60 results about "Vapor growth" patented technology

In an expanded carbon fiber product according to the present invention, a number of hexagonal carbon layers in the shape of a cup having no bottom are stacked. At least part of edges of the hexagonal carbon layers is exposed at an outer surface or inner surface of the expanded carbon fiber product. At least part of gaps between the hexagonal carbon layers is larger than the gaps between the hexagonal carbon layers at the time of vapor growth.

A fine carbon fiber mixture produced through a vapor-growth process, which comprises fine carbon fiber, each fiber filament of the fiber having an outer diameter of 1 to 500 nm and an aspect ratio of 10 to 15,000 and comprising a hollow space extending along its center axis and a multi-layer sheath structure consisting of a plurality of carbon layers; and non-fibrous carbon such as flake-like carbon, granular carbon, or sheet-like carbon. A composition comprising a resin or a rubber and a fine carbon fiber mixture as above contained therein. An electrically conductive article or a sliding article comprising the composition.

The present invention is to provide a gas barrier film which has a high barrier property, excellent bending resistance and smoothness and suitability for cutting process, a manufacturing method for the same, and an electronic device using the gas barrier film.

A gas barrier film having a base, a first barrier layer formed on the surface of the base by a vapor growth method, a second barrier layer formed by a conversion treatment of a coating film formed by coating the surface of the first barrier layer with a first silicon compound, and a protective layer having no barrier property which is formed by a conversion treatment of a coating film formed by coating the surface of the second barrier layer with a second silicon compound.

The invention relates to a Group III nitride-based compound semiconductor light-emitting device having a well layer, a first layer formed on one surface of the well layer, a second layer formed on the other surface of the well layer, a first region provided in the vicinity of the interface between the first layer and the well layer, and a second region provided in the vicinity of the interface between the second layer and the well layer, wherein the first and second regions are formed such that the lattice constants of the first and second layers approach the lattice constant of the well layer. The invention also relates to a method for producing a Group III nitride-based compound semiconductor light-emitting device having a light-emitting layer of a single or multiple quantum well structure including at least an indium (In)-containing well layer, wherein, during formation of the well layer through vapor growth, an In source is fed through a procedure including: initiating feeding of the In source at a minimum feed rate; subsequently, elevating the In source feed rate to a target feed rate; maintaining the feed rate at the target feed rate; and subsequently, lowering the feed rate from the target feed rate to the minimum feed rate, and a Group III source other than the In source is fed at a constant feed rate from initiation of feeding of the In source to termination of the feeding.

A vapor growth device comprising a reaction container (11), a susceptor (20), a lift pin (13), an upper-side heating device (14a), and a lower-side heating device (14b), a heating ratio between the upper-side heating device and the lower-side heating device being regulated. The surface shape of a silicon epitaxial layer formed near the lift pin and the shape of an uneven portion formed on the rear surface of a silicon epitaxial wafer can be controlled.

Material gas hits the outer peripheral surface of a dam member and rides on the upper surface side, and then is allowed to flow along the main surface of a silicon single-crystal substrate placed on a susceptor. An upper lining member is disposed above the dam member so as to face the dam member. A gas introducing clearance is formed between the dam member and the upper lining member. In a vapor growth device, the upper lining member is regulated in size so that the length, formed in a direction along the horizontal reference line, of the gas introducing clearance gradually decreases as it is away from the horizontal reference line or is kept constant at any position. A vapor growth device capable of making more uniform the flowing route of a material gas flowing on the silicon single-crystal substrate, and a production method for an epitaxial wafer are provided.

A novel fine carbon fiber is produced by vapor growth, in which a graphite-net plane consisting of carbon atoms alone forms a temple-bell-shaped structural unit comprising closed head-top part and body-part with open lower-end, where an angle θ formed by a generatrix of the body-part and a fiber axis is less than 15°, 2 to 30 of the temple-bell-shaped structural units are stacked sharing a central axis to form an aggregate, and the aggregates are connected in head-to-tail style with a distance, thereby forming a fiber. Furthermore, a fine short carbon fibers with excellent dispersibility can be obtained by shortening the fine carbon fiber.

The invention discloses a preparation method of a carbon nano-fiber film, and particularly discloses a method for preparing a high-strength polyacrylonitrile-based carbon nano-fiber film by using electrostatic spinning-high temperature carbonization in combination with a catalytic chemical vapor deposition process. The method comprises the following steps: preparing a polyacrylonitrile-based carbon nano-fiber porous reinforcement with high flexibility but low strength by using electrostatic spinning and high temperature carbonization; and further filling vapor growth carbon nano-fibers into the polyacrylonitrile-based carbon nano-fiber porous reinforcement by using a chemical vapor deposition technology to obtain the carbon nano-fiber film with high flexibility and high strength. Compared with a polyacrylonitrile-based carbon nano-fiber film prepared by merely using an "electrostatic spinning-high temperature carbonization" technology, the carbon nano-fiber film prepared with the method disclosed by the invention has the advantage that the in-plane tensile strength is increased by 80-120 percent.

