874 results about "Storage phosphor" patented technology

A device includes a first light-emitting subassembly to emit light at a first correlated color temperature (CCT) comprising a first phosphor and a first light-emitting device positioned to excite the first phosphor. The device also includes a second light-emitting subassembly to emit light at a second CCT comprising a second phosphor and a second light-emitting device positioned to excite the second phosphor. The device also includes a third light-emitting device to emit light at a third CCT. The device may also include a control circuit configured to provide first controlled power to the first light-emitting device, second controlled power to the second light-emitting device, and third controlled power to the third light-emitting device. The device includes one or more inputs to the control circuit to provide power, brightness information, and target color temperature information to the control circuit.

The invention provides an LED packaging device and a preparation method and application thereof, and relates to the technical field of semiconductor devices.The preparation method comprises the steps that packaging silica gel and fluorescent powder are mixed according to a preset proportion, and then a film with the preset thickness is prepared through a film scraping machine; curing the membrane at a first preset temperature for a first preset time, and completing primary curing to obtain a semi-cured fluorescent sheet; transferring the semi-cured fluorescent sheet to the flip LED chip which is subjected to die bonding in the bracket, and carrying out vacuum pressure sinking, so that the semi-cured fluorescent sheet is completely attached to the surface and the side surface of the flip LED chip; curing the semi-cured fluorescent sheet subjected to vacuum pressure sinking at a second preset temperature for a second preset time, and completing secondary curing to obtain a cured finished product; according to the LED packaging device and the manufacturing method thereof, the technical problems that in the prior art, the stability of the dispensing glue amount of the LED packaging device is poor, fluorescent powder is not evenly distributed, and consequently the brightness and the concentration degree are reduced can be solved.

A phosphor composition includes a red phosphor material having a red decay rate and a green phosphor material having a green decay rate. The red phosphor material includes a Mn4+ doped phosphor of Formula I and a Eu3+ doped uranium phosphor, and a difference between the red decay rate and the green decay rate is no more than 7 ms, AxMFy:Mn4+ (I), wherein A is Li, Na, K, Rb, Cs, or a combination thereof; M is Si, Ge, Sn, Ti, Zr, Al, Ga, In, Sc, Hf, Y, La, Nb, Ta, Bi, Gd, or a combination thereof; x is an absolute value of a charge of the MFy ion; and y is 5, 6 or 7. A device is also provided.

The invention is suitable for the technical field of inorganic luminescent materials, and provides a fluorescent powder material based on a double-perovskite structure and a preparation method and application thereof. The general chemical formula of the fluorescent powder is Ca2AlNbO6: xEu < 3 + >, wherein x is a molar fraction of 0.06 to 0.30; the excitation spectrum coverage range of the fluorescent powder under the condition of monitoring the emission wavelength of 615 nm is 260-500 nm, and the emission main peak is located at 615 nm; when x is equal to 0.18, the quantum efficiency under the excitation of 396nm ultraviolet light is greater than or equal to 91%, and the red light emission ratio is greater than or equal to 85%. According to the invention, Ca2AlNbO6 double perovskite is taken as a substrate, and a red fluorescent powder material with wide-spectrum excitation and high quantum efficiency is designed through Eu < 3 + > high-concentration doping and local symmetry regulation and control design engineering, so that the characteristics of high quantum efficiency, efficient red light emission, wide-spectrum excitation and excellent concentration quenching resistance are realized.

The invention relates to the technical field of luminescent materials, and discloses a preparation method and application of a transition metal and chalcogen ion doped metal halide high-efficiency wide-spectrum luminescent material, the chemical formula of the transition metal and chalcogen ion doped metal halide is Cs2Sn1-x-yCl6: x% Te < 4 + >, yMo < 4 + >, the ultra-wideband fluorescent powder converted light emitting diode (LED) covers the range from visible light (VIS) to near infrared light (NIR), and shows remarkable potential in practical application. According to the invention, ultra-wide spectrum emission from 400 nm to 1400 nm is realized in Mo < 4 + >-Te < 4 + > co-doped Cs2SnCl6, and the photoluminescence quantum yield of 95.3% is achieved, the excellent performance is realized through efficient energy transfer from Te < 4 + > to Mo < 4 + > and passivation synergistic effect of vacancy defects, and the performance can be verified through theoretical calculation and spectral research; finally, the ultra-wideband fluorescent powder conversion LED based on the Mo < 4 + > and Te < 4 + > co-doped Cs2SnCl6 is successfully prepared and is applied to the fields of blood gas analysis and night vision imaging.

