Coupling structure and coupling method of semiconductor laser chip and silicon optical chip

Abstract

The present invention provides a coupling structure and a coupling method of a semiconductor laser chip and a silicon optical chip. The coupling structure comprises: a laser unit comprising a laser chip; a silicon optical chip provided with a waveguide; and an etching groove arranged at the coupling end of the silicon optical chip and used for connecting with the laser unit and the silicon opticalchip. The coupling structure and the coupling method of the semiconductor laser chip and the silicon optical chip can achieve high-efficiency coupling of the semiconductor laser chip and the siliconoptical chip and facilitates providing of a high-quality light source for the silicon optical hybrid integration, an antireflection film is plated at the coupling end face of the silicon optical chip,the coupling loss and the RIN noise of the laser are reduced, the refractive index matching rubber fills the gap of the laser chip and the silicon optical chip, the scattering loss of the optical field is reduced, and the coupling loss is further reduced.

Description

technical field [0001] The disclosure belongs to the field of photon integration, and more specifically relates to a coupling structure and a coupling method of a semiconductor laser chip and a silicon photonic chip. Background technique [0002] One of the current development trends of optical communication is to achieve integration. Similar to integrated circuits, the optical communication system is integrated on a single optoelectronic chip. Only integration can achieve high density, low cost, and low energy consumption to meet the rapid expansion of information in the information society. . In recent years, silicon-based optoelectronic integration has achieved a series of exciting results, such as silicon-based optical waveguides, optical switches, modulators, and detectors have been realized, but the real silicon-based light source that can be used is still pending. This is mainly because silicon is an indirect bandgap semiconductor, and the radiative recombination pro...

AI Technical Summary

Problems solved by technology

However, the preparation of high-quality light source materials is complicated and immature. The monolithically integrated silicon-based light source has low light output power and poor RIN (relative intensity noise) noise, which cannot meet the needs of high-power and high-performance light sources in many applications.

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