Barrel type furnace and method for manufacturing semiconductor

Abstract

The invention provides a barrel type furnace and a method for manufacturing a semiconductor. The barrel type furnace is suitable for the epitaxy technique, the length of a suspender is set to be 300 mm to 350 mm, the suspender is used in cooperation with detachable gaskets, the number of the gaskets on the suspender is increased or reduced according to actual needs, the vertical position of a base in the vertical direction can be adjusted, substrates borne by an upper area and a lower area are located in a good temperature control area when the epitaxy technique is carried out, and therefore after the epitaxy technique is carried out, epitaxial layers on the substrates are even in thickness and electrical resistivity, and the product yield is improved.

Description

technical field [0001] The invention relates to the technical field of semiconductor manufacturing, in particular to a barrel furnace and a semiconductor manufacturing method. Background technique [0002] The epitaxial process refers to the growth of a single crystal layer on a single crystal substrate, and the newly grown layer is called an epitaxial layer. The epitaxial process is divided into two types: homoepitaxial and heteroepitaxial. Homoepitaxy means that the epitaxial layer is made of the same material as the substrate, such as epitaxial silicon on a silicon substrate. Hetero-epitaxy means that the epitaxial layer is inconsistent with the substrate material, such as epitaxial alumina on a silicon substrate. The epitaxy process is widely used in the manufacture of bipolar devices, CMOS, silicon-based BiCMOS, germanium-silicon BiCMOS and BCD devices. For mass production of these devices, the core problem to be solved is the control of product parameters, which req...

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Problems solved by technology

[0006] The purpose of the present invention is to provide a barrel furnace and a semiconductor manufacturing method to solve the problem that the epitaxial layer often appears on the substrate carried by the upper zone and the lower zone after the epitaxial process is performed using the barrel furnace in the prior art. The phenomenon that the resistivity and thickness are not very uniform leads to the problem of low product yield

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