Non-refrigeration infrared detector and preparation method thereof

An uncooled infrared and detector technology, used in electrical radiation detectors, semiconductor devices, final product manufacturing, etc. The effect of preventing the possibility, simplifying the process, and improving the efficiency of infrared absorption

Active Publication Date: 2014-04-09
YANTAI RAYTRON TECH
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  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0017] The technical problem to be solved by the present invention is to provide a method for preparing an uncooled infrared detector, which solves the problems of poor compatibility between the heat-sensitive film and the integrated circuit manufacturing process, and the high reflectivity of the detector manufactured by the existing process.

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  • Non-refrigeration infrared detector and preparation method thereof
  • Non-refrigeration infrared detector and preparation method thereof
  • Non-refrigeration infrared detector and preparation method thereof

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Embodiment Construction

[0058] The principles and features of the present invention are described below in conjunction with the accompanying drawings, and the examples given are only used to explain the present invention, and are not intended to limit the scope of the present invention.

[0059] The present invention proposes a new method for preparing an uncooled infrared detector, that is, the patterning of the metal electrode layer is completed first to form a metal electrode, and then the protective layer is deposited, the contact hole is etched, and the heat-sensitive film is deposited again; because the metal electrode is formed first, Making the contact hole with the heat-sensitive film on the metal electrode can expand the size of the contact hole to the edge of the pixel, increase the filling factor of the pixel, reduce the difficulty of the process and reduce the contact resistance between the heat-sensitive film and the electrode, and provide more Lay the foundation for R&D and production o...

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Abstract

The invention provides a non-refrigeration infrared detection preparation method. The method comprises the steps of providing a semiconductor substrate with a reading circuit, sequentially depositing a metal reflection layer, an insulating medium layer, a sacrificial layer, a supporting layer, a metal electrode layer, and a silicon nitride medium layer on the semi-conductor substrate, etching away a part of the silicon nitride layer on the metal electrode layer to enable an metal electrode to be exposed and form a contact hole, depositing a temperature-sensitive film on the semiconductor substrate in which the contact hole is formed, conducting imaging processing on the temperature-sensitive film, depositing a silicon nitride passivation layer, and conducting passivation layer imaging and structure releasing. The invention further provides a non-refrigeration infrared detector structure, namely, the temperature-sensitive film covers the metal electrode so as to enable the infrared reflecting rate of the non-refrigeration infrared detector to be greatly reduced, and the infrared absorbing efficiency of the detector is improved.

Description

technical field [0001] The invention belongs to the field of micro-electromechanical system process manufacturing in semiconductor technology, and in particular relates to an uncooled infrared detector and a preparation method thereof. Background technique [0002] Uncooled infrared detection technology is a technology that senses the infrared radiation (IR) of external objects without a cooling system and converts it into an electrical signal that is processed and output on the display terminal. It can be widely used in many fields such as national defense, aerospace, medicine, production monitoring, etc. . Uncooled infrared focal plane detectors are able to work at room temperature, and have the advantages of light weight, small size, long life, low cost, low power, fast startup and good stability, etc., which meet the needs of civilian infrared systems and some military The urgent need for long-wave infrared detectors in infrared systems has developed rapidly in recent y...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/18H01L31/08G01J5/20
CPCG01J5/20H01L31/022408H01L31/09H01L31/1828H01L31/1876Y02P70/50
Inventor 杨水长甘先锋孙瑞山王宏臣陈文礼王鹏
Owner YANTAI RAYTRON TECH
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