EUV mask with ITO absorber to suppress out of band radiation

Abstract

The present disclosure also provides a photolithography mask. The photolithography mask includes a substrate that contains a low thermal expansion material (LTEM). A reflective structure is disposed over the substrate. A capping layer is disposed over the reflective structure. An absorber layer is disposed over the capping layer. The absorber layer contains an indium tin oxide (ITO) material. In some embodiments, the ITO material has a SnO6 crystalline structure.

Description

technical field [0001] The present invention relates to integrated circuit devices, and more particularly, to EUV masks with ITO absorbers that suppress out-of-band radiation. Background technique [0002] The semiconductor integrated circuit (IC) industry has experienced exponential growth. Technological advances in IC materials and design have produced generations of ICs, each with smaller and more complex circuits than the previous generation. In the course of IC evolution, functional density (ie, the number of interconnected devices per chip area) has generally increased, while geometry size (ie, the smallest component (or line) that can be created using a fabrication process) has decreased. This scaling down process generally provides benefits by increasing production efficiency and reducing associated costs. This scaling down has also increased the complexity of IC processing and manufacturing. To achieve these advances, similar developments in IC processing and man...

AI Technical Summary

Problems solved by technology

[0004] However, traditional EUV masks and their fabrication can still have flaws

For example, conventional EUV masks may not be able to effectively mitigate out-of-band (OOB) radiation, which leads to lithographic performance degradation such as image contrast loss

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