566 results about "Storage phosphor" patented technology

The invention provides an LED packaging device and a preparation method and application thereof, and relates to the technical field of semiconductor devices.The preparation method comprises the steps that packaging silica gel and fluorescent powder are mixed according to a preset proportion, and then a film with the preset thickness is prepared through a film scraping machine; curing the membrane at a first preset temperature for a first preset time, and completing primary curing to obtain a semi-cured fluorescent sheet; transferring the semi-cured fluorescent sheet to the flip LED chip which is subjected to die bonding in the bracket, and carrying out vacuum pressure sinking, so that the semi-cured fluorescent sheet is completely attached to the surface and the side surface of the flip LED chip; curing the semi-cured fluorescent sheet subjected to vacuum pressure sinking at a second preset temperature for a second preset time, and completing secondary curing to obtain a cured finished product; according to the LED packaging device and the manufacturing method thereof, the technical problems that in the prior art, the stability of the dispensing glue amount of the LED packaging device is poor, fluorescent powder is not evenly distributed, and consequently the brightness and the concentration degree are reduced can be solved.

A lighting device (10) is provided. The lighting device (10) comprises: a light emitting element (11), and a translucent envelope (20) enclosing the light emitting element (11) and having a surface area at least three times bigger than the light emitting area of the light emitting element (11), wherein the envelope (20) is coated with a layer (22) of phosphor with a thickness of 0.05-1.0 mm and the layer (22) of phosphor is configured to block less than 30% of the visible light emitted by the light emitting element (11).

The invention provides a packaging method for a double-color-temperature COB light source, and relates to the technical field of LED light source packaging. The packaging method of the double-color-temperature COB light source comprises the following steps of (1) substrate pretreatment, (2) chip die bonding, (3) lead bonding, (4) fluorescent powder layer preparation, (5) packaging glue filling and (6) curing treatment. The substrate is subjected to special pretreatment, so that the adhesive force between the substrate and the packaging material is improved, and the reliability of the light source is enhanced. Through high-precision chip die bonding and an optimized lead bonding process, the chip position precision and the electrical connection reliability are ensured, and the optical performance consistency of the light source is improved. Through precise fluorescent powder proportion regulation and control and an ink-jet printing coating technology, precise regulation and control of double color temperatures are achieved, and the lighting requirements of different scenes are met. Through precise fluorescent powder proportion regulation and control and an ink-jet printing coating technology, precise regulation and control of double color temperatures are achieved, and the lighting requirements of different scenes are met.

A continuous-wave perovskite polariton laser device, including an optical microcavity, a spacer layer, and a gain medium. The gain medium is a perovskite material or a composite material containing perovskite, in a form of thin film, microcrystal, phosphor, nanocrystal, quantum dot, or single crystal. The perovskite gain medium is prepared by solution process or vacuum deposition technique, and is combined with an optical resonator. By exploiting the strong interaction between excitons and photons, a steady-state exciton-polariton condensation is formed, enabling the generation of continuous-wave polariton laser emission with a low threshold. The laser device can achieve low-threshold continuous-wave or pulsed lasing emission at room temperature under various light sources pumping or electrical excitation. Its threshold is 1 to 3 orders of magnitude lower than that of conventional semiconductor lasers, with an optimized threshold as low as 0.1 to 1 W / cm2, representing a novel ultralow-power coherent light source technology.

The invention belongs to the technical field of nano fluorescent powder, and particularly relates to Ca10 (PO4) 6 (OH) 2: RE < 3 + > nano fluorescent powder as well as a preparation method and application thereof. The preparation method comprises the following steps: mixing Ca (NO3) 2 and RE (NO3) 3 solutions in proportion to prepare a cation solution, dropwise adding a certain amount of H3PO4 to prepare a mixed solution, adjusting the pH value by using a charge compensation agent, uniformly stirring, performing ultrasonic dispersion, performing hydrothermal reaction on the obtained solution, and purifying to obtain the final product Ca10 (PO4) 6 (OH) 2: RE < 3 + > nano fluorescent powder. The charge compensation agent is at least one of KOH and LiOH. By utilizing the methods, the invention provides the Ca10 (PO4) 6 (OH) 2: RE3 + nano fluorescent powder taking K < + > / Li < + > as the charge compensation agent, and the Ca10 (PO4) 6 (OH) 2: RE3 + nano fluorescent powder has the advantages of thermal stability, color stability and high luminescence, and is suitable for temperature sensing, cheilogramma and anti-counterfeiting detection.

