41results about How to "Uniform film thickness distribution" patented technology

A crucible is a monolithic structure extending over an entire area of a vaporizing chamber and has at least one slit groove provided in the upper surface thereof. The at least one slit groove has a length from one end of the upper surface of the crucible to other end thereof. The at least one slit groove is used as a portion for containing the evaporation material (dopant material or the like). Alternatively, a crucible is a monolithic structure extending over the entire area of the vaporizing chamber and has a plurality of holes provided in the upper surface thereof. The holes are used as portions for containing the evaporation material. Further, the crucible is divided into a plurality of regions, and individual electric heaters are provided under the lower surface of the crucible for the respective regions, whereby temperature can be individually controlled for the respective regions by the electric heaters.

A heating apparatus (101), comprising a hot plate (2) heating a heated substrate (10) by radiation, lift pins (5) liftably disposed in through-holes (6) formed in the hot plate and lifting the heated substrate, and a proximity pin (11) fixed to the hot plate and holding the heated substrate so as to be separated from the hot plate while the heated substrate is heated. Heat reducing parts (13, 7) reducing radiant heat are installed in the hot plate around the proximity pin or around the through-holes.

First and second electrodes are apart from each other in a chamber. Plates are disposed on a substrate in the second electrode. Each of the plates comprises first and second parts for supplying first and second gas to a space between the first and second electrodes, respectively, a first supply path for first gas connected to the first part, and a second supply path for second gas connected to the second part. The substrate comprises a heater for the first gas, a first introducing path for introducing the first gas to the first supply path, and a second introducing path for introducing the second gas to the second supply path. The second supply path comprises a mainstream part without the second part and branch parts with the second part. A connecting portion of the second introducing path and the mainstream part is positioned in an adjacent portion of the plates.

An organic material evaporation source capable of forming a membrane having a uniform membrane thickness distribution with respect to a large-sized substrate and capable of controlling heating temperature and evaporation rate during vapor deposition accurately and with good responsiveness; and an organic vapor deposition device using the source. A vaporization source comprises a vessel main body (31a) having a heating section consisting of a high frequency induction coil (50) and receiving a predetermined organic material, and a lid (31b) having a vaporization port (31c) for the vapor of the organic material to pass therethrough. The arrangement is such that the amount of vapor of the organic material discharged from the vaporization port (31c) in the lid (31b) steadily increases with respect to a two-dimensional position with a predetermined reference position used as a basis.

Provided is a microporous polyolefin membrane which has excellent oxidation resistance, electrolyte injection performance and shutdown characteristics, and which further has excellent permeability and strength balance. This multilayer, microporous polyolefin membrane is obtained by forming a gel-like sheet using a polyolefin resin that contains polypropylene, and by stretching said gel-like sheet in at least one direction and cleaning the same. The membrane has a first microporous layer containing polypropylene; at least one surface layer of the membrane is a first microporous layer, and the electrolyte injection performance is 20 seconds or less. The PP distribution in the first microporous layer is uniform in the in-plane direction, and the shutdown temperature is 132DEG C or less.

There is provided a stimulable phosphor sheet manufacturing apparatus which forms a stimulable phosphor layer through vacuum evaporation in a vacuum chamber. A substrate is conveyed linearly, evaporation sources are arranged in a direction perpendicular to a direction in which the substrate is conveyed, and/or the apparatus includes the evaporation sources relying on resistance heating and a gas introducing nozzle for introducing an inert gas into a vacuum chamber during film formation. A phosphor layer of highly uniform film thickness distribution can be formed.

The present invention provides a magnet unit, which can realize uniform film thickness distribution of a thin film formed on a substrate without increasing the length and width of a target.

The magnet unit 10 includes an annular peripheral magnet 30, which is disposed on the yoke 20 on the back side of a cathode electrode so as to follow the outline of a target 6, and an inner magnet 40 disposed in the peripheral magnet and having a polarity different from the polarity of the peripheral magnet. The magnet unit provides a magnetic track MT that is a set of regions which tangents of magnetic field lines M generated on the target parallels to the target surface. The magnet unit further includes n (n is a positive integer of two or more) extending magnetic pole portions 41 and n−1 projecting magnetic pole portions 32. The n extending magnetic pole portions extend toward the both sides in its longitudinal direction from the central portion of the inner magnet and are adjacent to the both ends in the longitudinal direction of the peripheral magnet, and the n−1 projecting magnetic pole portions protrude inward in the longitudinal direction of the peripheral magnet from the inside of both ends of the peripheral magnet and are located between the n extending magnetic pole portions. The n extending magnetic pole portions and the n−1 projecting magnetic pole portions form 2n−1 folded shape portions U at the both ends in the longitudinal direction of the magnetic track.

The present invention provides a film forming method which can reduce deterioration of film thickness distribution even if the thickness of a film to be formed is extremely small while improving use efficiency of a target and a sputtering apparatus. A film forming method by a sputtering apparatus according to one embodiment of the present invention has a first step of fixing a magnet to a first position and performing film formation on a substrate on a substrate support surface, a second step of moving the magnet to a second position different from the first position after finishing the film formation on the substrate and then fixing it thereto, and a third step of performing film formation on the substrate on the substrate support surface by using the magnet fixed to the second position.

The silicon nitride film-forming method includes a step of supplying a gas material including silane gas, ammonia gas and nitrogen gas in such a manner that a flow rate of the nitrogen gas is 0.2 to 20 times a total flow rate of the silane gas and the ammonia gas, and a step of carrying out inductively coupled plasma-enhanced chemical vapor deposition to form a silicon nitride film. This method is capable of forming a silicon nitride film at a high film deposition rate.

In a thin-film magnetic head having a multilayered film developing a magnetoresistive effect, which is present between an upper shielding layer and a lower shielding layer both formed above an AlTiC substrate, a recess for defining the lower shielding layer is formed in an underlayer present on a surface of the AlTiC substrate, and a lower shielding layer made of NiFe is provided in the recess. A SiO₂ film is interposed between the underlayer and the lower shielding layer.

A barrier-film forming apparatus that forms a barrier film on an inner face of a container having a concave or convex portion as a processing target, including: a dielectric member having a cavity sized to enclose the container, an external electrode covering an outer circumference of the dielectric member, an exhaust unit installed on an end face of the external electrode on a side where a mouth of the container is located, with an insulating member interposed therebetween, and depressurizing inside of the container through an exhaust pipe, an internal electrode inserted from a side of the exhaust pipe and also serving as a gas blowout unit that blows out medium gas for generating a barrier film into the container, and an electric-field applying unit that applies an electric field for generating exhaust between the external electrode and a ground electrode.

The invention relates to the technical field of electrolytic surface treatment, in particular to an electrolysis method of a continuous terminal. Through fully shielding one surface of a material beltthrough a first conveyor belt, and partially shielding the other surface of the material belt through a second conveyor belt, the part, extending out of the outer periphery of the second conveyor belt, of the material belt can be processed, so that the purpose of local processing is realized, and the problem that the existing equipment cannot effectively process the local part of the single surface of the material belt is solved; and the pulse periodic reverse current is applied to the local surface of a continuous terminal material for electrolysis, so that electrolytic precious metal on thesurface of the continuous terminal material is adjusted and controlled to have required uniform precious metal film thickness distribution and excellent corrosion resistance.