58 results about "Out of band radiation" patented technology

According to one exemplary embodiment, a laser beam formatting module for use in a lithographic system to fabricate a semiconductor wafer comprises an aperture plate having, for example, a circular aperture and capable of being situated between a laser source and a target, and a lens assembly, in a light path between the aperture plate and the target. The laser beam formatting module can produce a substantially uniform laser beam intensity across a target during fabrication of a semiconductor wafer in a laser-produced plasma (LPP) lithographic process using, for example, extreme ultraviolet light (EUV). In one embodiment, a laser beam formatting module improves energy conversion efficiency, reduces out-of-band radiation emission, avoids heating of reflective optics, and eliminates the need for an out-of-band radiation filter.

Systems and methods for monitoring and controlling the operation of extreme ultraviolet (EUV) sources used in semiconductor fabrication are disclosed. A method comprises providing a semiconductor fabrication apparatus having a light source that emits in-band and out-of-band radiation, taking a first out-of-band radiation measurement, taking a second out-of-band radiation measurement, and controlling the in-band radiation of the light source, at least in part, based upon a comparison of the first and second out-of-band measurements. An apparatus comprises a detector operable to detect out-of-band EUV radiation emitted by an EUV plasma source, a spectrometer coupled to the electromagnetic detector and operable to measure at least one out-of-band radiation parameter based upon the detected out-of-band EUV radiation, and a controller coupled to the spectrometer and operable to monitor and control the operation of the EUV plasma source based upon the out-of-band measurements.

A patternable layer is formed over a substrate. A photo-sensitive layer is formed over the patternable layer. The photo-sensitive layer contains an additive. The additive contains at least a floating control chemical and a volume control chemical. A spin drying or a baking process is performed to the photo-sensitive layer. The floating control chemical causes the additive to rise upward during the spin drying or baking process. Thereafter, as a part of an extreme ultraviolet (EUV) lithography process, the photo-sensitive layer is exposed. One or more outgassing chemicals are generated inside the photo-sensitive layer during the exposing. The volume control chemical is sufficiently voluminous and dense to trap the outgassing chemicals inside the photo-sensitive layer.

The invention is directed to an arrangement for the suppression of unwanted spectral components (‘out-of-band’ radiation, as it is called) in a plasma-based radiation source. The object of the invention is to find a novel possibility for the suppression of unwanted spectral components in radiation exiting from a plasma-based EUV radiation source which permits a simple suppression of out-of-band radiation outside the desired EUV range without requiring costly manufacturing and adjustment of diffraction gratings. This object is met according to the invention in that a filter unit is provided between the plasma and an application location of the EUV radiation, which filter unit has at least one gas curtain comprising at least one rapidly flowing gas whose molecules have no absorption maxima for the desired EUV radiation and intensive absorption maxima for other, unwanted wavelengths that are emitted, at least in the IR region. For the purpose of generating the gas curtain, at least one slit nozzle and an efficient gas sink are arranged laterally opposite one another with respect to an optical axis of the beam bundle in order to limit the gas curtain in a spatially defined manner and to remove it again from the vacuum chambers as completely as possible.