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Preparation method of CdS thin-film

A technology of thin films and source materials, applied in the field of solar cells, can solve the problems of high operation requirements of annealing equipment and complicated procedures, and achieve the requirements of reducing sealing and corrosion resistance, as well as the difficulty of operation, uniform film thickness distribution, and labor saving. physical effect

Inactive Publication Date: 2010-09-01
BYD CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0007] The problem to be solved by the present invention is: the annealing treatment in the existing near-space sublimation method, the problem of complicated procedures, high requirements for annealing equipment and operation

Method used

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  • Preparation method of CdS thin-film
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  • Preparation method of CdS thin-film

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preparation example Construction

[0016] A preparation method for a CdS thin film, comprising:

[0017] a, preparation of evaporation source: the source material and CdCl 2 Adding it to a dispersant to make a slurry, coating the slurry on the surface of an evaporation container, and drying to form a source material coating;

[0018] b. Near-space sublimation: at 10 -3 -10 3 Under Pa, under the protection of protective gas, heat the evaporation container to evaporate the coating and deposit a film on the substrate;

[0019] c. Annealing: After the deposition is completed, keep it at a constant temperature for 10-40 minutes at the annealing temperature.

[0020] The source material may be CdS powder, or a mixture of Cd powder and S powder.

[0021] The source material of the present invention is preferably a mixture of Cd powder and S powder, and the mixing ratio of Cd powder:S powder is preferably 1:1-1:1.1.

[0022] The use of a mixture of Cd powder and S powder can reduce the cost of raw materials on the...

Embodiment 1

[0046] a. Preparation of evaporation source: mix Cd powder and S powder with a molar ratio of 1:1.1 to make a mixed powder; mix 95g of mixed powder, 5gCdCl 2 Add to 20 g of propylene glycol and make a slurry by grinding.

[0047] The slurry was coated on the evaporation source container (a high-purity graphite plate with an area of ​​210mm×210mm) by screen printing, and dried at 150°C for 5h to form a source material coating with a thickness of 100μm.

[0048] b. Near-space sublimation: Put the coated evaporation container into the near-space evaporation device, adjust the evaporation distance to 4mm, and feed argon and oxygen with a volume ratio of 1:1, and the air pressure is 100Pa.

[0049] Heat the evaporation vessel to 580°C at a ramp rate of 80°C / min.

[0050] The temperature of the substrate is 500°C, the temperature of the evaporation source is 580°C, and the film thickness of CdS is controlled to be 100nm by the deposition time.

[0051] c. Annealing: After the depo...

Embodiment 2

[0053] The difference from Example 1 is: the mixed powder of 99g, 1gCdCl 2 Add to 30 g of propylene glycol and make a slurry by grinding.

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Abstract

The invention discloses a preparation method of CdS thin-film, which relates to the technical field of solar cells. The method comprises the following steps: Step 1, preparing an evaporation source: source materials and CdC12 are added into dispersant to prepare slurry, and the slurry is coated on the surface of an evaporation vessel and dried, thus forming a source material coating layer; Step 2, close-spaced sublimation: under vacuum condition and at shielding gas atmosphere, the evaporation vessel is heated to enable the coating layer to evaporate, and the film is formed through deposition on a substrate; and Step 3, annealing: after the deposition is finished, the constant temperature is kept for 10-40min at the annealing temperature. By keeping the temperature for some time directly after the deposition is finished, the aim of annealing can be achieved, and the method reduces the requirements on the equipment and saves the processes. The method can enhance the utilization ratio of the source materials greatly; and by adopting the method to prepare a large area of the CdS thin-film, the film thickness is distributed uniformly.

Description

technical field [0001] The invention relates to the technical field of solar cells, in particular to a preparation method of a CdS thin film. Background technique [0002] CdS is a wide bandgap semiconductor material with stable chemical properties. In many solar cells, it is used as an n-type semiconductor layer and absorption layer, such as forming a p-n junction with a p-type layer such as Cu(InGa)Se, CdTe, etc., to form a solar cell. In these devices, light passes through the CdS window layer and is absorbed by the p-type semiconductor near the p-n junction. The performance of the CdS film directly affects the performance of the absorbing layer film prepared on this basis, which is very important to the efficiency and life of the battery. [0003] At present, the closed space sublimation method (closed space sublimation, referred to as CSS) refers to heating the source material powder in the evaporation container under a protective gas atmosphere under a certain vacuum...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/18H01L31/042
CPCC23C14/24H01L21/02557H01L21/02631H01L31/1828C23C14/5806C23C14/0629Y02E10/543
Inventor 蔡志炬曹文玉周勇
Owner BYD CO LTD
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