To provide a light-emitting device having a sharp peak in a wavelength range with a peak wavelength therebetween.SOLUTION: A light-emitting device includes: a plurality of solid-state light sources that emit light having a different peak wavelength from each other and are mounted on a substrate having a wiring pattern; and a phosphor having a fluorescent material, disposed in a traveling direction of the light emitted from the plurality of solid-state light sources and capable of transmitting the light emitted from the plurality of solid-state light sources. A first solid-state light source of the plurality of solid-state light sources is a light source having a peak wavelength in a range of 280 nm or less, and a second solid-state light source different from the first solid-state light source of the plurality of solid-state light sources is a light source having a peak wavelength between 420 nm and 470 nm.SELECTED DRAWING: Figure 1

A method for producing a plurality of radiation-emitting components is specified, comprising the steps: - Providing a component assembly with a plurality of radiation-emitting semiconductor chips, each having a main emission surface, - Arranging a conversion layer containing a phosphor on a main emission surface, - Area-by-area application and / or introduction of particles onto the surfaces of the conversion layers. A radiation-emitting component is also specified.

A device includes a LED die having a peak emission at a blue or shorter wavelength, a LED die having a peak emission at a red, orange, yellow, green, or cyan wavelength, and a homogenous light conversion material positioned to receive light emitted from the LED dies. The light conversion material including: (i) a first phosphor compound having a peak emission at a green wavelength; (ii) a second phosphor compound having a peak emission at an orange wavelength; and (iii) a third phosphor compound having a peak emission at a red, orange, yellow, green, or cyan wavelength. The device is a packaged LED device and a relative concentration of the phosphor compounds and a relative luminosity of the LED dies are selected so the device emits white light satisfying a preference P1 and a fidelity F3 according to a TM-30 standard for color rendering.

Disclosed are a light emitting device and a method for manufacturing a light emitting device. The light emitting device according to the present application may be formed by an epitaxial growth process. In addition, the light emitting device according to the present application includes a first semiconductor layer, a light emitting layer and a second semiconductor layer. Light emitting wavelengths of the first region, the second region and the third region are different by setting composition of the light emitting layer of the top walls of the plurality of protrusions, the side walls of the plurality of protrusions and the recessed region between the plurality of protrusions to be different, therefore, the light-emitting device may emit light of different wavelengths without using phosphors or quantum dots for wavelength conversion, thereby prolonging the lifespan of the light-emitting device and improving the reliability of the light-emitting device.

The invention discloses a diamond array type microporous heat dissipation substrate adaptive to multi-granularity fluorescent powder and a design method of the diamond array type microporous heat dissipation substrate. According to the invention, the diamond array micropore design is adaptive to fluorescent powder with different particle sizes, the maximum luminous efficiency is realized through optimization under specific incident power, and the method is a multi-dimensional, multi-physical field and refined coupling optimization process. The ultra-high thermal conductivity of diamond is used as a framework, and the aperture, depth, shape, connecting rib width, array mode and even inner wall surface of a micropore are precisely designed and optimized in a regional, self-adaptive and nanoscale manner, so that fluorescent powder of each particle size can be ensured to be in a'exclusive 'micropore environment; and optimal thermal management and light extraction conditions are obtained, so that the maximum light energy is released under the given excitation power.

The invention relates to a blue-green dual-band light-emitting diode epitaxial wafer which comprises a substrate, a buffer layer, an N-type semiconductor layer, a low-temperature stress release layer, a multi-quantum well light-emitting layer, an electron blocking layer and a P-type semiconductor layer which are sequentially stacked in the epitaxial direction. The multi-quantum light-emitting layer comprises a first blue light InGaN layer, a first blue light barrier layer, a first green light barrier layer, a first green light InGaN layer, a second green light barrier layer, a second blue light InGaN layer and a second blue light barrier layer which are sequentially, periodically and alternately grown in the epitaxial direction. The first green light barrier layer comprises a pre-well low-energy-level barrier layer, a pre-well high-energy-level barrier layer and a pre-well polarization compensation barrier layer which are sequentially grown along the epitaxial direction; the second green light barrier layer comprises a post-well polarization compensation barrier layer, a post-well high-energy-level barrier layer and a post-well low-energy-level barrier layer which are sequentially grown along the epitaxial direction; the preparation cost of the backlight source can be effectively reduced, the use of fluorescent powder is reduced, the luminous efficiency is high, and the color rendering performance is good.

