49results about How to "Improve line width uniformity" patented technology

A method of forming patterns includes (a) coating a substrate with a resist composition for negative development to form a resist film having a receding contact angle of 70 degrees or above with respect to water, wherein the resist composition for negative development contains a resin capable of increasing the polarity by the action of an acid and becomes more soluble in a positive developer and less soluble in a negative developer upon irradiation with an actinic ray or radiation, (b) exposing the resist film via an immersion medium, and (c) performing development with a negative developer.

A method of forming patterns includes (a) coating a substrate with a resist composition for negative development to form a resist film having a receding contact angle of 70 degrees or above with respect to water, wherein the resist composition for negative development contains a resin capable of increasing the polarity by the action of an acid and becomes more soluble in a positive developer and less soluble in a negative developer upon irradiation with an actinic ray or radiation, (b) exposing the resist film via an immersion medium, and (c) performing development with a negative developer.

A substrate subjected to an exposure process by an exposure unit is transported into a cleaning processing unit in a substrate processing apparatus. An adjustment is made to the presence time (more specifically, the waiting time or the cleaning time) of the exposed substrate in the cleaning processing unit to adjust the instant of the end of a cleaning process so as to provide a constant time interval between the instant of the completion of the exposure process and the instant of the end of the cleaning process. Such adjustments provide a constant time interval between the instant of the completion of the exposure process and the instant of the start of a post-exposure bake process, and also provide a constant time interval between the, instant of the completion of the cleaning process and the instant of the start of the post-exposure bake process. This achieves further improvements in the line width uniformity of a pattern formed when a chemically amplified resist is used.

The invention provides a developing method which comprises the following steps of: inclining a substrate relative to a developing machine table, wherein a first side edge of the substrate is upward, and a second side edge, which is opposite to the first side edge, of the substrate is downward; and an inclination angle between the substrate and the developing machine table is theta1 which is more than 0 degree and less than 90 degrees; uniformly spraying a developing solution to the substrate through a nozzle arranged above the substrate, wherein the developing time is t1; then inclining the substrate relative to the developing machine table, wherein the second side edge of the substrate is upward, and the first side edge of the substrate is downward; and an inclination angle between the substrate and the developing machine table is theta2 which is more than 0 degree and less than 90 degrees; uniformly spraying a developing solution to the substrate through the nozzle arranged above the substrate, wherein the developing time is t2. By the developing method, the uniformity of a linear width of a photoetched graph obtained by development can be improved.

The invention provides a filling method for a redundancy graph. Through software for filling the redundancy graph, firstly, the whole area of a domain is filled with the redundancy graph; secondly, a prohibited area of the redundancy graph is selected; thirdly, the redundancy graph located in the prohibited area is removed through the Boolean operation. By means of the method, filling of the redundancy graph with the larger area can be achieved, the graph density of the whole domain is improved, and therefore line width uniformity of a wafer after the wafer is etched and flatness of the wafer after chemical machinery grinding are improved.

The invention discloses a proximity contact scan exposure device which successively comprises the following parts along the optical propagation direction: an illumination system which is used for outputting parallel lights; a mask which is irradiated by the parallel lights to generate emergent light output; a substrate which is positioned below the mask and is irradiated by the emergent lights emitted from the mask; and a working table which supports the mask and the substrate. When the scan exposure device is in use, the mask and the substrate synchronously move with the working table. In comparison with a traditional aligned mask aligner, although the yield of the device provided by the invention is a little lower, dose uniformity is raised such that linewidth uniformity (CDU) is improved. In comparison with a traditional projection type mask aligner, although precision of the device provided by the invention is not such high, projection lens is not required so as to reduce the cost.

A positive resist composition comprising: a resin that comprises a repeating unit including a specific norbornane lactone structure and a repeating unit including a specific alicyclic hydrocarbon structure, and that increases a solubility of the resin in an alkaline developer by an action of an acid; and a compound that generates an acid upon treatment with one of an actinic ray and radiation, and a pattern forming method utilizing the same.

When a first substrate transferred outwardly from an indexer cell is the last substrate prior to reticle change in an exposure apparatus, the outward transfer of a second substrate to be processed subsequently to the first substrate from the indexer cell is temporarily stopped. After a lapse of time corresponding to reticle replacement time, the outward substrate transfer is restarted, and the second substrate is transferred outwardly from the indexer cell. For the exposure apparatus, the second substrate subjected to a resist coating process is received at the instant when the reticle replacement is completed after the completion of the exposure process of the first substrate. This provides a constant time interval between the completion of the resist coating process of substrates and the execution of the exposure process thereof without the decrease in processing efficiency. As a result, a uniform processing history for the substrates is achieved to further improve the line width uniformity of a pattern.

The invention provides a developing method and a developing device. The method comprises the following steps of controlling a base plate to incline for a first angle theta 1 towards a first direction relative to a developing machine table, controlling a plurality of spray nozzles to be on the first plane parallel to the base plate, uniformly spraying developing liquid on the base plate for developing; controlling the base plate to incline for a second angle theta 2 towards a second direction relative to the developing machine table, controlling the plurality of the spray nozzles to be on a second plane parallel to the base plate, and uniformly spraying the developing liquid on the base plate for developing; controlling the base plate to incline for a third angle theta 3 towards a third direction relative to the developing machine table, controlling the plurality of the spray nozzles to be on the third plane parallel to the base plate, uniformly spraying the developing liquid on the base plate for developing; and controlling the base plate to incline for a fourth angle theta 4 towards a fourth direction relative to the developing machine table, controlling the plurality of the spray nozzles to be on a fourth plane parallel to the base plate, and uniformly spraying the developing liquid on the base plate for developing. According to the scheme, the linear width uniformity of a developed photoetching pattern can be improved.

