High-voltage ESD (electro-static discharge) protective device triggered by bidirectional substrate

Abstract

The invention discloses a high-voltage ESD (electro-static discharge) protective device triggered by a bidirectional substrate. The high-voltage ESD protective device triggered by the bidirectional substrate can be used for an on-chip IC (integrated circuit) ESD protective circuit and mainly comprises a substrate Psub, a high-voltage deep N trap, a lightly doped p-type drift region, a first highly doped N+ injection region, a first P+ injection region, a second N+ injection region, a second P+ injection region, a third N+ injection region, a third P+ injection region, a polycrystalline silicon grid, a grid thin oxide layer and a plurality of field oxide isolation regions. Reverse PN nodes at the interface part of the high-voltage N well or the N well and the substrate can be triggered and conducted through the forward and reverse ESD high-voltage pulse effect, two structures of internal SCR (silicon controlled rectifier) and LDMOS (laterally diffused metal oxide semiconductor) operate at the same time so as to form an ESD current discharge path to improve the secondary breakdown current of the device and lower the conducted resistance. The maintaining voltage of the device is improved through hoisting the channel length of the LDMOS device, the internal structure design as well as optimization of layout hierarchy, and the high-performance ESD protection is realized.

Description

technical field [0001] The invention belongs to the field of electrostatic protection of integrated circuits, and relates to a high-voltage ESD protection device, in particular to a high-voltage ESD protection device triggered by a bidirectional substrate, which can be used to improve the reliability of on-chip high-voltage ESD protection. Background technique [0002] With the rapid development of intelligent power technology and high-power semiconductor devices, electronic products are increasingly miniaturized and portable, and the application fields of power electronic devices are constantly expanding. According to the survey, among the various factors that lead to the failure of power electronic devices and their IC functions, ESD is the main factor for the failure of devices and their ICs. This is because the devices or products may generate static electricity during manufacturing, packaging, testing and use. , When people make these objects contact each other without ...

AI Technical Summary

Problems solved by technology

The present invention provides a new technical solution, and designs a high-voltage ESD protection device with strong anti-latch ability and strong robustness, which can greatly reduce the risk of circuit function failure caused by ESD.

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