Silicon-based IGBT and silicon carbide Schottky diode hybrid grid driving system

A technology of Schottky diodes and silicon carbide, which is applied in the direction of voltage/temperature change compensation, electrical components, electronic switches, etc., and can solve the problem that the effect of suppressing current oscillation is not obvious

Active Publication Date: 2017-12-19
SOUTHEAST UNIV +1
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0012] In the prior art, another specific technology of the IGBT gate drive circuit proposed by the Nadir team (see literature: Idir, Nadir, R. Bausiere, and J.J. Franchaud."Active gate voltage control of turn-on di/dt and turn-off dv/dt in insula

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  • Silicon-based IGBT and silicon carbide Schottky diode hybrid grid driving system
  • Silicon-based IGBT and silicon carbide Schottky diode hybrid grid driving system
  • Silicon-based IGBT and silicon carbide Schottky diode hybrid grid driving system

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Embodiment Construction

[0049] The principles and features of the present invention will be described below in conjunction with the accompanying drawings, and the examples given are only used to explain the present invention, and are not intended to limit the scope of the present invention.

[0050] Such as Figure 4As shown, the present invention includes a drive input stage, a logic enable circuit, a current source circuit, a detection circuit (dVG / dt) detection circuit (i.e., a Miller platform detection circuit) of the IGBT base voltage to time, and an IGBT collector current to time The second-order differential rate of change (d(dIc / dt) / dt) detection circuit and IGBT tube, Schottky diode D1 and sampling resistor Rx. As an example, when the IGBT tube is used as an upper tube driven by a half-bridge, its collector is connected to the BUS large voltage; when used as a lower tube driven by a half-bridge, its collector is connected to the emitter of the upper tube; when the IGBT When the tube is used...

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Abstract

The invention provides a silicon-based IGBT and silicon carbide Schottky diode hybrid grid driving system. The grid driving system comprises a driving input stage, a logic enabling circuit, a current source circuit, an IGBT grid voltage-to-time change rate detection circuit, an IGBT collector current-to-time second-order differential change rate detection circuit, an IGBT, a Schottky diode D1 and a sampling resistor Rx. All stages of the IGBT starting process are mastered in real time by sampling and detecting the grid voltage VG of the IGBT, the change rate dVG/dt of the grid voltage and the second-order change rate d(dIc/dt)/dt of the collector current, after judgment of the logic enabling circuit and control over the current source circuit in the grid driving circuit, the size of the driving current in the IGBT starting process can be changed, and then the purposes of inhibiting current oscillation to reduce current overshoot and starting loss in the IGBT starting process are achieved.

Description

technical field [0001] The invention belongs to the technical field of analog integrated gate drive circuits, and in particular relates to a gate drive system applied to a silicon-based IGBT-silicon carbide Schottky diode hybrid module. Background technique [0002] High Voltage Integrated Circuit (HVIC) is the product of the combination of microelectronics technology based on low voltage integrated circuits and power electronics technology based on high current and high voltage semiconductors. It satisfies the demand for monolithic interface between low-power level signals and high-power output devices. HVIC is widely used in fields such as motor drives, DC-AC inverters, and automotive power switches due to its low cost and high reliability. With the continuous development of power devices and power integrated circuit technology, the scale of high-voltage integrated circuits is getting larger and larger, and the circuits are becoming more and more complex. and high reliabi...

Claims

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Application Information

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IPC IPC(8): H03K17/08H03K17/567H03K19/003
CPCH03K17/08H03K17/567H03K19/00369
Inventor 孙伟锋陆扬扬许欢祝靖陆生礼时龙兴
Owner SOUTHEAST UNIV
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