A method for manufacturing a radiation-emitting component (100) is specified, comprising the following process steps: - Providing at least one semiconductor chip (10) which, during operation, emits electromagnetic radiation of a first wavelength range from a radiation emission surface (11), - Manufacturing a conversion element (20) on the radiation emission surface (11), wherein manufacturing the conversion element (20) comprises the process steps: - Applying a partially cured matrix material (21) in which phosphor particles are embedded that convert electromagnetic radiation of the first wavelength range into electromagnetic radiation of a second wavelength range, to a surface, - Compacting the partially hardened matrix material (21) to produce a compact layer (22), - Complete hardening of the compact layer (22), wherein the surface is the radiation emission surface (11) of the semiconductor chip (10) or an auxiliary substrate from which the compact layer (22) is transferred to the radiation emission surface (11) before complete curing. A radiation-emitting device (100) is further specified.

This invention belongs to the field of luminescent materials technology, and discloses a green phosphor, its preparation method, and its application. The green phosphor has the chemical formula CaY. 1‑x GaO4:xCe 3+ Wherein, 0.02 ≤ x ≤ 0.2. The green phosphor of this invention, due to its specific composition, can be used not only in non-contact optical temperature measurement but also in indoor lighting. When applied to optical temperature measurement, it offers advantages such as rapid response, high resolution, high sensitivity, high temperature resistance, and no need for direct contact with objects. Furthermore, when mixed with blue LED chips and commercially available red phosphor, it can be used as a warm white LED device, which features low cost, stable performance, and good luminous effect.

The present invention provides an antimony-based organic-inorganic hybrid metal halide luminescent material and a preparation method thereof, which is applicable to the photoelectric field. The present invention uses 2-methylpiperazine as an organic ligand to synthesize a luminescent material with the chemical formula (C5H 14 N2)SbCl5 luminescent material, where C5H 14 N2 represents the cationic form of 2-methylpiperazine. The excitation wavelength range of this material is 250 to 400 nanometers, while its emission wavelength covers 450 to 850 nanometers, with the main emission peak at approximately 600 to 650 nanometers. The preparation method of the present invention is characterized by a simple process, low cost, and suitability for large-scale production. In addition, the luminescent material exhibits wide excitation and emission bandwidths and has high luminous efficiency. It can be widely used in the manufacture of light-emitting devices, as well as in applications such as phosphors, spectrum conversion, and display lighting.

In an X-ray photoelectron spectrum obtained using Al-Kα radiation as an excitation X-ray source, this β-sialon phosphor satisfies the relationship 2.5>Y / X, where X is the photoelectron intensity at a binding energy of 103.5 eV and Y is the photoelectron intensity at a binding energy of 102.0 eV.

This invention discloses a surface-mount LED chip with near-infrared spectrum, belonging to the field of semiconductor light-emitting device technology, specifically a ceramic substrate. The ceramic substrate has a soldering mounting area where a near-infrared chip is soldered. A spectral optimization structure is disposed on top of the soldering mounting area. A transparent encapsulating layer is disposed on top of the near-infrared chip, and near-infrared transmissive phosphor is disposed within the transparent encapsulating layer. A heat dissipation component is disposed on the outside of the ceramic substrate. This invention, by setting a spectral optimization structure and placing phosphor within the transparent encapsulating layer, can significantly improve the purity of the near-infrared spectrum. Combined with a silicone convex lens and anti-reflection film on the outside of the diffuser, it can further improve the light extraction efficiency of the near-infrared chip, thus effectively improving the efficiency of the near-infrared chip's divergent spectrum.

