N type polycrystalline ingot casting equipment and process for preparing N type polycrystalline ingot

A polycrystalline ingot, N-type technology, which is applied in the field of N-type polycrystalline ingot equipment and its preparation, can solve the problems of waste of production capacity, low yield, and high cost, and achieves lower production costs, uniform resistivity, and higher The effect of homogeneity

Inactive Publication Date: 2015-07-29
王进
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Problems solved by technology

However, the segregation coefficient of the dopant phosphorus element of N-type silicon wafers is relatively low, and the polycrystalline ingot process plan supplied as the mainstream P-type silicon wafers cannot obtain sufficiently long silicon rods with qualified resistivity, and the yield is extremely low. As a result, the cost is extremely high, and N-type polysilicon wafers cannot be provided according to the original production process of P-type silicon wafers, which will lead to a large amount of waste of production capacity and delay the progress of the industry
[0003] The solution invented by Zhejiang University to make up for the yield by adding gallium as a compensating dopant will bring about metal problems, and the silicon material in the tail section will be unconditionally scrapped, which will increase the cost

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  • N type polycrystalline ingot casting equipment and process for preparing N type polycrystalline ingot
  • N type polycrystalline ingot casting equipment and process for preparing N type polycrystalline ingot

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Embodiment Construction

[0023] All features disclosed in this specification, or steps in all methods or processes disclosed, may be combined in any manner, except for mutually exclusive features and / or steps.

[0024] Any feature disclosed in this specification (including any appended claims, abstract and drawings), unless expressly stated otherwise, may be replaced by alternative features which are equivalent or serve a similar purpose. That is, unless expressly stated otherwise, each feature is one example only of a series of equivalent or similar features.

[0025] like figure 1 The shown N-type polycrystalline ingot casting equipment includes an upper cavity 2 and a lower cavity 1, the upper cavity 2 is covered on the lower cavity 1, and the bottom of the lower cavity 1 is an overflow plate 3 , a lower insulation board 4 is set above the overflow pan 3 . The upper cavity 2 is provided with a quartz crucible 5, the bottom of the quartz crucible 5 is a heat exchange block 6, a heater 9 is provide...

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Abstract

The invention provides N type polycrystalline ingot casting equipment and a process for preparing an N type polycrystalline ingot. According to the N type polycrystalline ingot casting equipment, an improvement, namely additionally arranging a set of secondary feeding devices, is made on original equipment for preparing a P type polycrystalline cast ingot, so that the N type polycrystalline ingot can be cast, no equipment needs to be changed, and thus the production cost is reduced. By the adoption of the process disclosed by the invention, the electrical resistivity of the N type polycrystalline ingot prepared by adopting the equipment provided by the invention is more uniform, and the homogeneity of a battery piece is improved.

Description

technical field [0001] The invention relates to N-type polycrystalline ingot casting equipment and a preparation process thereof, belonging to the technical field of polycrystalline silicon ingot casting. Background technique [0002] With the continuous development of the photovoltaic industry, the technology of solar cells has made great progress. Among them, the technology of N-type solar cells is regarded as a strategic high point in the future by major companies. Compared with P-type batteries, N-type solar cells have higher The high conversion efficiency can further drive the power generation per unit area of ​​photovoltaic modules and the installed cost. However, the segregation coefficient of the dopant phosphorus element of N-type silicon wafers is relatively low, and the polycrystalline ingot process plan supplied as the mainstream P-type silicon wafers cannot obtain sufficiently long silicon rods with qualified resistivity, and the yield is extremely low. As a re...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C30B28/06C30B29/06
Inventor 王进
Owner 王进
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