A lighting device (10) is provided. The lighting device (10) comprises: a light emitting element (11), and a translucent envelope (20) enclosing the light emitting element (11) and having a surface area at least three times bigger than the light emitting area of the light emitting element (11), wherein the envelope (20) is coated with a layer (22) of phosphor with a thickness of 0.05-1.0 mm and the layer (22) of phosphor is configured to block less than 30% of the visible light emitted by the light emitting element (11).

The invention relates to a red fluorescent material excited by blue light, an LED device and fluorescent ceramic. The chemical formula of the red fluorescent material is La (2-x) MgNbO6.5: xEu < 3 + >, wherein x is more than or equal to 0.01 and less than or equal to 0.1. The preparation method comprises the following steps: weighing lanthanum oxide, magnesium oxide, niobium oxide and europium oxide raw materials according to a stoichiometric ratio, grinding and uniformly mixing; sintering the uniformly mixed powder in a muffle furnace at high temperature, and cooling to room temperature to obtain the red fluorescent material. Compared with the prior art, the novel oxide-based red fluorescent powder prepared by the invention can emit positive red light of which the central wavelength is 616nm under the excitation of 465nm blue light, and can be used for white light LED (Light Emitting Diode) luminescent devices and fluorescent ceramics.

The invention provides a packaging method for a double-color-temperature COB light source, and relates to the technical field of LED light source packaging. The packaging method of the double-color-temperature COB light source comprises the following steps of (1) substrate pretreatment, (2) chip die bonding, (3) lead bonding, (4) fluorescent powder layer preparation, (5) packaging glue filling and (6) curing treatment. The substrate is subjected to special pretreatment, so that the adhesive force between the substrate and the packaging material is improved, and the reliability of the light source is enhanced. Through high-precision chip die bonding and an optimized lead bonding process, the chip position precision and the electrical connection reliability are ensured, and the optical performance consistency of the light source is improved. Through precise fluorescent powder proportion regulation and control and an ink-jet printing coating technology, precise regulation and control of double color temperatures are achieved, and the lighting requirements of different scenes are met. Through precise fluorescent powder proportion regulation and control and an ink-jet printing coating technology, precise regulation and control of double color temperatures are achieved, and the lighting requirements of different scenes are met.

The invention discloses an oil-immersed transformer pressure-maintaining sealing detection device, and relates to the technical field of detection devices, the oil-immersed transformer pressure-maintaining sealing detection device comprises a transformer body, the outer surface of the transformer body is provided with an oil storage tank, and the outer surface of the transformer body is provided with a preliminary survey assembly used for preliminarily detecting whether the inner wall of the oil storage tank is slightly damaged. According to the pressure-maintaining sealing detection device for the oil-immersed transformer, when the infrared measuring instrument detects that a suspicious gap exists in the outer wall of the oil storage tank, the negative pressure bin can be inserted into the oil storage tank and rotated in all directions to directly face the suspicious small gap in the inner wall of the oil storage tank, and the negative pressure bin is moved to be tightly attached to the inner wall of the oil storage tank; the oil dirt at the position is cleaned up in a heating and negative pressure mode, then mixed gas of helium and fluorescent powder is conveyed into the sealed space, and the fluorescent powder can be driven by the helium to penetrate through the inner wall of the oil storage tank along the tiny gaps to be attached to the outer surface of the oil storage tank.

A continuous-wave perovskite polariton laser device, including an optical microcavity, a spacer layer, and a gain medium. The gain medium is a perovskite material or a composite material containing perovskite, in a form of thin film, microcrystal, phosphor, nanocrystal, quantum dot, or single crystal. The perovskite gain medium is prepared by solution process or vacuum deposition technique, and is combined with an optical resonator. By exploiting the strong interaction between excitons and photons, a steady-state exciton-polariton condensation is formed, enabling the generation of continuous-wave polariton laser emission with a low threshold. The laser device can achieve low-threshold continuous-wave or pulsed lasing emission at room temperature under various light sources pumping or electrical excitation. Its threshold is 1 to 3 orders of magnitude lower than that of conventional semiconductor lasers, with an optimized threshold as low as 0.1 to 1 W / cm2, representing a novel ultralow-power coherent light source technology.

