Silicon-based IGBT and silicon carbide Schottky diode hybrid grid driving system

Abstract

The invention provides a silicon-based IGBT and silicon carbide Schottky diode hybrid grid driving system. The grid driving system comprises a driving input stage, a logic enabling circuit, a current source circuit, an IGBT grid voltage-to-time change rate detection circuit, an IGBT collector current-to-time second-order differential change rate detection circuit, an IGBT, a Schottky diode D1 and a sampling resistor Rx. All stages of the IGBT starting process are mastered in real time by sampling and detecting the grid voltage VG of the IGBT, the change rate dVG / dt of the grid voltage and the second-order change rate d(dIc / dt) / dt of the collector current, after judgment of the logic enabling circuit and control over the current source circuit in the grid driving circuit, the size of the driving current in the IGBT starting process can be changed, and then the purposes of inhibiting current oscillation to reduce current overshoot and starting loss in the IGBT starting process are achieved.

Description

technical field [0001] The invention belongs to the technical field of analog integrated gate drive circuits, and in particular relates to a gate drive system applied to a silicon-based IGBT-silicon carbide Schottky diode hybrid module. Background technique [0002] High Voltage Integrated Circuit (HVIC) is the product of the combination of microelectronics technology based on low voltage integrated circuits and power electronics technology based on high current and high voltage semiconductors. It satisfies the demand for monolithic interface between low-power level signals and high-power output devices. HVIC is widely used in fields such as motor drives, DC-AC inverters, and automotive power switches due to its low cost and high reliability. With the continuous development of power devices and power integrated circuit technology, the scale of high-voltage integrated circuits is getting larger and larger, and the circuits are becoming more and more complex. and high reliabi...

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Problems solved by technology

[0012] In the prior art, another specific technology of the IGBT gate drive circuit proposed by the Nadir team (see literature: Idir, Nadir, R. Bausiere, and J.J. Franchaud."Active gate voltage control of turn-on di / dt and turn-off dv / dt in insulated gate transistors."Power ElectronicsIEEE Transactions on 21.4(2006):849-855.), such as image 3 As shown, although the gate drive circuit can reduce the loss when the gate is turned on, the effect of suppressing current oscillation is not obvious

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