57results about How to "Improve divergence angle" patented technology

A white light generating unit includes an LED structure and a lens structure. The LED structure generates a light. The lens structure has a convex lens or a concave lens. The lens structure has a fluorescent member that receives the light from the LED structure to emit a white light.

An illumination device has a plurality of sealing structures each including a light-emitting diode, sealed by a high refractive index transparent material member which is further sealed by a low refractive index transparent material member. To increase a divergence angle of light radiation, the portion of the high refractive index transparent material member which covers an upper surface of the light-emitting diode is structured so as to satisfy a relation H>(L/2)/tan { sin⁻¹(n₁/n₂)}, where H represents a thickness of the high refractive index transparent material member measured at the central portion of the upper surface of the light-emitting diode, L represents the length of one side of the upper surface of the light-emitting diode, n₁ represents the refractive index of the high refractive index transparent material member and n₂ represents the refractive index of the low refractive index transparent material member.

The invention relates to a device and a method for the pulse laser etching of a conducting film layer on double-sided indium tin oxide (ITO) glass. The front and back surfaces of a film material are provided with a set of pulse laser etching device respectively. Each set of pulse laser etching device comprises a high-frequency short-pulse laser, a semi-transmitting semi-reflecting mirror, a Glan prism and a completely reflecting mirror; the output end of the high-frequency short-pulse laser is sequentially provided with an optical gate, a beam expander and the semi-transmitting semi-reflecting mirror; the output end of the semi-transmitting semi-reflecting mirror is provided with a first 1/2 wave plate and the completely reflecting mirror; the output end of the first 1/2 wave plate is sequentially provided with a first Glan prism and a first three-dimensional (3D) dynamic focusing lens; the output end of the first 3D dynamic focusing lens is provided with a first galvanometer; the output end of the completely reflecting mirror is provided with a second 1/2 wave plate; the output end of the second 1/2 wave plate is sequentially provided with a second Glan prism and a second 3D dynamic focusing lens; the output end of the second 3D dynamic focusing lens is provided with a second galvanometer; and the output ends of the first and second galvanometers are both dead against the surface of the film material. The device and the method are used for etching double-sided ITO glass in different touch screen products to realize high-efficiency high-accuracy circuit manufacturing.

The invention provides an optoelectronic device combining a vertical cavity surface emitting laser (VCSEL) and a photodetector for monitoring the output power of the vertical cavity surface emitting laser. To improve the signal-to-noise ratio of the photodetector, a light deflector is interposed between the photodetector and the VCSEL.

The invention relates to a device and a method for making metal film group holes by using ultra-short pulse laser. An optical shutter is arranged at the output end of a high-frequency ultra-short pulse laser device, a beam expander is arranged at the output end of the optical shutter, a 45-degree total reflector is arranged at the output end of the beam expander, a vibrating mirror and a scanning field mirror are sequentially arranged at the output end of the 45-degree total reflector, the scanning field mirror is opposite to a working platform, a charge coupled device (CCD) alignment observation system is arranged above the working platform, a group of clamping cylinders are arranged on the working platform, an air blowing system is arranged at one side of the working platform, a dust collecting system is arranged at the other side of the working platform, and a dust collecting system is also arranged below the working platform. By optical focusing of the ultra-short pulse laser device, the focal point is positioned on a metal film material, so that energy of the laser device is efficiently utilized; and by controlling the pulse number and the pulse duration of the ultra-short pulse laser device, the pulse number and the pulse time for forming each metal film aperture are modulated, so that required apertures on each metal film are sequentially machined.

The invention relates to a device and a method for etching silver syrup on an electronic product. The device is characterized in that an optical shutter is arranged at an output end of a high-frequency short pulse laser, wherein a beam expanding lens is arranged at the output end of the optical shutter; a 1/2 wave plate and a Glan prism are arranged at the output end of the beam expanding lens in turn; a 45-degree holophote is arranged at the output end of the Glan prism; a vibrating lens and a scanning field lens are arranged at the output end of the 45-degree holophote in turn; the scanning field lens is opposite to a four-shaft absorbing platform; a coaxial blowing and sucking dust-collecting system is arranged on the four-shaft absorbing platform; and CCD (charge coupled device) contraposition systems are respectively arranged at opposite angle positions of the four-shaft absorbing platform. The method is characterized by using a high-frequency infrared pulse laser as a laser source, processing a target position of a material by using a diagonal CCD grabbing target, ensuring a processing chart being one-to-one corresponding to a sample position on a platform, and etching the silver syrup, copper films or molybdenum aluminum layers in invisible areas of different touch screen products, thereby achieving the etching purpose by gasifying film materials in the invisible areas under the action of the high-frequency short pulse infrared laser.

The invention relates to a total internal reflection micro lens array for a wide-angle lighting system. The micro lens array includes a plurality of Fresnel lens structures formed on a same optical incidence surface. Each of the Fresnel lens structure comprises a plurality of grooves, each having a reflecting surface and a refractive surface. Incoming radiation incident through the incidence surface of the lens structure is internally totally reflected by the reflecting surface, refracted by the refractive surface and exits the lens structure.

The invention discloses a preparation method of a quantum well emitting semiconductor laser used for improving the output light spot, relating to the technical field of a semiconductor laser. The preparation method comprises the steps as follows: A. a Ga-As damping layer and a Ga-In-P damping layer are sequentially prepared on an N-typed Ga-As underlay; B. an Al-Ga-In-P limiting layer, a fibre waveguide layer and an active layer are sequentially prepared on the Ga-In-P damping layer and a structure which limits heterostructures is respectively formed; C. a dual-ridge waveguide is formed on an external extension sheet by etching twice; a ridge-shaped table is prepared to be taken as a light outlet surface; D. an electric insulation film is deposited on the ridge-shaped table; E. a P-surface electrode is prepared on the electric insulation film; F. an N-surface electrode is prepared after the N-typed underlay is thinned and polished. The preparation method of the invention ensures that the original output power and the photoelectric conversion efficiency of the ridge-shaped fibre wave guide laser are not affected basically, increases the parallel divergence angle and improves the output light spot of the laser.