The invention belongs to the technical field of nano fluorescent powder, and particularly relates to Ca10 (PO4) 6 (OH) 2: RE < 3 + > nano fluorescent powder as well as a preparation method and application thereof. The preparation method comprises the following steps: mixing Ca (NO3) 2 and RE (NO3) 3 solutions in proportion to prepare a cation solution, dropwise adding a certain amount of H3PO4 to prepare a mixed solution, adjusting the pH value by using a charge compensation agent, uniformly stirring, performing ultrasonic dispersion, performing hydrothermal reaction on the obtained solution, and purifying to obtain the final product Ca10 (PO4) 6 (OH) 2: RE < 3 + > nano fluorescent powder. The charge compensation agent is at least one of KOH and LiOH. By utilizing the methods, the invention provides the Ca10 (PO4) 6 (OH) 2: RE3 + nano fluorescent powder taking K < + > / Li < + > as the charge compensation agent, and the Ca10 (PO4) 6 (OH) 2: RE3 + nano fluorescent powder has the advantages of thermal stability, color stability and high luminescence, and is suitable for temperature sensing, cheilogramma and anti-counterfeiting detection.

To provide a light-emitting device having a sharp peak in a wavelength range with a peak wavelength therebetween.SOLUTION: A light-emitting device includes: a plurality of solid-state light sources that emit light having a different peak wavelength from each other and are mounted on a substrate having a wiring pattern; and a phosphor having a fluorescent material, disposed in a traveling direction of the light emitted from the plurality of solid-state light sources and capable of transmitting the light emitted from the plurality of solid-state light sources. A first solid-state light source of the plurality of solid-state light sources is a light source having a peak wavelength in a range of 280 nm or less, and a second solid-state light source different from the first solid-state light source of the plurality of solid-state light sources is a light source having a peak wavelength between 420 nm and 470 nm.SELECTED DRAWING: Figure 1

A method for producing a plurality of radiation-emitting components is specified, comprising the steps: - Providing a component assembly with a plurality of radiation-emitting semiconductor chips, each having a main emission surface, - Arranging a conversion layer containing a phosphor on a main emission surface, - Area-by-area application and / or introduction of particles onto the surfaces of the conversion layers. A radiation-emitting component is also specified.

The present application discloses a white phosphorescent perovskite green fluorescent powder with high quantum efficiency and anti-thermal quenching of luminescence and a preparation method thereof. The chemical general formula is: M9Tb(PO4)7, where M is any one of Ca, Sr, Ba, and Mg; the fluorescent powder is synthesized by a high-temperature solid-phase method. The M9Tb(PO4)7 fluorescent powder exhibits the characteristics of anti-thermal quenching and high luminescence efficiency. At 200 °C, it can still maintain 125% of the emission intensity at room temperature (25 °C), effectively solving the problem of poor thermal stability existing in the prior art, and at the same time solving the problem of low luminescence efficiency caused by low doping concentration of Tb 3+ ​

An inventive luminescent material suitable for use as a phosphor for an LED includes a nitridophosphate material having a general formula AEy-xLi10-2yP4N10:Eux, wherein (i) AE includes one or more of Ca, Sr, or Ba, and (ii) y≥x>0. In some instances, y can equal 2 and x can be between 0 and 0.1. In some instances, AE can include only Ca; in some other instances, AE can include a majority amount of Ca and lesser amounts of Sr or Ba. In some instances, the luminescent material can exhibit a peak emission wavelength greater than 600 nm.

