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Ultraviolet photo-detector with nano heterogeneous composite structure and preparation method thereof

A composite structure and nanostructure technology, which is applied in the field of ultraviolet photodetectors and its preparation, can solve problems such as work stability and lifetime impact, severe carrier recombination, and reduced photosensitivity, so as to speed up carrier separation and reduce Composite, good radiation resistance and stability effect

Inactive Publication Date: 2013-07-24
HUAZHONG UNIV OF SCI & TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, ZnO nanowires still have some defects, such as a large number of vacancy trap states on the surface, which can absorb oxygen anions generated by oxygen to form a surface depletion layer. When ultraviolet light irradiates ZnO nanowires, the diffusion of electron-hole pairs will be reduced. Affected by the surface depletion layer, resulting in reduced photosensitivity and severe carrier recombination
In addition, ZnO is difficult to withstand acid and alkali corrosion, so its working stability and life are seriously affected in harsh working environments.

Method used

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  • Ultraviolet photo-detector with nano heterogeneous composite structure and preparation method thereof
  • Ultraviolet photo-detector with nano heterogeneous composite structure and preparation method thereof
  • Ultraviolet photo-detector with nano heterogeneous composite structure and preparation method thereof

Examples

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Effect test

Embodiment 1

[0042] According to the method described in this example, the following figure 2 with image 3 (a) The UV detector structure shown, in which ZnO nanorods are wrapped with a layer of TiO2 thin film. Its concrete preparation steps are as follows:

[0043] (1) Select a suitable size glass or silicon wafer, clean it, spin-coat PR1000 photoresist on its surface, and pass the photolithography process. figure 1 The photoresist at the position of the middle interdigitated electrode is washed off after exposure to form grooves.

[0044] (2) Deposit a layer of metal nano film on the surface of the above sample by magnetron sputtering or electron beam evaporation process, the thickness of which is preferably 10 nm.

[0045] (3) Soak the above sample in acetone (for example, 30 min) to remove the photoresist.

[0046] (4) Protect the metal junction plate on the right side of the sample with photoresist.

[0047] (5) Coating a layer of ZnO thin film on the surface of the above sample b...

Embodiment 2

[0053] According to the method described in this example, the following figure 2 and image 3 (b) The UV detector structure shown, in which ZnO nanorods are coated with a layer of TiO 2 nanoparticles. Its concrete preparation steps are as follows:

[0054] (1) Choose PET plastic or PDMS of appropriate size, clean it, spin-coat PR1000 photoresist on its surface, and pass the photolithography process. figure 1 The photoresist at the position of the middle interdigitated electrode is washed off after exposure to form grooves.

[0055] (2) Deposit a layer of metal nano film on the surface of the above sample by magnetron sputtering or electron beam evaporation process, the thickness of which is preferably 100nm.

[0056] (3) Soak the above sample in acetone preferably for 30 minutes to remove the photoresist.

[0057] (4) Protect the metal junction plate on the right side of the sample with photoresist.

[0058] (5) Coating a layer of ZnO thin film on the surface of the abo...

Embodiment 3

[0063] According to the method described in this example, the following figure 2 and image 3 (c) The UV detector structure shown, in which ZnO nanorods are coated with a layer of TiO 2 Nano stave. Its concrete preparation steps are as follows:

[0064] (1) Select a suitable size glass or silicon wafer, clean it, spin-coat PR1000 photoresist on its surface, and pass the photolithography process. figure 1 The photoresist at the position of the middle interdigitated electrode is washed off after exposure to form grooves.

[0065] (2) Deposit a layer of metal nano film on the surface of the above sample by magnetron sputtering or electron beam evaporation process, the thickness of which is preferably 200nm.

[0066] (3) Soak the above samples in acetone for 30 minutes to remove the photoresist.

[0067] (4) Protect the metal junction plate on the right side of the sample with photoresist.

[0068] (5) Coating a layer of ZnO thin film on the surface of the above sample by m...

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Abstract

The invention discloses an ultraviolet photo-detector structure based on a TiO2 / ZnO nano heterogeneous composite structure. The bottommost layer of the ultraviolet photo-detector structure is made of a substrate material, inter-digital electrodes are arranged on the bottommost layer; the bottommost layer is covered by a ZnO thin film; ZnO nanorods are arranged on the thin film; and the surfaces of the nanoroads are of TiO2 nanostructures. The invention also discloses a preparation method of the ultraviolet photo-detector. The preparation method comprises the following steps: (1) plating metal electrodes on the substrate thin sheet to form the inter-digital electrodes; (2) plating the ZnO thin film; (3) synthesizing a ZnO nanorod array; and (5) forming the TiO2 nanostructures on the surfaces of the ZnO nanorods. According to the ultraviolet photo-detector, the TiO2 nanostructures are introduced while ultrahigh current gain of the ZnO ultraviolet detector is kept, the influence of a ZnO surface oxygen cavity trap state can be eliminated by forming a heterogeneous junction, meanwhile, carrier separation is quickened and composition is reduced, the sensitivity and the photocurrent gain of the detector are certainly and obviously improved, and in addition, the chemical stability of the detector is obviously improved because of wrapping of TiO2.

Description

technical field [0001] The invention relates to the fields of micro-nano manufacturing and optoelectronic devices, and more specifically, to an ultraviolet photodetector and a preparation method thereof. Background technique [0002] Ultraviolet light detection technology is another important photoelectric detection technology for both military and civilian use after infrared detection and laser detection technology, and it has been paid more and more attention by people. UV detectors have been widely used in the military for UV guidance, UV alarm, UV communication, UV countermeasures, etc., and civilian applications have been used to monitor jet engine and automobile engine exhaust, mine combustible gas, forest fire early warning, combustion engineering, water purification treatment and other fields. [0003] The early ultraviolet detectors were mainly silicon-based photodiodes. Because their work required the addition of expensive filters, and their ability to resist high...

Claims

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Application Information

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IPC IPC(8): H01L31/18H01L31/109H01L31/0352H01L31/0336
CPCY02P70/50
Inventor 廖广兰孙博史铁林盛文军江婷谭先华
Owner HUAZHONG UNIV OF SCI & TECH
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