The invention relates to a device and method for laser etching cathode thin film materials of OLED displays. An electric shutter and an electric beam expander are arranged at the output end of the high-frequency short-pulse laser, and a 1/2 wave plate is arranged at the output end of the electric beam expander. 1 The output end of the /2 wave plate is arranged with a polarization beam splitter, the output end of the polarization beam splitter is arranged with a first half-mirror and a first 45-degree reflector, and the output end of the first half-mirror is arranged with a first focusing mirror and a first half-mirror. The second 45-degree reflective mirror, the output end of the second 45-degree reflective mirror is arranged with a second focusing mirror, the output end of the first 45-degree reflective mirror is arranged with a second half mirror, and the output end of the second half mirror is arranged There is a third focusing mirror and a third 45-degree reflecting mirror, and a fourth focusing mirror is arranged at the output end of the third 45-degree reflecting mirror, and the output end of the focusing mirror is facing the two-axis adsorption platform. The cathode material of the OLED display is vaporized under the action of a high-frequency short-pulse laser to achieve the purpose of erosion, and the four beams realize the line etching of the cathode area.

The invention relates to a device and a method for etching a copper conducting film on glass substrate ink by using pulse laser. An optical gate and a beam expander are arranged at the output end of a high-frequency pulse laser in turn; a 1/2 wave plate and a Glan prism are arranged at the output end of the beam expander in turn; a high-reflectivity lens is arranged at the output end of the Glan prism; a total reflection mirror is arranged at the output end of the high-reflectivity lens; a vibrating mirror field lens system is arranged at the output end of the total reflection mirror; the output end of the vibrating mirror field lens system is opposite to a four-axis high-accuracy platform; a charge coupled device (CCD) contrapuntal observation system is arranged above the four-axis high-accuracy platform; a plasma air blowing system is arranged on one side of the four-axis high-accuracy platform, and a dust collection system is arranged on the other side of the four-axis high-accuracy platform; a real-time power monitoring probe is also arranged at the output end of the high-reflectivity lens and is connected with the vibrating mirror field lens system through a communication system and a control system; and the high-frequency pulse laser is used for etching lines of a copper conducting film layer in an invisible area of a black ink substrate on glass.

In a semiconductor laser 1, a current blocking layer 19 covers a p-type 2^nd cladding layer 17 and a p-type cap layer 18 that extend in a lengthwise direction of an optical resonator, at both a light-emission end and an end opposite the light-emission end, to thus form non-current injection regions in an optical waveguide. By making current blocking layer 19 at the light-emission end large enough that carriers flowing from a current injection region do not reach the light-emission end surface, the light intensity distribution in the near field at the light-emission end surface is strongly concentrated, allowing the horizontal divergence angle of an emerging laser beam to be enlarged. This structure makes it possible to enlarge the horizontal divergence angle independently after having optimized the thickness of cladding layers and the size of the current injection region.

A luminescent keyswitch module includes a base plate, a keyswitch, a light guide plate, a light source, a diffusion structure, and a reflector. The keyswitch is disposed on the base plate. The light guide plate, disposed under the base plate, has an accommodating space communicated with a through hole of the base plate. The light source passes through the through hole, is accommodated in the accommodating space, and emits light having a first divergence angle. The diffusion structure is accommodated in the accommodating space and located between the light source and the light guide plate. The light passes through the diffusion structure. The light leaving the second light exit surface has a second divergence angle larger than the first divergence angle. The reflector is disposed under the light guide plate, so as to reflect the light to pass through the light guide plate and the base plate to the keyswitch.

The invention provides a small divergence angle ridge-type laser device and manufacturing method therefor. The laser device comprises an epitaxial structure and a ridge waveguide structure formed on the epitaxial structure, wherein the ridge waveguide structure comprises a parallel gain region and a light field mode expanding region that are orderly arranged along a light emitting direction, width of the light field mode expanding region gradually increases along the light emitting direction, a narrow end of the light field mode expanding region is connected with the parallel gain region, width of the narrow end of the light field mode expanding region equals width of the parallel gain region, the parallel gain region is 100 to 300 um in length, and the light field mode expanding region is 10 to 150 um in length. According to the small divergence angle ridge-type laser device and the manufacturing method therefor, no adjustment of the epitaxial structure is needed, no new epitaxial technology or technology process is needed, increase of a threshold current can be controlled in a restrained way, output power of a semiconductor laser device cannot be limited, output power can be improved by more than 10%, and main parameter performance during utilization can be improved to a certain extent.

The present invention discloses a beam combination device based on a photonic crystal laser. The device comprises: a tube; a stepping heat sink configured to dispose photon laser short bars and realize the overlapping of faculas of a fast-axis direction after laser emitted from the photon laser short bars at different heights of steps passes through a reflector; a spherical lens configured to compress angles of divergence of the fast-axis direction and a slow-axis direction; the reflector configured to change a laser propagation direction; and a focusing coupling mirror configured to couple the light beam after the laser is subjected to beam combination (the overlapping of the fast-axis direction) into fibers. The beam combination device based on the photonic crystal laser reduces the usage quantity of lenses and the volume of the tube, reduce the manufacturing cost, the assembling and the regulation of the lenses are easier, and the device is more compact in structure so as to more easily couple into fibers with small core diameters. The beam combination device based on the photonic crystal laser also can realize the coupling output with hectowatt magnitudes through simple extension.