The invention relates to a lithium-ferrous disulfide battery. The lithium-ferrous disulfide battery comprises a housing, an anode, a cathode, an isolating membrane for isolating the anode from the cathode, and an electrolytic solution, wherein the anode and the cathode are arranged in the housing, the anode contains 80-95% of ferrous disulfide (FeS2) by mass ratio, the cathode is a lithium tablet, solvents for the electrolytic solution comprise 1,3-dioxolane and glycol dimethyl ether, and electrolyte for the electrolytic solution comprises lithium iodide. A manufacturing method for the lithium-ferrous disulfide battery is as follows: adding a proper amount of carbon nanotube, vapor growth carbon fibers, conductive graphite and/or super conductive carbon into the anode, and adding a proper amount of additives such as N,N-dimethyl trifluoroacetamide and the like into the electrolytic solution. The lithium-ferrous disulfide battery manufactured by the manufacturing method is good in discharge performance in wider high and low temperature environments.

A susceptor (2), wherein the semiconductor substrate (W) is supported approximately horizontally in a recess (2c) when performing vapor phase growth of a single crystal thin film on the front surface of the semiconductor substrate (W), and the recess (2c ) includes an outer peripheral recess (20) for supporting a semiconductor substrate (W) and a central recess (21) formed inside the outer peripheral recess (20) and recessed from the outer peripheral recess (20), wherein The outer peripheral side recess (20) includes a substrate supporting surface (20a) inclined downward relative to a horizontal surface from the outer peripheral side toward the central side of the recess (2c), and at least The area outside the inner peripheral edge supports a part of the back surface of the semiconductor substrate (W) located inside the outer peripheral edge of the semiconductor substrate (W).

Affords a method of manufacturing GaN crystal substrate in which enlargement of pit size in the growing of GaN crystal is inhibited to enable GaN crystal substrate with a high substrate-acquisition rate to be produced. The method of manufacturing GaN crystal substrate includes a step of growing GaN crystal (4) by a vapor growth technique onto a growth substrate (1), the GaN-crystal-substrate manufacturing method being characterized in that in the step of growing the GaN crystal (4), pits (6) that define facet planes (5F) are formed in the crystal-growth surface, and being characterized by having the pit-size increase factor of the pits (6) be 20% or less.

A radiation image conversion panel which is excellent in luminance and sharpness is disclosed, comprising a phosphor layer formed on a support by a process of vapor growth, and the support comprising a resin and exhibiting a linear thermal expansion coefficient of 20 to 70 ppm/° C.

A plasma CVD apparatus in which microwave power is supplied into a reaction chamber provided inside an annular waveguide through an antenna provided on the inner peripheral part of the waveguide to produce a plasma inside the reaction chamber and to form a film by a vapor growth synthesizing method. A cooler is disposed between the annular waveguide and the reaction chamber to maintain the low temperature of the annular waveguide.

A method for producing a compound semiconductor wafer used for production of HBT by vapor growth of a sub-collector layer, a collector layer, a base layer and an emitter layer in this turn on a compound semiconductor substrate using MOCVD method wherein the base layer is grown as a p-type compound semiconductor thin film layer containing at least one of Ga, Al and In as a Group III element and As as a Group V element under such growth conditions that the growth rate gives a growth determined by a Group V gas flow rate-feed.

For forming a metal-oxide dielectric film having a perovskite type of crystal structure represented by ABO3 on a base conductor material using organometallic source gases, initial perovskite crystal nuclei or an initial amorphous layer having an amorphous structure are formed on the base conductor material under the first deposition conditions; and a film having a perovskite crystal structure is further grown on the initial crystal nuclei or the initial amorphous layer under the second deposition conditions. In the process, the first deposition conditions meet at least one of the requirements: (a) a lower substrate temperature than that in the second deposition conditions; and (b) a higher source gas pressure than that in the second deposition conditions. This process can be used to deposit a film such as PZT exhibiting a reduced leak current.

The invention relates to a vapor growth graphite fiber composition, its mixture and an application. The VGGF composition comprises a carbon component with content of at least 99.9 weight percentage, the graphitization degree of the carbon component is at least 75%, the carbon component comprises non fibrous carbon and fibrous VGGF, wherein the area ratio of the non fibrous carbon to the fibrous VGGF measured by a scanning electron microscope is less than or equal to 5%. The fibrous VGGF also comprises the graphite fiber in a three-dimensional crosslinked structure, wherein the content of the graphite fiber which is measured by the scanning electron microscope in the three-dimensional crosslinked structure is between 5 area percentages and 50 area percentages in the fibrous VGGF. The VGGF composition and its mixture can be used in the composite materials for increasing the strength, conductive property, heat conduction property and the like of the composite material.

When p-type MgxZn1-xO is grown by an organometallic vapor growth method, a MgxZn1-xO layer is heat treated in an oxygen atmosphere during the growth and/or after the growth completion. In addition, the surface of a substrate to be grown and a material gas are irradiated with a ultraviolet ray when a semiconductor layer is vapor-grown. In addition, when a MgxZn1-xO buffer layer having its c-axis oriented in a layer thickness direction is formed by an atomic layer exitaxy method, a metal mono-atomic layer is grown at first. In addition, a ZnO-based semiconductor active layer is formed by a semiconductor material mainly consisting of ZnO containing Se or Te. A light emitting element is formed by using these techniques.