Raw material composition for CVD and its manufacturing method and chemical gas-phase evaporation plating method of iridium or iridium compound film

A compound and raw material technology, applied in gaseous chemical plating, organic chemistry, metal material coating technology, etc., can solve the problems of narrowing the scope of application, inability to prepare iridium oxide thin film, weak reactivity, etc., and achieve good reactivity Effect

Active Publication Date: 2004-08-04
TANAKA PRECIOUS METAL IND
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the inventors of the present invention have found that the cyclooctadiene-based iridium-based organic iridium compound has a weak reactivity with oxygen, and even if it is formed in an oxygen atmosphere, an iridium oxide thin film cannot be obtained, and only pure iridium can be formed. film
Currently, iridium oxide is being considered as a thin-film electrode for FERAM, so the scope of application of this cyclooctadiene-based iridium compound has to be narrowed.

Method used

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  • Raw material composition for CVD and its manufacturing method and chemical gas-phase evaporation plating method of iridium or iridium compound film
  • Raw material composition for CVD and its manufacturing method and chemical gas-phase evaporation plating method of iridium or iridium compound film
  • Raw material composition for CVD and its manufacturing method and chemical gas-phase evaporation plating method of iridium or iridium compound film

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Experimental program
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Effect test

Embodiment approach 1

[0041] Embodiment 1 (preparation of organic iridium compound) : At 93-95°C, 32.5g (87.5mmol) of iridium chloride trihydrate and 38.64g (271.25mmol) of 2,4-octanedione were heated to reflux in a separable flask with water as a solvent for 2 hours Afterwards, potassium bicarbonate was added therein to adjust the pH of the solution to 8.0 (the addition amount was 60.15 g). Then, the solution was heated to reflux at 93 to 95° C. for 5 hours to allow the reaction to proceed.

[0042] The reaction solution was transferred to a separatory funnel and extracted with benzene. This extraction operation was repeated 4 to 5 times until the benzene layer was transparent. After reducing the weight of the above-obtained extract with a rotary evaporator, extract again with water, and then add anhydrous magnesium sulfate to the extract (benzene layer) to dehydrate the extract. The extract after the dehydration treatment was sucked and filtered to remove magnesium sulfate, and concentrated w...

Embodiment approach 2

[0061] Embodiment 2 (manufacture of iridium oxide thin film) : Hereinafter, using trans-tris(2,4-octanedionate)iridium obtained in Embodiment 1 as a raw material, an iridium oxide thin film was produced by CVD. The reaction conditions in the CVD step were set as follows.

[0062] Raw material heating temperature: 150℃

[0063] Carrier gas (argon) flow: 45sccm

[0064] Reaction gas (oxygen) flow: 45sccm

[0065] Reactor pressure: 530Pa (4 mm Hg)

[0066] Substrate temperature: 350°C

[0067] The morphology of the obtained iridium oxide thin film was observed with an AFM (atomic force microscope). As a result, the surface roughness R MS value is R MS = 2.1 nm, it was confirmed that a thin film with good morphology could be produced.

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Abstract

The present invention relates to a raw material for CVD comprising an organic iridium compound as a main component, said organic iridium compound being tris(2,4-octanedionato)iridium represented by Formula 1. Particularly preferably, the raw material for CVD consists only of the trans isomer of tris(2,4-octanedionato)iridium.

Description

technical field [0001] The present invention relates to the raw materials used in the production of iridium or iridium compound thin films by CVD method and its production method. Background technique [0002] In recent years, precious metals such as iridium and iridium have been used as thin-film electrode materials of various semiconductor devices such as DRAM and FERAM. This is because these noble metals have low resistivity and have good electrical properties when used as electrodes. In particular iridium and its oxides are used as electrodes of FERAM. [0003] As a method of manufacturing a thin film used for a thin film electrode, in addition to the sputtering method, a chemical vapor deposition method (Chemical Vapor Deposition method: hereinafter referred to as a CVD method) is often used. The CVD method is easy to produce a uniform film, especially its step coverage is better than the sputtering method. Since memory devices such as the above-mentioned DRAM and FE...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C07C49/92C23C16/18C23C16/40
CPCC23C16/40C07C49/92C23C16/18
Inventor 寒江威元谷内淳一
Owner TANAKA PRECIOUS METAL IND
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