To provide a phosphor emitting green light with higher emission intensity.SOLUTION: A phosphor includes a first oxide containing Rb, Na, Li, Eu and Si in its composition. The first oxide has a composition in which a molar ratio of Rb to Si is 0.5 or more and less than 1, that of Na to Si is more than 0 and less than 0.5, that of Li to Si is more than 2 and less than 3.5, and that of a sum total content of Na and Li to Rb is 3 or more and 7 or less. In an X-ray diffraction pattern using a CuKα ray, the phosphor has a first diffraction peak in a Bragg angle range of 15.5° or more and 16.5° or less and a second diffraction peak in a Bragg angle range of 11.0° or more and 12.0° or less. When an intensity ratio of the second diffraction peak to the first diffraction peak is set to be α, α is in a range of 0.6 or more and 1.6 or less.SELECTED DRAWING: Figure 2

According to an embodiment of the present disclosure, a display device may comprise a liquid crystal display panel; a backlight configured to output a light to the liquid crystal display panel, wherein the backlight includes a plurality of backlight blocks and a light source driving circuit configured to generate a light source driving signal for controlling a light output of the backlight block, each backlight block has one or more LEDs (Light Emitting Diodes); and each LED is formed of KSF (Potassium fluorosilicate) phosphor; and a controller configured to: obtain a global dimming value and a local dimming value, determine a duty of the light source driving signal as the local dimming value if the global dimming value is less than a certain value, and reduce a constant current applied to the backlight block based on the global dimming value.

A light emitting diode (LED) module is provided. The LED module includes: a substrate including upper pads; a passivation layer on the substrate and defining openings exposing the upper pads; an LED chip on the passivation layer and including electrode pads electrically connected to the upper pads of the substrate; an adhesive layer on the LED chip and extending along a side surface of the LED chip; and a phosphor film covering an external surface of the adhesive layer and including an end portion around the LED chip.

Light-emitting device assembly (100; 102) comprising: a substrate (120; 220); a plurality of light-emitting device chips (110; 210) arranged linearly and spatially separated from one another on the substrate (120; 220); and a plurality of wavelength conversion units (130; 230) on surfaces of the plurality of light-emitting device chips (110; 210), wherein the plurality of wavelength conversion units (130; 230) each have regions extending over regions between the plurality of light-emitting device chips (110; 210), wherein each of the plurality of wavelength conversion units (110; 210) has: a longer side extending in a first direction in which the light-emitting device chips (110; 210) are arranged;and a shorter side that is shorter than the longer side, wherein shorter sides of wavelength conversion units adjacent in the first direction of the plurality of wavelength conversion units (110; 210) are spaced apart from each other, wherein side faces of the shorter sides are exposed, wherein each of the plurality of wavelength conversion units (130; 230) has several phosphor layers (131, 132, 133; 134, 135; 231, 232, 233; 234, 235), and wherein the phosphor layers (131, 132, 133; 134, 135; 231, 232, 233; 234, 235) are stacked sequentially according to the lengths of wavelengths such that a light-emitting phosphor layer with a shorter wavelength is located at one bottom and a Light-emitting phosphor layers with a longer wavelength are arranged on a surface.

A wavelength conversion module includes: a phosphor member; and a light-transmissive substrate that is directly bonded to the phosphor member, wherein a higher thermal conductivity of the light-transmissive substrate is higher than a thermal conductivity of the phosphor member, and the light-transmissive substrate has a thickness in a range from 100 μm to 600 μm.

The invention discloses blue-green fluorescent powder, a fluorescent coating and a preparation method and application thereof. The preparation method of the blue-green fluorescent powder comprises the following steps: 1) providing raw material powder according to the chemical composition of the blue-green fluorescent powder, and mixing the raw material powder with a fluxing agent to obtain mixed powder; wherein the chemical composition of the blue-green fluorescent powder is SrAl2O4: Eu < 2 + >, Dy < 3 + >; the raw material of aluminum is alpha-type nano aluminum oxide; the weight of the fluxing agent is 1-5wt% of the weight of the raw material powder; 2) carrying out primary sintering on the mixed powder in a reducing atmosphere at 1000-1500 DEG C to obtain primary sintered powder; crushing and grinding the primary sintered powder, and then carrying out secondary sintering in a reducing atmosphere at 800-1400 DEG C to obtain secondary sintered powder; and (3) carrying out ball milling on the secondarily sintered powder for 0.5-10 hours to obtain the blue-green fluorescent powder. The blue-green fluorescent powder disclosed by the invention has relatively high initial afterglow intensity.

