Low-temperature low-pressure preparation method of boron nitride coating

A low-temperature, low-pressure, boron nitride technology, applied in coating, metal material coating process, gaseous chemical plating, etc. Fast speed and other issues, to achieve the effect of easy control, improved mechanical properties, uniform and controllable thickness

Inactive Publication Date: 2016-06-15
SHANGHAI UNIV +1
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  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

It is pointed out in the literature that the temperature of the boron nitride coating interface prepared by CVD/CVI (chemical vapor infiltration) should be 1400~1800°C, but a large number of experiments have proved that within this temperature range, the boron nitride interface prepared by CVD/CVI method Coating, due to the high preparation temperature and high re

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  • Low-temperature low-pressure preparation method of boron nitride coating
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Examples

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Example Embodiment

[0022] Example one:

[0023] In this embodiment, see figure 1 , A method for preparing boron nitride coating at low temperature and low pressure, including the following steps:

[0024] (1) Clean the graphite plate to remove surface dust and other pollutants, and put it into the deposition furnace after drying;

[0025] (2) Vacuum the deposition furnace, fill it with high-purity nitrogen, and repeat the cycle five times to remove the air in the deposition furnace;

[0026] (3) Fill with high-purity nitrogen and heat up to 400℃;

[0027] (4) After the temperature stabilizes, introduce carrier gas nitrogen, carrier gas flow rate 100ml / min, and introduce reaction gas boron trichloride and ammonia gas, of which boron trichloride flow rate is 20ml / min, ammonia flow rate is 60ml / min, and the system is maintained Vacuum degree 10mbar, deposition time 5h;

[0028] (5) After the deposition is over, stop the introduction of boron trichloride and ammonia, reduce the nitrogen flow rate to 20ml / min...

Example Embodiment

[0032] Embodiment two:

[0033] This embodiment is basically the same as the first embodiment, and the special features are:

[0034] In this embodiment, a method for preparing a boron nitride coating at low temperature and low pressure includes the following steps:

[0035] (1) Clean the carbon fiber bundle to remove surface dust and other pollutants, and put it into the deposition furnace after drying;

[0036] (2) This step is the same as the first embodiment;

[0037] (3) Fill with nitrogen and heat up to 500℃;

[0038] (4) After the temperature is stabilized, introduce carrier gas nitrogen, carrier gas flow rate 100ml / min, introduce reactant gases boron trichloride and ammonia gas, of which boron trichloride flow rate is 20ml / min, ammonia flow rate is 80ml / min, and the system is maintained Pressure 8mbar, deposition time 5h;

[0039] (5) After the deposition is over, stop the introduction of boron trichloride and ammonia, reduce the nitrogen flow rate to 20ml / min, quickly increase ...

Example Embodiment

[0041] Embodiment three:

[0042] This embodiment is basically the same as the previous embodiment, and the special features are:

[0043] In this embodiment, see figure 2 , A method for preparing boron nitride coating at low temperature and low pressure, including the following steps:

[0044] (1) Clean 2D-silicon carbide to remove surface dust and other pollutants, and put it into the deposition furnace after drying;

[0045] (2) Vacuum the deposition furnace, fill it with argon, and repeat the cycle five times to remove the air in the deposition furnace;

[0046] (3) Fill with argon gas and heat up to 600℃;

[0047] (4) After the temperature stabilizes, introduce the carrier gas argon, the carrier gas flow rate is 100ml / min, the catalytic gas hydrogen, and the reaction gas boron trichloride and ammonia gas, of which the boron trichloride flow rate is 20ml / min and the ammonia flow rate is 100ml / min, hydrogen flow rate is 20ml / min, the system maintains a pressure of 20mbar, and the ...

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Abstract

The invention discloses a low-temperature low-pressure preparation method of a boron nitride coating. The method of the invention is used for solving the problem that required preparation temperature is high by a chemical vapor deposition method in the prior art. Boron trichloride (BCl3) and ammonia gas (NH3), which are used as main raw materials, undergo chemical vapor deposition under the condition of low temperature; a sample obtained undergoes high-temperature heat treatment; and through Fourier transformed infrared and X-ray diffraction detection, a boron nitride coating which has stronger infiltration capacity, uniformly and controllable thickness and high degree of crystallization is prepared. The method can be used for preparation of a composite material boron nitride interface and for preparation of a sample surface coating. By the method, deposition temperature of boron nitride chemical vapor deposition is reduced from 1300-1800 DEG C to 300-800 DEG C. The method mainly comprises low-temperature chemical vapor deposition and high-temperature heat treatment.

Description

technical field [0001] The invention relates to a preparation method of a functional coating material, in particular to a preparation method of an interface phase control material, which is applied in the technical field of preparation of an interface coating material by a chemical vapor deposition method. Background technique [0002] Boron nitride has many advantages such as light weight, high temperature resistance, oxidation resistance, thermal shock resistance, corrosion resistance, excellent friction and wear properties, and excellent dielectric properties. It is an ideal candidate material for a new generation of high-performance aerospace brake materials, representing The development direction of high-temperature-resistant wave-transparent materials is the ideal interface phase control material that can be selected in ceramic matrix composite materials. Therefore, it has broad application prospects in aerospace, metallurgy, nuclear energy, machinery, electronics and m...

Claims

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Application Information

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IPC IPC(8): C04B41/87C23C16/44C23C16/34C23C16/56
CPCC04B41/87C04B41/5064C23C16/342C23C16/44C23C16/56C04B41/4531
Inventor 李爱军李琳琳高铁王震彭雨晴白瑞成吴彪贾林涛
Owner SHANGHAI UNIV
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