A device includes a LED die having a peak emission at a blue or shorter wavelength, a LED die having a peak emission at a red, orange, yellow, green, or cyan wavelength, and a homogenous light conversion material positioned to receive light emitted from the LED dies. The light conversion material including: (i) a first phosphor compound having a peak emission at a green wavelength; (ii) a second phosphor compound having a peak emission at an orange wavelength; and (iii) a third phosphor compound having a peak emission at a red, orange, yellow, green, or cyan wavelength. The device is a packaged LED device and a relative concentration of the phosphor compounds and a relative luminosity of the LED dies are selected so the device emits white light satisfying a preference P1 and a fidelity F3 according to a TM-30 standard for color rendering.

The invention belongs to the technical field of laser diode illumination and display, and particularly relates to a laser white light device for laser display and illumination and a preparation method thereof. Comprising a laser emission module and a fluorescence conversion module. The fluorescence conversion module comprises a pixelated transparent substrate, a green fluorescent powder unit and a red fluorescent powder unit; groove array structures which are arranged in a staggered mode are distributed on the upper side and the lower side of the pixelated transparent substrate respectively. The green fluorescent powder unit is arranged in the lower side groove array structure, and the red fluorescent powder unit is arranged in the upper side groove array structure; the laser emitting module emits laser from the lower portion of the pixelated transparent substrate to the upper portion, and the green fluorescent powder unit and the red fluorescent powder unit are excited to emit green light and red light respectively and then are fused to form white light. According to the invention, the heat dissipation performance of the fluorescence conversion module is improved, the reabsorption between red and green fluorescent powder is weakened, the luminous efficiency is improved, and a white light LD device with high brightness and high color rendering can be realized.

The invention relates to an ultraviolet / purple light excited blue fluorescent material as well as a preparation method and application thereof. The Eu < 2 + > doped oxide-based blue fluorescent material has a chemical expression of BaHfSi2O7: xEu < 2 + >, and x is more than or equal to 0.003 and less than or equal to 0.02. Compared with the prior art, the purple-light-excited blue fluorescent material provided by the invention is brand-new and unreported ultraviolet-excited Eu < 2 + >-doped oxide-based 472nm blue-light-emitting fluorescent powder, the fluorescent powder has a wide excitation band, the excitation spectrum range covers 200-450nm, the emission spectrum range covers 390-680nm, and the fluorescent material has a good fluorescent effect under the excitation of 304nm near ultraviolet light. The blue light with the central wavelength of 472nm is emitted, and meanwhile, the blue light emitting material has excellent stability and luminous efficiency. The fluorescent powder can be prepared by adopting a conventional solid-phase reaction method, has the characteristics of simple preparation process and facilitation of industrial production, can be combined with a near ultraviolet chip to generate white light, can be used as a good candidate material for wide application of a white light LED, and can meet the urgent demand of a current healthy illumination LED light source.

The laser lighting module comprises a laser diode, a first collimating lens, a multi-face reflector, a fluorescent powder piece, a second collimating lens and a reflector array which are sequentially arranged along a light path, a plurality of reflecting faces are arranged on the side, corresponding to the fluorescent powder piece, of the multi-face reflector, and a light through hole is formed in the middle of the multi-face reflector. A laser beam emitted by the laser diode sequentially passes through the first collimating lens and the light through hole and then is projected to the fluorescent powder piece, and light excited by the fluorescent powder piece is reflected by the multi-face reflector, sequentially passes through the second collimating lens and the reflector array and then is emitted. Through the arrangement of the reflective fluorescent powder sheet and the multi-surface reflector comprising a plurality of reflecting surfaces, when a laser beam is projected onto the fluorescent powder sheet, generated white light is converged on the second collimating lens after being reflected by the plurality of reflecting surfaces, and is emitted to the reflector array to be projected out after being collimated by the second collimating lens; by adopting the reflective fluorescent powder sheet, the power of the laser diode can be improved, and the brightness and the spatial distribution uniformity of emergent light are improved.

Disclosed are a light emitting device and a method for manufacturing a light emitting device. The light emitting device according to the present application may be formed by an epitaxial growth process. In addition, the light emitting device according to the present application includes a first semiconductor layer, a light emitting layer and a second semiconductor layer. Light emitting wavelengths of the first region, the second region and the third region are different by setting composition of the light emitting layer of the top walls of the plurality of protrusions, the side walls of the plurality of protrusions and the recessed region between the plurality of protrusions to be different, therefore, the light-emitting device may emit light of different wavelengths without using phosphors or quantum dots for wavelength conversion, thereby prolonging the lifespan of the light-emitting device and improving the reliability of the light-emitting device.

