High-purity silicon carbide, silicon carbide wafer and preparation method of high-purity silicon carbide

Abstract

The invention discloses high-purity silicon carbide, a silicon carbide wafer and a preparation method of high-purity silicon carbide. The preparation method of high-purity silicon carbide comprises the steps that natural silica is pulverized and subjected to first pickling to obtain silica powder; graphene is pulverized and uniformly mixed with the silica powder, the mixture is subjected to firstsintering under a protective gas atmosphere or a purified gas atmosphere, and a first sintering product is subjected to second pickling and then subjected to second sintering under an oxidizing gas atmosphere to obtain an intermediate product A; the intermediate product A is uniformly mixed with the silica powder and then subjected to third sintering under a protective gas atmosphere or a purification atmosphere, and a third sintering product is subjected to third pickling to obtain an intermediate product B; the intermediate product B is uniformly mixed with the pulverized graphene and then subjected to fourth sintering under a protective gas atmosphere or a purification atmosphere to obtain high-purity silicon carbide. The problems are solved that preparation processes of high-purity silicon carbide in the prior art are complicated and the cost is too high.

Description

technical field

[0001] The invention relates to the technical field of new materials, in particular to a high-purity single crystal silicon, a silicon carbide wafer and a preparation method thereof. Background technique

[0002] Silicon carbide is a third-generation semiconductor material, which has more advantages than silicon semiconductor materials. The band gap of silicon carbide single crystal material is 3.26 eV, which is about 3 times that of silicon crystal, the thermal conductivity is high, about 3.3 times that of silicon crystal, and the electron saturation migration rate is high, about 2.5 times that of silicon crystal. It also has 10 times the breakdown electric field of silicon crystal. Therefore, silicon carbide can meet the new requirements of modern electronic technology for harsh conditions such as high temperature, high power, high voltage, high frequency, and radiation resistance. It is called a revolutionary semiconductor material and is used in national...

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