The invention discloses a photoetching process method, which comprises the following steps: providing a product wafer, and measuring a first surface height distribution in an exposure plane before photoresist applying; applying photoresist, and measuring a second surface height distribution in the exposure plane; dividing the exposure plane into n exposure subareas and calculating a third thickness value of the photoresist in each exposure subarea; providing n test wafers and coating the n test wafers with photoresist with a third thickness; exposing the test wafers; measuring the line width of each test exposure pattern to obtain a corresponding reference pattern line width and calculating the exposure pattern line width difference of each exposure subarea; converting each exposure pattern line width difference into a design pattern line width difference on a product mask; manufacturing a product mask, and adding the design pattern line width difference to perform line width correction; and coating the product wafer with photoresist, and carrying out exposing and developing. According to the invention, exposure pattern line width difference caused by uneven surface morphology in the wafer exposure plane can be reduced or eliminated, and the line width uniformity of the product can be improved.

The invention relates to an array baseplate, a manufacturing method thereof and a display device. The array baseplate comprises grid lines, common electrode lines, data lines, a first spacing layer and/or a second spacing layer, the grid lines, the common electrode lines and the data lines are arranged on a substrate, the first spacing layer is arranged in an overlapped area of the common electrode lines and the data lines and positioned between the common electrode lines and the data lines and extends to at least one side by preset length in the width direction of the data lines, and the second spacing layer is arranged in an overlapped area of the grid lines and the data lines and positioned between the grid lines and the data lines and extends to at least one side by preset length in the width direction of the data lines. By arranging the first spacing layer and/or the second spacing layer, when a data line metal layer is exposed, width difference of the data lines caused by difference in light reflectivity of common electrode layer metal and/or grid line layer metal and data line layer metal is reduced, so that width uniformity of the data lines is improved, risk of breaking of the data lines is lowered, and product yield is increased.

An auxiliary exposure apparatus is for performing auxiliary exposure of applying light of a predetermined wavelength from a laser light source to a resist film on a wafer, separately from exposure processing of transferring a pattern of a mask to the resist film applied on the wafer, and includes: a first total reflection mirror configured to reflect the light from the laser light source toward the wafer; and an imaging device including a light receiving part configured to receive light after reflected by the wafer.

The present invention provides a resist composition which can not only improve the solubility when preparing a resist and the adhesiveness of a resist film during development, but also have improved resist stability and excellent safety , which is a resist composition containing a resist component and an organic solvent selected from the group containing dipropylene glycol monoalkyl ether, dipropylene glycol alkyl ether acetate, etc. 1 kind of dipropylene glycol derivative, and the following formula (1)~(4) of this dipropylene glycol derivative (in the formula, R1 represents an alkyl group or an aryl group, R2 represents a hydrogen atom, an alkyl group, an aromatic group group, acetyl group or propionyl group, R2 represents acetyl group or propionyl group), the content rate of the structural isomer represented by formula (1) in the structural isomer represented by formula (1) is 30% by weight or more and less than 100% by weight % mixture of structural isomers.

The invention discloses a semiconductor structure and a forming method thereof. The forming method comprises the steps of providing a substrate; forming a to-be-doped material layer and a top hard mask layer located on the to-be-doped material layer on the substrate; performing one or more patterning processing on the top hard mask layer, the patterning processing comprising: forming a pattern structure layer on the top hard mask layer; etching the top hard mask layer by taking the graphic structure layer as a mask to form a mask opening; and removing the pattern structure layer; and after the last time of patterning processing is completed, doping ions into the to-be-doped material layer exposed out of the mask opening, and taking the to-be-doped material layer doped with ions as a target pattern layer. The etching resistance of the top hard mask layer is high, so that in the process of forming the mask opening, the influence of transverse etching on the side wall of the mask opening is small, the perpendicularity and flatness of the side wall of the mask opening are improved, the line width uniformity of the target pattern layer is correspondingly improved, and the pattern transmission precision is further improved.

The invention discloses exposure equipment and an exposure system. The exposure equipment comprises a substrate and a base, wherein the base is arranged on the substrate and is used for bearing the substrate, the exposure equipment is characterized by further comprising an adjustment device, and the adjustment device is arranged between the substrate and the base ad is used for adjusting curvatureor/and temperature. In the exposure equipment, the curvature or/and temperature of the base can be adjusted by the adjustment device, so that the curvature of a base surface is consistent with bending deformation of a mask, the curvature of a to-be-exposed substrate is also consistent with the bending deformation of the mask, and gaps in lower surfaces of the masks at different positions and an upper surface of the substrate are consistent; or/and the temperatures of the base at different positions can be adjusted by the adjustment device, so that the temperatures of the base at different positions are maintained consistent, and the linear width uniformity of the exposure substrate at different positions is improved.