Gallium nitride base resonant chamber reinforced ultravivlet photoelectric detector and preparing method

A technology of ultraviolet detectors and detectors, which is applied in circuits, electrical components, semiconductor devices, etc., and can solve problems such as detectors that have not yet been seen

Inactive Publication Date: 2007-07-25
NANJING UNIV
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Problems solved by technology

However, the research on resonant cavity-enhanced ultraviolet photodetectors of GaN-based materials has just started. There are no literature reports on GaN-b

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  • Gallium nitride base resonant chamber reinforced ultravivlet photoelectric detector and preparing method
  • Gallium nitride base resonant chamber reinforced ultravivlet photoelectric detector and preparing method
  • Gallium nitride base resonant chamber reinforced ultravivlet photoelectric detector and preparing method

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Embodiment Construction

[0039] According to the required target central wavelength, the peak height of the quantum efficiency central peak and the half maximum width of the response peak, the material and structure of the GaN-based RCE detector ultraviolet detector are designed according to the basic theory of the RCE detector combined with the actual technical level and material parameters .

[0040] The structure of the GaN base RCE detector ultraviolet detector as shown in accompanying drawing 1, is to be provided with successively on (0001) sapphire (sapphire) substrate: GaN buffer layer or AlN, Al U Ga 1-U N(0.1Z Ga 1-Z N(0≤ZY Ga 1-Y N / i-Al X Ga 1-X N / p-Al Y Ga 1-Y N resonator or n-Al for Schottky M-S, M-S-M type Y Ga 1-Y N / i-Al X Ga 1-X N resonant cavity, where 0≤XZ Ga 1-Z N(0≤ZY Ga 1-Y There is a Ni / Au double-layer metal conductive electrode on the N, and on the n-Al Y Ga 1-Y N is equipped with Ti / Al / Ni (or Ti, Pt) / Au multilayer metal conductive electrodes, or in Schottky M-S, M-...

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Abstract

Structure of front irradiation type detector includes following parts setup on (0001) sapphire substrate: GaN buffer layer, or AlN, AlUGa1-UN (0.1 smaller than U smaller than 0.9) buffer layer; AlN/AlZGa1-ZN (smaller than or equal to Z smaller than 0.8) distributing Bragg reflection (DBR) bottom mirror; n-AlYGa1-YN / i-AlXGa1-XN / p-AlYGa1-YN resonant cavity in use for p-i-n type, or n-AlYGa1-YN / i-AlXGa1-XN resonant cavity in use for Schottky M-S, M-S-M types, where 0<= X<0.8, 0<=Y<0.9; AlN/AlZGa1-ZN (0 smaller than or equal to Z smaller than 0.8) distributing Bragg reflection top mirror. Reflector in oxide dielectric layer can be used instead of one from bottom mirror or top mirror. Electrodes are setup at two ends of the resonant cavity so as to constitute GaN based resonance enhanced ultraviolet detector.

Description

technical field [0001] The invention relates to a resonance enhanced detector (Resonant Cavity Enhanced-photodetectors, RCEPD). In particular, it relates to a resonance-enhanced ultraviolet detector that uses gallium nitride (GaN)-based materials as distributed Bragg reflectors (Distributed BraggReflector, DBR), and uses GaN-based materials as absorption layers and isolation layers to form a resonant cavity. Structural design and preparation methods. Background technique [0002] GaN-based group III nitride semiconductor materials have wide direct band gaps and excellent physical properties and chemical stability, and are preferred materials for the preparation of ultraviolet light detection devices. GaN-based ultraviolet photodetectors have potential broad application prospects in the fields of space science, missile guidance and early warning, environmental monitoring and forecasting, biological and medical engineering, etc. In the past ten years, the international and d...

Claims

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Application Information

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IPC IPC(8): H01L31/101H01L31/18
CPCY02P70/50
Inventor 江若琏谢自力姬小利周建军韩平张荣刘斌郑有炓
Owner NANJING UNIV
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