36results about How to "Large film forming area" patented technology

The invention relates to a polycondensation kettle for a falling film outside a vertical tube. The kettle comprises a vertical casing (13); a head and a cone (7) are connected to the upper end and the lower end of the vertical casing (13) respectively; a feed inlet (1) and a heating medium inlet (19) are arranged at the top of the head; a discharge port (6) is arranged at the bottom of the cone (7); a vacuum pumping port (3) is arranged on the upper portion of the vertical casing (13); the feed inlet (1) is communicated with a buffer area between a lower tube plate (15) and a middle tube plate (17) through a pipeline; the vertical tube (12) is arranged in the center of the vertical casing (13), connected with the middle tube plate (17), and communicated with a heating medium outlet (2); and an annular gap (14) is reserved between the vertical tube (12) and the lower tube plate (15), and a central tube (11) arranged in the vertical tube (12) is communicated with the heating medium inlet (19). The polycondensation kettle has the advantages that the film formation of the materials is even, the reaction efficiency can be improved, and the kettle can be used for production of highly viscous polymers such as polyethylene terephthalate (PET).

The invention relates to a preparation method of single-walled carbon nanotubes by a floating catalyst chemical vapor deposition process and a film continuous collection technology thereof, and specifically relates to a gas-phase continuous preparation method of a single-walled carbon nanotube film and a special device. The preparation method comprises the steps of depositing the single-walled carbon nanotubes synthesized by the floating catalyst chemical vapor deposition process onto the surface of a microporous filter membrane moving at a uniform speed by utilizing a gas-phase suction filtration device under normal-pressure and room-temperature conditions, controlling the movement speed of the microporous filter membrane, and regulating and controlling the gas flow balance to obtain a large-area, uniform and density-controllable single-walled carbon nanotube film. According to the gas-phase continuous film-forming technology of the single-walled carbon nanotubes, provided by the invention, the large-scale preparation of the large-area, uniform and density-controllable single-walled carbon nanotube film is realized under the normal-pressure and room-temperature conditions, the preparation method has important significance in promoting the progress of the single-walled carbon nanotube film in the field of large-scale preparation and application of optoelectronic devices, and the film has application in the field of large-scale preparation of the optoelectronic devices.

The invention discloses a preparing method of gallium nitride luminous film doped by rare earth, which is characterized by the following: controlling the substrate temperature within 0-500 Deg C; adopting nitrogen or composite gas of nitrogen and argon as splashing gas; proceeding magnetic control splashing for metal gallium of doped rare earth powder in the vacuum; sedimenting rare earth doped gallium nitride luminous film on the substrate of target position. The invention also provides magnetic control splashing device to prepare the product, which contains vacuum chamber; the rotary substrate rack with substrate and 3-5 magnetic targets are set in the vacuum chamber; the magnetic control target is set on the substrate, which makes substrate bottom parallel the magnetic control target; each magnetic control target connects DC anode directly; the cooling chamber is set in the magnetic control target, which possesses cooling dielectric inlet an outlet.

The invention discloses an LED chip base which uses diamond film as the heat sink material, and a manufacturing method thereof, relating to the LED heat sink technical field. The structure comprises apatching area 1, an electrode routing region 2, a bottom bonding pad 3, an electrical conductive hole 4, a reflecting cup 5, a thermal conduction column 6, a heat dissipation bonding pad 7, a diamondfilm 9, an upper ceramic layer 10 and a lower ceramic layer 20. The method is to grow the CVD diamond film or weld the CVD self-support diamond film on the lower ceramic layer 20 of the ceramic baseto serve as the heat sink system of the LED chip. The invention has good thermal conduction of the heat sink and reduces the thermal resistance of the product to enable the heat to be diffused quickly, thereby improving the LED light-emitting efficiency, upgrading the product reliability and prolonging the service life of the product.

