TiO2-ZrO2 composite oxide thin film ultraviolet detector and preparation method thereof

A composite oxide, tio2-zro2 technology, applied in the direction of semiconductor devices, final product manufacturing, sustainable manufacturing/processing, etc., to achieve the effects of improving quality, process compatibility, and reducing surface state density

Inactive Publication Date: 2011-08-24
JILIN UNIV
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0004] But TiO 2 The responsivity of the UV detector needs to be further improved, and the test range also needs to be expanded

Method used

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  • TiO2-ZrO2 composite oxide thin film ultraviolet detector and preparation method thereof
  • TiO2-ZrO2 composite oxide thin film ultraviolet detector and preparation method thereof
  • TiO2-ZrO2 composite oxide thin film ultraviolet detector and preparation method thereof

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Embodiment 1

[0033] Preparation of TiO by Sol-Gel Technology 2 -ZrO 2 Composite oxide sol, respectively add 2.4mL tetrabutyl zirconate and 7.6mL tetrabutyl titanate to 100mL absolute ethanol at room temperature, then add dropwise 10mL glacial acetic acid as a catalyst, after 60 minutes of stirring, a uniform and transparent Slowly add 10mL of acetylacetone to inhibit hydrolysis, the color of the solution becomes darker, continue to stir for 1 hour; finally 10mL of deionized water is slowly added dropwise to the above solution at a rate of 1mL / min, and continue to stir for 2 hours to obtain Uniform and transparent pale yellow sol, it was left to age for 6 hours.

[0034] The aged TiO was spin-coated 2 -ZrO 2 The composite oxide sol was spin-coated on the cleaned quartz substrate, and then dried in an oven at 120 ° C for 10 minutes at a spin-coating speed of 3000 rpm. The above spin-coating and drying process was repeated 5 times, and finally the film was placed on the Sinter in a muffle...

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Abstract

The invention particularly relates to a high-performance ultraviolet photoelectric detector with low surface state density and a preparation method thereof, wherein the detector takes ultrathin quartz as a substrate, takes a TiO2-ZrO2 composite oxide thin film as a matrix, takes Au, Pt or Ni as a metal interdigital electrode and takes Al or Ag as a light reflection layer. The preparation method comprises the following steps: adopting the sol-gel technology for preparing the TiO2-ZrO2 composite oxide thin film with different mixture ratios, and growing a compact nano-thin film on the ultrathin quartz substrate; further processing the thin film via a high-strength ultraviolet cleaning machine; then performing magnetron sputtering, standard photoetching and stripping technology for forming the interdigital electrode in a certain shape; and finally performing evaporation of the reflection layer on the back surface of an ultrathin quartz plate for improving the light absorption efficiency. By adopting the different mixture ratios of the TiO2-ZrO2 composite oxide thin film, the response peak value of the detector can be adjusted within the ultraviolet waveband range from 200nm to 350nm.

Description

technical field [0001] The invention belongs to the technical field of semiconductor optoelectronic devices, and in particular relates to an ultra-thin quartz substrate and nano-TiO 2 -ZrO 2 A high-performance semiconductor ultraviolet photodetector with a low surface state density and a preparation method thereof with a composite oxide thin film as a matrix, Au, Pt or Ni as a metal intercalating electrode, and Al or Ag as a light reflection layer. Background technique [0002] Due to the advantages of small size, high efficiency, low cost, and low power consumption, wide-bandgap semiconductor-based ultraviolet light detectors have important application value in military, civil, aerospace, environmental protection, fire prevention and other fields. One of the research hotspots. [0003] There are many semiconductor materials used in ultraviolet light detectors, and currently they are mainly concentrated in materials such as SiC, ZnO and GaN. But so far, no wide-bandgap se...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/09H01L31/028H01L31/18
CPCY02P70/50
Inventor 刘彩霞阮圣平刘奎学张歆东谢天娇张海峰冯彩慧郭文滨周敬然陈维友
Owner JILIN UNIV
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