A light emitting device comprising: a dual-wavelength Light Emitting Diode (LED) chip; and a manganese-activated fluoride phosphor comprising at least one of: K2SiF6:Mn4+, K2TiF6:Mn4+ and K2GeF6:Mn4+ for generating light with a peak emission wavelength from 620 nm to 660 nm; and wherein the dual-wavelength LED chip comprises a first p-n junction diode comprising a first Multiple Quantum Well structure for generating a blue light with a full width at half maximum emission intensity from 15 nm to 25 nm and a second p-n junction diode comprising a second Multiple Quantum Well structure for generating a green light with a full width at half maximum emission intensity from 15 nm to 45 nm.

The invention discloses a diamond array type microporous heat dissipation substrate adaptive to multi-granularity fluorescent powder and a design method of the diamond array type microporous heat dissipation substrate. According to the invention, the diamond array micropore design is adaptive to fluorescent powder with different particle sizes, the maximum luminous efficiency is realized through optimization under specific incident power, and the method is a multi-dimensional, multi-physical field and refined coupling optimization process. The ultra-high thermal conductivity of diamond is used as a framework, and the aperture, depth, shape, connecting rib width, array mode and even inner wall surface of a micropore are precisely designed and optimized in a regional, self-adaptive and nanoscale manner, so that fluorescent powder of each particle size can be ensured to be in a'exclusive 'micropore environment; and optimal thermal management and light extraction conditions are obtained, so that the maximum light energy is released under the given excitation power.

The invention relates to a blue-green dual-band light-emitting diode epitaxial wafer which comprises a substrate, a buffer layer, an N-type semiconductor layer, a low-temperature stress release layer, a multi-quantum well light-emitting layer, an electron blocking layer and a P-type semiconductor layer which are sequentially stacked in the epitaxial direction. The multi-quantum light-emitting layer comprises a first blue light InGaN layer, a first blue light barrier layer, a first green light barrier layer, a first green light InGaN layer, a second green light barrier layer, a second blue light InGaN layer and a second blue light barrier layer which are sequentially, periodically and alternately grown in the epitaxial direction. The first green light barrier layer comprises a pre-well low-energy-level barrier layer, a pre-well high-energy-level barrier layer and a pre-well polarization compensation barrier layer which are sequentially grown along the epitaxial direction; the second green light barrier layer comprises a post-well polarization compensation barrier layer, a post-well high-energy-level barrier layer and a post-well low-energy-level barrier layer which are sequentially grown along the epitaxial direction; the preparation cost of the backlight source can be effectively reduced, the use of fluorescent powder is reduced, the luminous efficiency is high, and the color rendering performance is good.

A method for manufacturing a radiation-emitting component (100) is specified, comprising the following process steps: - Providing at least one semiconductor chip (10) which, during operation, emits electromagnetic radiation of a first wavelength range from a radiation emission surface (11), - Manufacturing a conversion element (20) on the radiation emission surface (11), wherein manufacturing the conversion element (20) comprises the process steps: - Applying a partially cured matrix material (21) in which phosphor particles are embedded that convert electromagnetic radiation of the first wavelength range into electromagnetic radiation of a second wavelength range, to a surface, - Compacting the partially hardened matrix material (21) to produce a compact layer (22), - Complete hardening of the compact layer (22), wherein the surface is the radiation emission surface (11) of the semiconductor chip (10) or an auxiliary substrate from which the compact layer (22) is transferred to the radiation emission surface (11) before complete curing. A radiation-emitting device (100) is further specified.

This invention belongs to the field of luminescent materials technology, and discloses a green phosphor, its preparation method, and its application. The green phosphor has the chemical formula CaY. 1‑x GaO4:xCe 3+ Wherein, 0.02 ≤ x ≤ 0.2. The green phosphor of this invention, due to its specific composition, can be used not only in non-contact optical temperature measurement but also in indoor lighting. When applied to optical temperature measurement, it offers advantages such as rapid response, high resolution, high sensitivity, high temperature resistance, and no need for direct contact with objects. Furthermore, when mixed with blue LED chips and commercially available red phosphor, it can be used as a warm white LED device, which features low cost, stable performance, and good luminous effect.

