract

The invention relates to the technical field of monocrystalline silicon czochralski and provides a continuous czochralski single crystal furnace for controlling oxygen content in monocrystalline silicon, which comprises a crucible, a crucible inner dam, asealing shell and a feeder, the feeder comprises a molten silicon feeder, the molten silicon feeder is arranged above the crucible and provides liquid silicon for the crucible according to a preset speed; and the sealing shell is used for carrying out surrounding and vacuum sealing on the whole structure of the continuous Czochralski single crystal furnace. The depth of the liquid level of the liquid molten silicon in the crucible is smaller than 1/2 of the diameter of the crucible, and the maximum amount of the molten silicon in the crucible is smaller than 2/3 of the total molten silicon demand quantity of single crystal pulling. The invention also provides a continuous Czochralski single crystal method for controlling the oxygen content and/or inhibiting the COP of the single crystal silicon. The method can inhibit the exchange of oxygen atoms inside and outside the dam, reduces impurities such as oxygen atoms to inhibit the COP of monocrystalline silicon, and is effective, simple and convenient.

Description

technical field [0001] The present invention generally relates to the technical field of monocrystalline silicon Czochralski. In particular, the present invention relates to a continuous Czochralski single crystal furnace and method capable of controlling the oxygen content of single crystal silicon. Background technique [0002] Czochralski is a crystal growth method used to obtain single crystal materials such as semiconductors, metals, salts and synthetic gems. The most primitive Czochralski method is the single-shot Czochralski method, in which a crucible is used to pull a crystal rod. After pulling, the crucible will be broken due to cooling and cannot be reused. [0003] At present, the industrial production of single crystal silicon mostly adopts the Czochralski method with repeated investment, which is improved by adding a feeding device to the equipment on the basis of the single Czochralski method. In the repeated Czochralski method, the crucible is kept at a hig...

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Problems solved by technology

[0012] Aiming at the problem that granular silicon and Siemens polysilicon in the above-mentioned prior art cannot meet the quality requirements, or cannot meet the fluidity problem required by continuous feeding, and the fluid control technology cannot meet the high-purity requirement under the condition of high-temperature molten silicon, the present invention provides Developed a method to control the conveying speed of molten silicon through the crucible heater without using traditional valve technology

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