Gallium nitride based avalanche detector and preparation method thereof

Abstract

The invention relates to a gallium nitride based avalanche detector and a preparation method thereof. The gallium nitride based avalanche detector comprises a substrate, an N-type doped GaN ohmic contact layer, an unintentional doped GaN absorbing layer, an N-type doped Al component gradual changed AlGaN layer, an unintentional doped AlGaN avalanche multiplying layer, a P-type doped AlGaN ohmic contact layer, an N-type ohmic contact electrode and a P-type ohmic contact electrode, wherein the N-type doped GaN ohmic contact layer is prepared on the substrate; the unintentional doped GaN absorbing layer is prepared on the N-type doped GaN ohmic contact layer, and the area of the unintentional doped GaN absorbing layer is smaller than that of the N-type doped GaN ohmic contact layer; the N-type doped Al component gradual changed AlGaN layer is prepared on the unintentional doped GaN absorbing layer; the unintentional doped AlGaN avalanche multiplying layer is prepared on the N-type doped Al component gradual changed AlGaN layer; the P-type doped AlGaN ohmic contact layer is prepared on the unintentional doped AlGaN avalanche multiplying layer; the N-type ohmic contact electrode is prepared on the N-type doped GaN ohmic contact layer; and the P-type ohmic contact electrode is prepared on the P-type doped AlGaN ohmic contact layer.

Description

technical field [0001] The invention belongs to the field of semiconductor devices, in particular the structure and manufacturing method of a novel GaN-based avalanche detector. Background technique [0002] As a third-generation semiconductor, gallium nitride (GaN) and its series of materials (including aluminum nitride, aluminum gallium nitride, indium gallium nitride, and indium nitride) are characterized by their large band gap and wide spectral range (covering from ultraviolet to Infrared full band), high temperature resistance and corrosion resistance, it has great application value in the field of optoelectronics and microelectronics. GaN-based ultraviolet detector is a very important GaN-based optoelectronic device, which is widely used in civil and military fields such as missile early warning, rocket plume detection, ultraviolet communication, biochemical weapon detection, aircraft guidance, spacecraft, ozone layer hole detection, fire monitoring, etc. important a...

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Problems solved by technology

However, most of the existing avalanche detectors use absorption and multiplication in the same layer, so the detection sensitivity and

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