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Production method for silicon epitaxial wafer, and silicon epitaxial wafer

A technology of silicon epitaxial wafers and manufacturing methods, applied in chemical instruments and methods, semiconductor/solid-state device manufacturing, gaseous chemical plating, etc., can solve problems such as shape deterioration, and achieve suppression of unevenness, elimination of discrete, good flatness degree of effect

Inactive Publication Date: 2006-11-15
SHIN-ETSU HANDOTAI CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

In this way, the shape is deteriorated due to the formation of protrusions on the back surface of the silicon epitaxial wafer

Method used

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  • Production method for silicon epitaxial wafer, and silicon epitaxial wafer
  • Production method for silicon epitaxial wafer, and silicon epitaxial wafer
  • Production method for silicon epitaxial wafer, and silicon epitaxial wafer

Examples

Experimental program
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Effect test

Embodiment

[0060] Using the ejector-type vapor phase growth apparatus A, the heating ratio of the upper heating device 14a and the lower heating device 14b is changed to (44%:56%), (46%:54%), (48%:52%) , for epitaxial growth. Regarding the silicon epitaxial wafers respectively obtained at this time, the surface shape of the silicon epitaxial layer near the push pin 13 was measured, Figure 5 The measurement results are shown.

[0061] from Figure 5 As a result, it can be seen that when the output of the lower heating device 14b is relatively lower than that of the upper heating device 14a (for example, when the output of the lower heating device is 52%), the surface of the silicon epitaxial layer at the position corresponding to the ejector pin 13 The shape is convex. That is, when the output of the lower heating device 14b is lowered, the temperature of the susceptor 20 is lowered, so the temperature of the back surface of the silicon wafer W is lowered, and the temperature of the m...

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Abstract

A vapor growth device comprising a reaction container (11), a susceptor (20), a lift pin (13), an upper-side heating device (14a), and a lower-side heating device (14b), a heating ratio between the upper-side heating device and the lower-side heating device being regulated. The surface shape of a silicon epitaxial layer formed near the lift pin and the shape of an uneven portion formed on the rear surface of a silicon epitaxial wafer can be controlled.

Description

technical field [0001] The present invention relates to a silicon epitaxial wafer manufacturing method and a silicon epitaxial wafer that vapor phase grows a silicon epitaxial layer on the main surface of a silicon wafer on a susceptor using a vapor phase growth apparatus. Background technique [0002] As a vapor phase growth apparatus for vapor-phase growing a silicon epitaxial layer on the main surface of a silicon wafer, there is known a device having a structure in which a silicon wafer is placed on a susceptor that is loaded into a reaction vessel and placed in the reaction vessel. In the state where the silicon wafer is heated by the upper lamp provided on the upper side of the susceptor and the lower lamp provided on the lower side of the susceptor, and the raw material gas is supplied to the main surface of the silicon wafer, thereby performing In vapor phase growth, the silicon epitaxial wafer obtained by vapor phase growth is output outside the reaction vessel afte...

Claims

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Application Information

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IPC IPC(8): H01L21/205C23C16/46C30B25/02C30B25/12C30B29/06
CPCC30B25/02C30B25/12C30B29/06C30B25/10H01L21/68742
Inventor 金谷晃一西泽毅
Owner SHIN-ETSU HANDOTAI CO LTD
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