Method and device for preparing rare earth doped gallium nitride light-emitting film

A technology of rare earth doping and luminescent thin film, which is applied in the direction of vacuum evaporation plating, metal material coating process, coating, etc., can solve the problems of unsuitable application fields, expensive equipment and operating costs, etc., and achieve no damage to the doping process, Strong adhesion and high growth rate

Inactive Publication Date: 2007-05-16
WUHAN UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

MBE equipment and operating costs are very expensive
For thin-film crystal displays and solar cells, since glass substrates are generally used, the

Method used

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  • Method and device for preparing rare earth doped gallium nitride light-emitting film

Examples

Experimental program
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Example Embodiment

[0020] Example 1

[0021] There are three magnetron target cells in the vacuum chamber, and the gallium in the two target cells is doped with a single rare earth powder of Tm and Er (particle size 10μm). The doping ratio of Tm to the target is 1 at.%, and the doping ratio of Er to the target is 10 at.%. The other target pool is not doped with rare earth elements. Adjust the distance from the substrate holder to the target surface to 11 cm. Vacuum to 10 -4 Below pa, after the vacuum is stable, pass a mixture of nitrogen and argon 1:99 (volume ratio) to make the working vacuum reach 4.0Pa, and keep the vacuum at this time unchanged. Turn on the water chiller to cool the temperature of the target cell below 10°C. First, the substrate is rotated above the target pool that is not doped with rare earth elements, the DC sputtering power of the target is turned on, and the substrate is not heated, first, a layer of amorphous gallium nitride film is deposited at a low temperature for 5 min...

Example Embodiment

[0022] Example 2

[0023] There are three magnetron target cells in the vacuum chamber. First, the metal gallium in one target cell is doped with Tm and Er rare earth nano-powders (particle size 100nm). The doping amount of Tm is 0.8 at.%, and the doping amount of Er is 1 at.%. The second target pool is doped with Eu element rare earth nano powder (particle size 80nm), and the mass content of Eu element rare earth nano powder is 0.5at.%. The third target pool is not doped with rare earth elements. Adjust the distance from the substrate holder to the target surface to 10cm. Vacuum to 10 -4 Pa below, until the vacuum is stable. A mixture of nitrogen and argon gas at a ratio of 3:5 (volume ratio) is passed through to make the working vacuum reach 0.1Pa and keep the vacuum degree unchanged at this time. Turn on the water chiller to cool the temperature of the target cell below 10°C. Rotate the substrate to the target pool without rare earth elements, turn on the DC sputtering power of...

Example Embodiment

[0024] Example 3

[0025] There are three magnetron target cells in the vacuum chamber. First, the metal gallium in one target cell is doped with Tm and Er rare-earth nano-powders (particle size 50nm), the doping amount of Tm is 0.5at.%, and the doping of Er The amount is 2.0at.%. The second target pool is doped with Eu element rare earth nanopowder (particle size 50nm) and Tm nanopowder (particle size 50nm), the mass content of Eu element rare earth nanopowder is 1.0at.%, and the Tm doping amount It is 1.0at.%. The third target pool is not doped with rare earth elements. Adjust the distance from the substrate holder to the target surface to 8cm. Vacuum to 10 -4Below Pa, after the vacuum is stable. Blow nitrogen to make the working vacuum reach 0.5Pa and keep the vacuum degree unchanged at this time. Turn on the water chiller to cool the temperature of the target cell below 10°C. Rotate the substrate to the target pool without rare earth elements, turn on the DC sputtering power o...

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Abstract

The invention discloses a preparing method of gallium nitride luminous film doped by rare earth, which is characterized by the following: controlling the substrate temperature within 0-500 Deg C; adopting nitrogen or composite gas of nitrogen and argon as splashing gas; proceeding magnetic control splashing for metal gallium of doped rare earth powder in the vacuum; sedimenting rare earth doped gallium nitride luminous film on the substrate of target position. The invention also provides magnetic control splashing device to prepare the product, which contains vacuum chamber; the rotary substrate rack with substrate and 3-5 magnetic targets are set in the vacuum chamber; the magnetic control target is set on the substrate, which makes substrate bottom parallel the magnetic control target; each magnetic control target connects DC anode directly; the cooling chamber is set in the magnetic control target, which possesses cooling dielectric inlet an outlet.

Description

technical field [0001] The invention relates to a method and a device for preparing a rare earth-doped gallium nitride light-emitting thin film. Background technique [0002] At present, domestic GaN:Re devices are generally epitaxially grown on sapphire or Si substrates at a high temperature of 800-1100°C by metal-organic chemical vapor deposition (MOCVD) or molecular beam epitaxy (MBE). The principle of metal-organic chemical vapor deposition (MOCVD) is: the organic metal compound of gallium reacts with nitrogen to form gallium nitride and organic matter, which is a balanced chemical reaction technology; this technology prepares rare earth doped gallium nitride (GaN: Re) Light-emitting devices usually need to inject rare earth elements into gallium nitride thin films by ion beam technology. Rare earth elements are heavy elements with large masses, and ion implantation will inevitably cause serious lattice damage. Molecular beam epitaxy (MBE) technology is to evaporate pur...

Claims

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Application Information

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IPC IPC(8): C23C14/35C23C14/06C23C14/54
Inventor 付德君阴明利郭立平刘传胜
Owner WUHAN UNIV
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