Dose uniformity during scanned ion implantation

Abstract

The present invention is directed to implanting ions in a workpiece in a serial implantation process in a manner that produces one or more scan patterns on the workpiece that resemble the size, shape and / or other dimensional aspects of the workpiece. Further, the scan patterns are interleaved with one another and can continue to be produced until the entirety of the workpiece is uniformly implanted with ions.

Description

technical field [0001] The present invention relates generally to semiconductor processing systems and, more particularly, to controlling movement of a substrate relative to an ion beam during ion implantation. Background technique [0002] In the semiconductor industry, various production processes are typically performed on a substrate (eg, a semiconductor workpiece) to achieve various results on the substrate. For example, ion implantation may be performed to achieve specific properties on or within the substrate, such as limiting the diffusivity of the substrate's dielectric layer by implanting specific types of ions. Traditionally, the ion implantation process is performed either as a batch process, where multiple substrates are processed simultaneously, or as a sequential process, where a single substrate is individually processed in the sequential process. For example, conventional high-energy or high-current batch ion implanters can be operated to obtain a short ion...

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Problems solved by technology

However, processing substrates in such batches typically makes ion implanters considerably larger

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