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Susceptor and vapor growth device

A technology of vapor phase growth and susceptors, applied in the field of susceptors

Active Publication Date: 2006-05-17
SHIN-ETSU HANDOTAI CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] However, when the semiconductor substrate W is placed in the concave portion 201, arc-shaped scratches tend to be generated at the portion where the semiconductor substrate W is in contact with the outer peripheral side concave portion 202.

Method used

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  • Susceptor and vapor growth device
  • Susceptor and vapor growth device
  • Susceptor and vapor growth device

Examples

Experimental program
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Embodiment Construction

[0020] Next, an embodiment of the vapor phase growth apparatus according to the present invention will be described with reference to the accompanying drawings. This embodiment of the vapor phase growth apparatus is a single-wafer type vapor phase growth apparatus that vapor-grows a single-crystal thin film on the front surface of a semiconductor substrate.

[0021] figure 1 It is a longitudinal cross-sectional view of a schematic structure of the vapor phase growth apparatus 100 . The vapor phase growth apparatus 100 is a single wafer type vapor phase growth apparatus, and includes a reactor 1 in which a semiconductor substrate W such as a silicon single crystal substrate or the like is placed.

[0022] The reactor 1 is a reaction chamber having a top wall 1a, a bottom wall 1b and a side wall 1e. The top wall 1a and the bottom wall 1b are made of translucent quartz. A gas supply opening 1c for supplying a reaction gas for vapor phase growth into the reactor 1 and a gas di...

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PUM

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Abstract

A susceptor (2), wherein the semiconductor substrate (W) is supported approximately horizontally in a recess (2c) when performing vapor phase growth of a single crystal thin film on the front surface of the semiconductor substrate (W), and the recess (2c ) includes an outer peripheral recess (20) for supporting a semiconductor substrate (W) and a central recess (21) formed inside the outer peripheral recess (20) and recessed from the outer peripheral recess (20), wherein The outer peripheral side recess (20) includes a substrate supporting surface (20a) inclined downward relative to a horizontal surface from the outer peripheral side toward the central side of the recess (2c), and at least The area outside the inner peripheral edge supports a part of the back surface of the semiconductor substrate (W) located inside the outer peripheral edge of the semiconductor substrate (W).

Description

technical field [0001] The present invention relates to a susceptor on which a semiconductor substrate is placed, and a vapor phase growth apparatus having the susceptor. Background technique [0002] Conventionally, an apparatus for vapor-phase-growing a single-crystal thin film on the front surface of a semiconductor substrate, a so-called single-wafer type vapor-phase growth apparatus, has been known. The single wafer type vapor phase growth apparatus includes a susceptor substantially in the shape of a disk to support a semiconductor substrate, and is configured to heat the substrate on the susceptor from both sides by supplying a reaction gas onto the front surface. Vapor phase growth of single crystal thin films on semiconductor substrates. [0003] More specifically, as Figure 4 As shown, the susceptor 200 includes a recess 201 at the central portion of the front surface, and the semiconductor substrate W is supported within the recess 201 . The concave portion 201...

Claims

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Application Information

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IPC IPC(8): H01L21/205C23C16/458C30B25/12H01L21/68H01L21/683H01L21/687
CPCC23C16/4584C30B25/12H01L21/68735H01L21/68
Inventor 金谷晃一大塚彻大濑广树
Owner SHIN-ETSU HANDOTAI CO LTD
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