Method for controlling wafer ion implantation dosage

A technology of ion implantation and control method, which is applied in the field of dose control of wafer ion implantation, and can solve problems such as linear motor speed error and ion source instability

Active Publication Date: 2014-05-07
BEIJING SHUOKE ZHONGKEXIN ELECTRONICS EQUIP CO LTD
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  • Abstract
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Problems solved by technology

[0004] The patent of the present invention is a wafer implant dose control method proposed for the problems of unstable ion source,

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  • Method for controlling wafer ion implantation dosage
  • Method for controlling wafer ion implantation dosage

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[0008] specific implementation plan

[0009] The present invention will be further introduced below according to the accompanying drawings and specific examples, but not as a limitation to the present invention.

[0010] Such as figure 1 As shown, the hardware device for dose control of wafer ion implantation includes: ion beam current (1), wafer (2), target disc (3), closed-loop Faraday cup (4), X-Tilt motor (5), target stage (6 ), air bearing (7), linear motor (8), PMAC controller (9), target chamber (10). In order to ensure the purity of the ion beam, the environment for wafer implantation must be high vacuum, and the target chamber is a high vacuum environment. The ion beam current generated from the ion source is adjusted, and the ion beam current (1) reaching the target chamber meets the requirements for uniformity and parallelism before performing scanning implantation. The linear motor (8) is at the lowermost end of the motion stroke (loading position), and the targ...

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Abstract

The invention discloses a method for controlling the wafer ion implantation dosage. The hardware comprises an ion beam (1), a wafer (2), a target disk (3), a closed-loop Faraday cup (4), an X-Tilt motor (5), a target platform (6), a linear motor (8), a PMAC controller (9), and a vacuum target chamber (10). In order to reduce particle impurities, process of ion implantation is carried out in the vacuum target chamber. The beam is generated by an ion source, and the processed ion beam (1) should meet requirements in uniformity and parallelism in order to arrive at the target chamber. According to process requirements, an included angle is reserved between the wafer (2) and the vertical direction. The linear motor (8) drives an air bearing to move up and down, and the wafer is ensured to move at constant speed when passing through a beam area. The implantation dosage at a single time and the total number N of scanning times are coordinated, and the N is an even number. According to the method, the scanning speed and the total number of scanning times of the motor are controlled through controlling the implantation dosage at a single time, thereby realizing purposes of being accurate in implantation dosage and improving the dosage uniformity.

Description

technical field [0001] The invention relates to a semiconductor device manufacturing control system, in particular to a wafer ion implantation dose control method. Background technique [0002] With the development of semiconductor integrated circuits, the requirements for the overall performance and process of ion implanters are getting higher and higher, and the control of wafer implant dose is a key part of it. The uniformity and accuracy of implant dose directly affect the quality of wafers. . [0003] Due to the unavoidable fluctuation of the ion source, the beam current value reaching the target chamber changes, and there is an error between the actual speed of the linear motor and the theoretical speed, the actual single implant dose obtained from this is relative to the single implant dose There will be deviations. When the wafer completes the dose implantation and stays at the top, since the position of taking the wafer is at the bottom, the wafer needs to be move...

Claims

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Application Information

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IPC IPC(8): H01J37/317
Inventor 王孟志
Owner BEIJING SHUOKE ZHONGKEXIN ELECTRONICS EQUIP CO LTD
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