A phosphor (1) is specified with the general formula EA4-xa-dSEx+aM1-b-cSi19-yx-3cAly+x+3cN29-y+a-3b-2dOy-a+3b+2d:A, where - EA is selected from Ca, Sr, Ba, Zn or combinations thereof, - SE is selected from the group of trivalent rare earth elements or combinations thereof, - M is selected from Sc, Y, Lu, Tm, Er, Ho or combinations thereof, - A is selected from Ce, Eu, Mn, Bi, Tb, Dy, Ni, Cr, Er or combinations thereof, - 0≤d≤1; - 0≤x+a+d≤4; - 0≤b+c<1; - 0≤y+x+3c≤19; - 0≤y-a+3b+2d ≤10; and- 2* (4-xad) + 3*(x+a) + 3* (1-bc)+ 4* (19-yx-3c) + 3* (y+x+3c)-3* (29-y+a-3b-2d)-2* (y-a+3b+2d) = 0.Furthermore, an optoelectronic component (10) and a method for producing a phosphor (1) are specified.

The present invention provides an antimony-based organic-inorganic hybrid metal halide luminescent material and a preparation method thereof, which is applicable to the photoelectric field. The present invention uses 2-methylpiperazine as an organic ligand to synthesize a luminescent material with the chemical formula (C5H 14 N2)SbCl5 luminescent material, where C5H 14 N2 represents the cationic form of 2-methylpiperazine. The excitation wavelength range of this material is 250 to 400 nanometers, while its emission wavelength covers 450 to 850 nanometers, with the main emission peak at approximately 600 to 650 nanometers. The preparation method of the present invention is characterized by a simple process, low cost, and suitability for large-scale production. In addition, the luminescent material exhibits wide excitation and emission bandwidths and has high luminous efficiency. It can be widely used in the manufacture of light-emitting devices, as well as in applications such as phosphors, spectrum conversion, and display lighting.

The utility model relates to the technical field of fluorescent powder thermal stability testing, and discloses a fluorescent powder thermal stability testing device. The device comprises an installation box and further comprises a detector fixedly installed on one side of the top of the installation box, three sets of detection heads are fixedly connected to the bottom of the detector, three sets of second partition plates are fixedly connected to the interior of the installation box, a set of detection heads are arranged in each second partition plate, and a coating plate is clamped in the installation box in a sliding mode. A conveying mechanism is arranged in the mounting box; according to the fluorescent powder coating device, the arranged material storage box is matched with the material guide pipe to convey fluorescent powder into the brush, then the brush is matched with the material conveying mechanism to drive the coating plate to advance, meanwhile, various fluorescent powder is evenly coated through the brush, the different fluorescent powder is isolated through the first partition plate, and then various fluorescent powder coating is achieved; brushing is more uniform, detection errors of equipment are reduced, and meanwhile the detection efficiency of the equipment is improved.

In an X-ray photoelectron spectrum obtained using Al-Kα radiation as an excitation X-ray source, this β-sialon phosphor satisfies the relationship 2.5>Y / X, where X is the photoelectron intensity at a binding energy of 103.5 eV and Y is the photoelectron intensity at a binding energy of 102.0 eV.

This invention discloses a surface-mount LED chip with near-infrared spectrum, belonging to the field of semiconductor light-emitting device technology, specifically a ceramic substrate. The ceramic substrate has a soldering mounting area where a near-infrared chip is soldered. A spectral optimization structure is disposed on top of the soldering mounting area. A transparent encapsulating layer is disposed on top of the near-infrared chip, and near-infrared transmissive phosphor is disposed within the transparent encapsulating layer. A heat dissipation component is disposed on the outside of the ceramic substrate. This invention, by setting a spectral optimization structure and placing phosphor within the transparent encapsulating layer, can significantly improve the purity of the near-infrared spectrum. Combined with a silicone convex lens and anti-reflection film on the outside of the diffuser, it can further improve the light extraction efficiency of the near-infrared chip, thus effectively improving the efficiency of the near-infrared chip's divergent spectrum.