Method for manufacturing back contact solar energy batteries

A technology for solar cells and manufacturing methods, applied in final product manufacturing, sustainable manufacturing/processing, circuits, etc., can solve problems such as high technical cost and difficulty in implementing P-type diffusion technology, and achieve process simplification, easy implementation, and cost reduction. Effect

Active Publication Date: 2010-07-14
BEIJING NAURA MICROELECTRONICS EQUIP CO LTD
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  • Abstract
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AI Technical Summary

Problems solved by technology

[0008] The above existing technologies have at least the following disadvantages: P-type diffusion technology is difficult to realize and the technology cost is high

Method used

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  • Method for manufacturing back contact solar energy batteries
  • Method for manufacturing back contact solar energy batteries
  • Method for manufacturing back contact solar energy batteries

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specific Embodiment

[0029] Specific examples, such as image 3 As shown, the process flow includes steps:

[0030] Step 1, silicon wafer cleaning, surface texture:

[0031] Zone-melting N-type monocrystalline silicon wafers with a thickness of 220-280um are selected as the base material, and the silicon wafers are cleaned with a NaOH solution with a mass fraction of 2%-15% and a temperature between 60°C and 90°C to remove the silicon wafers. The surface is damaged, and the front side of the silicon wafer is made into an inverted pyramid suede with a mixed solution of KOH and IPA (isopropanol).

[0032] Step 2, growing a P-type doped silicon dioxide layer:

[0033] A P-type doped layer is grown on the back of the substrate. The doping source can be boron or other P-type dopants. The P-type doped layer can be deposited by conventional techniques such as atmospheric pressure chemical vapor deposition and plasma enhanced chemical vapor deposition. Deposited by various deposition methods, the thick...

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Abstract

The invention discloses a method for manufacturing back contact solar energy batteries, comprises the following steps of: firstly growing a P type doped silicon dioxide layer on an N type silicon chip; then growing a non-doped silicon dioxide layer on a P type doped layer; after that, printing a corrosive agent or an anti corrosive agent on the non-doped silicon dioxide layer to corrode the P type doped silicon dioxide layer and the non-doped silicon dioxide layer so as to form required patterns; and finally carrying out N type adulteration on the back face and the front face of the silicon chip to form an N type doped layer. The P type doped layer is protected by the non-doped silicon dioxide layer, and an N front surface field on the front face of the battery and a PN alternating doped layer on the back face of the battery are realized in the N type doped step at the same time, thereby reducing the diffusion step, reducing the cost and simplifying the process.

Description

technical field [0001] The invention relates to a solar cell manufacturing technology, in particular to a back contact solar cell manufacturing method. Background technique [0002] Solar cells are semiconductor devices that convert solar energy into electrical energy through the photovoltaic effect. They are mainly made of semiconductor materials. . The basic structure of a silicon solar cell is a PN junction. When light enters the cell, electron-hole pairs are generated due to the photoelectric effect. These minority carriers (hereinafter referred to as minority carriers) are accelerated by the built-in electric field of the PN junction and are positively and negatively The electrodes collect it as electrical energy and store it. [0003] like figure 1 As shown, in prior art 1, a traditional solar cell diffuses a layer of N-type doped layer 3 on the surface of P-type material 2 to form a PN junction. Electron-hole pairs (electron-hole) are generated on both sides of th...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/18
CPCY02P70/50
Inventor 肖青平
Owner BEIJING NAURA MICROELECTRONICS EQUIP CO LTD
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