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Imaging ellipsometer based on magneto-optical effect

An imaging ellipsometer, magneto-optical effect technology, applied in the direction of surface/boundary effects, instruments, scientific instruments, etc., can solve the limitation of measurement accuracy control accuracy, limited measurement repeatability and stability, and limited ellipsometer measurement speed, etc. problem, to achieve the effect of improving measurement accuracy, high modulation accuracy, and fast modulation speed

Inactive Publication Date: 2010-10-06
TSINGHUA UNIV
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Problems solved by technology

[0004] However, the existing imaging ellipsometer devices usually use stepping motors to change the optical axis direction of the polarizer, compensator or analyzer to achieve measurement. The measurement accuracy is limited by the control accuracy of the mechanical mechanism, and the measurement repeatability and stability limited
In addition, the control speed of the mechanical mechanism also greatly limits the measurement speed of the ellipsometer, which cannot meet the real-time and online measurement requirements

Method used

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  • Imaging ellipsometer based on magneto-optical effect
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  • Imaging ellipsometer based on magneto-optical effect

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Embodiment Construction

[0025] like figure 1 , 4 As shown in and 5, the present invention is characterized by comprising: an incident arm with polarization state and spot size control components, a receiving arm with polarization state and spot size control components, and a control system, wherein:

[0026] Incident arm (1) with polarization state and spot size control components, including: light source (3), collimating beam expanding device (4), polarizer (5), rotating console (6), compensator (7) ), rotating console (8), entrance diaphragm (10), where:

[0027] a light source (3) for emitting single-frequency light for illuminating the object to be measured;

[0028] a collimating beam expanding device (4) for collimating and expanding the laser beam emitted by the laser (3), so that the outgoing light becomes parallel light;

[0029] a polarizer (6) for converting parallel light of any polarization state into linearly polarized parallel light;

[0030] A rotating console (7) is used to rotat...

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Abstract

The invention discloses an imaging ellipsometer based on magneto-optical effect, which relates to a film thickness measurement method and a device, particularly to a method and a device for observing the thickness distribution of a nano film on the surface of a sample. The ellipsometer is characterized in that a polarizer, a compensator and an analyzer capable of rotating in the direction of a transmission axis are adopted to correct a system, a magneto-optical modulation technology is adopted to change the polarization direction of the received light, a plane array detector is adopted to record the ellipsometry images of the film on the surface of the sample, iterative algorithm is adopted to process the data, and the shape parameters of the film on the surface of the sample are precisely measured. The imaging ellipsometer based on magneto-optical effect solves the defects of the prior art, improves the precision in detecting the polarization of the received light, and improves the measurement speed.

Description

technical field [0001] The invention relates to a method and a device for measuring the thickness of a thin film, in particular to a method and a device for observing the thickness distribution of a nanoscale thin film on the surface of a sample. Background technique [0002] Ellipsometry is a measurement technique that uses polarized light to measure film or interface parameters, and obtains parameters such as thickness and refractive index of the sample by measuring the polarization state change of the light reflected (or transmitted) by the measured sample. Ellipsometers are widely used in the determination of film thickness and optical constants, and can measure multilayer films at the same time. Ellipsometer is a fast, high-precision, non-contact optical measuring instrument, which can be used in various complex environments, and can measure the refraction of various semiconductors and their oxide components, gradient films of compound semiconductor components and trans...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G01B11/06G01N13/00G01N21/01G01N21/41
Inventor 吴学健张继涛李岩
Owner TSINGHUA UNIV
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