A light generator (1) comprising: - an optoelectronic device (11) configured to produce a first monochromatic beam (R1) so as to generate light (L1) at a first wavelength (λ1), - a phosphor layer (12) offset from said optoelectronic device (11) and configured to convert all or part of the first monochromatic beam (R1) into a second beam (R2) so as to obtain converted light (L2) at one or more second, higher wavelengths (λ2) and to diffuse it, characterized in that it comprises: - a first dichroic filter (13) configured to transmit the light (L1) emanating from the first monochromatic beam (R1) towards the phosphor layer (12) and to reflect the converted light (L2) by the phosphor layer (12), - a protective layer (15) disposed opposite the phosphor layer (12) on the side opposite the first filter Dichroic (13). Figure for the abstract: figure 1

The invention provides a sky-green light source LED packaging device, and belongs to the technical field of luminescent materials. The azure light source LED packaging device comprises a light-emitting substrate, wherein the light-emitting substrate comprises fluorescent powder; the fluorescent powder comprises blue-green fluorescent powder and green fluorescent powder; the light-emitting peak wavelength of the blue-green fluorescent powder is 490-500 nm, the molecular formula of the blue-green fluorescent powder is (Ba1-x-ySrxEuy) Si2N2O2, and x is greater than or equal to 0.001 and less than or equal to 0.3; 0.001 < = y < = 0.1; the blue-green fluorescent powder is of an orthogonal structure and is crystallized in a space group Pcca. According to the invention, on the basis of realizing azure luminescence, the luminescence performance of the azure luminescence is improved, especially the luminescence intensity of the azure luminescence is improved, and the anti-aging performance of the azure light source LED packaging device is also improved.

A light emitting diode (LED) structure that includes a stent substrate; and a circuit having a plurality of contact pads arranged along a length of the stent substrate. The structure further includes a plurality of light emitting diode (LED) chips, wherein each light emitting diode chip in the plurality of chips is engaged to a set of contact pads along the length of the metal stent substrate. A continuous phosphor layer is present overlying the plurality of light emitting diode (LED) chips, the continuous phosphor layer including first portions that are in direct contact with at least a light transmission surface of the light emitting diode (LED) chips and second portions that bridge across the space separating adjacently positioned light emitting diode. An encapsulant present over the continuous phosphor layer that is covering at least the light emitting diode chips.

A phosphor is disclosed, the phosphor having a host material including an oxide, an activator element having a rare earth element with a first valence, and a rare earth element with a second valence, the second valence being greater than the first valence. Methods of making the phosphor and radiation-emitting components are also disclosed.

To provide a red light-emitting device that emits red light using a blue light-emitting element (blue LED) and a phosphor, and that has dramatically improved brightness.SOLUTION: A light-emitting device that emits red light includes a blue light-emitting element, a first phosphor, and a second phosphor. The light-emitting device has a peak emission wavelength of 615 nm or more and 690 nm or less. When the emission intensity of the light-emitting device at the peak emission wavelength is taken as 100%, the light-emitting device satisfies all of the following: an emission intensity at an emission wavelength of 580 nm is 20% or less, an emission intensity at an emission wavelength of 700 nm is 50% or less, and the maximum emission intensity at emission wavelengths from 400 nm to 500 nm is 5% or less.SELECTED DRAWING: Figure 1

This application discloses a high quantum efficiency near-zero thermal quenching far-red light-emitting plant supplement phosphor and its application. It is prepared by a high-temperature solid-state method and has the composition A2CaBi. 2‑x La x (PO4)2(P2O7):20%Eu 3+ , 0≤ x ≤20%, A = Cs, Li, Na, K, or Rb. This series of phosphors uses Eu as the base. 3+ As the light-emitting center, through La 3+ Effective control of the matrix crystal field to optimize Cs2CaBi 2‑x La x (PO4)2(P2O7) crystal structure, enhancing Eu 3+ Far-red light emission performance.

A color conversion sheet according to an embodiment of the present invention comprises: a base layer; and a wavelength conversion layer that is stacked on at least one surface of the base layer and comprises a matrix resin, an organic phosphor, and a wavelength absorbent, and thus the color conversion sheet experiences low color change, has excellent reliability, and can achieve a color gamut DCI of at least 99.5% by adjusting the phosphor emission wavelength. Also provided is a backlight unit comprising the color conversion sheet.

A wavelength converter material doped with one or more rare earth elements may provide improved temperature sensing precision and / or improved mechanical stability due to reduced structural anisotropy. The converter material may be powder phosphor or ceramic phosphor. The converter material may comprise GdAlO3:Cr in addition to the one or more rare earth elements.