The invention discloses a tube alignment type condensation polymerization reaction kettle. According to the kettle, tube plates (4) are arranged inside a vertical casing (8); the tube plates (4) are connected with a tube alignment (5); material distributors (6) are arranged on the upper end tube openings of the tube alignment (5); annular gaps (7) are arranged between the upper end tube openings of the tube alignment (5) and the material distributors (6); the top end of the vertical casing (8) is provided with a material inlet (1), and the lower end of the vertical casing (8) is provided witha material outlet (10); the lower part of the side surface of the vertical casing (8) is provided with a heating medium inlet tube (2), the upper part of the side surface of the vertical casing (8) is provided with a heating medium outlet tube (3), and the middle-lower part of the side surface of the vertical casing (8) is provided with a vacuum pumping port (9). According to the present invention, material naturally flows downward by gravity, if the tube alignment is large, the film forming of the inner wall of tube alignment is sufficient, such that the blocking problem can not be generated; the tube alignment type condensation polymerization reaction kettle of the present invention has characteristics of good film forming effect, reliable use, and high work efficiency, and can be used for productions of PET and other high viscosity polymers. In addition, a plurality of the tubes can be aligned in the tube alignment.

The invention discloses a melt polycondensation method. Melted monomer blends or prepolymers slide down along the outer walls of tubular falling-film elements so as to be subjected to polycondensation, melts on all the falling-film elements gather at the bottom of a polycondensation reactor so as to be further stirred for reaction and mixed uniformly, and materials are discharged after the reaction finishes. The polycondensation reactor for implementing the method comprises a vertical shell, an end enclosure on the upper end, a bottom shell on the lower end, the falling-film elements, a heat transfer system, a film distributor and a helical ribbon stirrer, wherein the falling-film elements are corrugated pipes with optimized structural parameters. The polycondensation reactor has the advantages of simple structure, sufficient heat exchange, large film forming area, uniform reaction temperature and high polycondensation efficiency, guarantees the laminar flow in the process and can be used for the melt polycondensation of polyethylene glycol terephthalate, polytrimethylene terephthalate, polybutylene terephthalate, polyethylene naphthalate, polyamide and polycarbonate.

The invention relates to a method for melting and polycondensation reaction of falling film between rows of tubes. The melted prepolymer flows downward from the pores between the film cloth plate and the tubes, and forms a waterfall falling film flow between the rows of U-shaped tubes for melting. In the polycondensation reaction, the melt slides from the tubes, gathers at the bottom of the reactor, is stirred and homogenized by the agitator, and then discharged. The reactor for implementing the method is an integral vertical structure, including a shell, a heat medium box at the upper end and a material box connected thereto, a U-shaped pipe, a bottom shell at the lower end, a stirrer, and the like. The U-shaped tubes are hung vertically, arranged in rows, and evenly pass through the pores of the membrane cloth, and the ports of the U-shaped tubes are connected with the heat medium box for the flow of the heat medium. This reactor has the advantages of small flow resistance, no dead zone, large film forming area, fast surface renewal, uniform and controllable residence time, and meets flexible production. It is suitable for the production of polymers such as polyethylene terephthalate .

The invention provides a method for preparing a superconducting single crystal film, the method is a hydrothermal method, and the preparation method comprises the following steps: (1) putting reactants and deionized water into a sealable heating container, (2) Then seal the closed container and heat the reaction; (3) After the reaction, open the closed container to take out the metal substrate, and wash it repeatedly with deionized water to obtain epitaxial growth Superconducting single crystal film. The method of the invention has low energy consumption, low cost and low pollution, and does not need physical high temperature, ultra-high vacuum equipment or high-priced organic source materials and post-treatment of organic matter required by the existing method. The metal substrate can be used, the shape and size of the substrate are not limited, and the method is simple, efficient and easy to promote.

A large area manufacturing method for zinc oxide nano micro generators comprises depositing a gold electrode on a substrate; coating photoresist in a spinning mode to form into a photoresist nano micro wire structure in the Y direction; etching gold electrode materials which are free of photoresist protection through ion beam etching, depositing hard mask material, namely aluminum oxide and etching aluminum oxide materials on the lateral wall to enable the photoresist to be exposed; stripping the photoresist and aluminum oxide on the photoresist through acetone and depositing a zinc oxide film through a sol-gel method; performing photoresist stripping through the ion beam etching and the acetone to form into zinc oxide nano wires; coating photoresist in a spinning mode and exposing the zinc oxide nano wires at two ends after exposure and forming; depositing a platinum electrode through electron beam evaporation, stripping the photoresist through the acetone and etching the aluminum oxide to form into a piezoelectric nano generator structure; exposing the piezoelectric nano generator to a vibration source to generate piezoelectric conversion and nano micro piezoelectric power generation. The large area manufacturing method for the zinc oxide nano micro generators achieves large area controllable production and manufacture of the low cost high mechanical energy to electric energy conversion nano generators.