36results about How to "Large film forming area" patented technology

The invention discloses a preparing method of gallium nitride luminous film doped by rare earth, which is characterized by the following: controlling the substrate temperature within 0-500 Deg C; adopting nitrogen or composite gas of nitrogen and argon as splashing gas; proceeding magnetic control splashing for metal gallium of doped rare earth powder in the vacuum; sedimenting rare earth doped gallium nitride luminous film on the substrate of target position. The invention also provides magnetic control splashing device to prepare the product, which contains vacuum chamber; the rotary substrate rack with substrate and 3-5 magnetic targets are set in the vacuum chamber; the magnetic control target is set on the substrate, which makes substrate bottom parallel the magnetic control target; each magnetic control target connects DC anode directly; the cooling chamber is set in the magnetic control target, which possesses cooling dielectric inlet an outlet.

The invention discloses a melt polycondensation method. Melted monomer blends or prepolymers slide down along the outer walls of tubular falling-film elements so as to be subjected to polycondensation, melts on all the falling-film elements gather at the bottom of a polycondensation reactor so as to be further stirred for reaction and mixed uniformly, and materials are discharged after the reaction finishes. The polycondensation reactor for implementing the method comprises a vertical shell, an end enclosure on the upper end, a bottom shell on the lower end, the falling-film elements, a heat transfer system, a film distributor and a helical ribbon stirrer, wherein the falling-film elements are corrugated pipes with optimized structural parameters. The polycondensation reactor has the advantages of simple structure, sufficient heat exchange, large film forming area, uniform reaction temperature and high polycondensation efficiency, guarantees the laminar flow in the process and can be used for the melt polycondensation of polyethylene glycol terephthalate, polytrimethylene terephthalate, polybutylene terephthalate, polyethylene naphthalate, polyamide and polycarbonate.

The invention relates to a row inter-tube falling film melt phase polycondensation reaction method. A melt prepolymer flows downwards from a film distribution plate and holes between tubes, a waterfall falling film flowing is formed between the U-shaped tubes in rows so that a melt phase polycondensation can be performed, and a melt slides down from the tubes, then condensed at the bottom of a reactor and discharged after stirring is performed to be homogenized through a stirrer. The reactor implementing the method is of an overall vertical structure and comprises a shell, a heating medium box at the upper end, a material box connected with the heating medium box, the U-shaped tubes, a bottom shell at the lower end, a stirrer and the like. The U-shaped tubes are perpendicularly suspended and arranged in rows, uniformly penetrate through holes in the film distribution plate, and the ends of the U-shaped tubes and the heating medium box are communicated to allow a heating medium to flow. The reactor has the advantages that the flowing resistance is small, no dead zone is generated, the film forming area is large, the surface updating speed is high, the standing time is uniform and controllable, and flexible production is met. The method is applicable to production of polyethylene glycol terephthalate and other polymers.

A large area manufacturing method for zinc oxide nano micro generators comprises depositing a gold electrode on a substrate; coating photoresist in a spinning mode to form into a photoresist nano micro wire structure in the Y direction; etching gold electrode materials which are free of photoresist protection through ion beam etching, depositing hard mask material, namely aluminum oxide and etching aluminum oxide materials on the lateral wall to enable the photoresist to be exposed; stripping the photoresist and aluminum oxide on the photoresist through acetone and depositing a zinc oxide film through a sol-gel method; performing photoresist stripping through the ion beam etching and the acetone to form into zinc oxide nano wires; coating photoresist in a spinning mode and exposing the zinc oxide nano wires at two ends after exposure and forming; depositing a platinum electrode through electron beam evaporation, stripping the photoresist through the acetone and etching the aluminum oxide to form into a piezoelectric nano generator structure; exposing the piezoelectric nano generator to a vibration source to generate piezoelectric conversion and nano micro piezoelectric power generation. The large area manufacturing method for the zinc oxide nano micro generators achieves large area controllable production and manufacture of the low cost high mechanical energy to electric energy conversion nano generators.

The invention discloses a devolatilization device and an SAN resin devolatilization process. A material distributor is arranged at a material inlet of the devolatilization device, a plurality of holes are formed in the material distributor, flow guide wires are arranged at the holes, and barbs are arranged on the flow guide wires. According to the devolatilization process, the two-stage series devolatilization device is adopted for removing volatile components, the devolatilization device is adopted for devolatilization, the film forming property of the material is good, the volatile component content of the obtained material is small, and the devolatilization efficiency is high.

The invention relates to a falling film type devolatilizer and a falling film element thereof. The falling film type devolatilizer comprises a vertical shell, a seal head connected with the upper endof the vertical shell, and a bottom shell connected with the lower end of the vertical shell; a material box body and at least one falling film element are arranged in the devolatilizer; the falling film element is provided with a plurality of falling film flow channels; a bottom plate of the material box body is a film distribution plate; and film distribution structures are distributed on the film distribution plate for all the falling film flow channels. The devolatilizer has the advantages of large film forming area, controllable film forming form, wide flow regulation range and the like,and is suitable for devolatilization processes such as high-viscosity polymer production, spinning solution deaeration, solution concentration and the like.

The invention discloses a preparation method for a single-phase P type cuprous oxide thin film. A washed quartz base is fixed to a film-coating fixture at a room temperature by adopting a vacuum electron beam evaporation method, and a metallic copper thin film is deposited under 5.0 * 10<-4> - 7 * 10<-4> Pa; and then the quartz base deposited with the metallic copper thin film is placed in a muffle furnace, thermal oxidation treatment is conducted in an atmospheric environment, and the single-phase P type cuprous oxide thin film is acquired, wherein the optimized thickness of the thin film is 50-150 nm. According to the preparation method for the single-phase P type cuprous oxide thin film, the vacuum electron beam evaporation method and the precise control of the temperature of the follow-up thermal oxidation treatment are combined together, the cuprous oxide thin film prepared by the preparation method is single phase, high in deposition rate and large in film-forming area, the uniform growth of the thin film is achieved, and the thin film can serve as a photocatalytic oxidizing material with a very high application prospect.

The invention belongs to the field of film growth, and particularly relates to an optical constant continuously adjustable film growth method which comprises the following steps: preparing a precursor solution; performing surface treatment on the substrate; after the treatment is completed, a layer of uniform liquid film is adsorbed and grown on the substrate; placing the substrate on which the layer of uniform liquid film is adsorbed and grown in a furnace tube at 300-400 DEG C for low-temperature heat treatment; in order to improve the efficiency and the film quality, after the low-temperature heat treatment is completed, the operations of liquid film growth and low-temperature heat treatment can be repeated to obtain a thicker film layer; the temperature of the furnace tube is increased to 800-1300 DEG C for high-temperature heat treatment, and then the optical thin film with the continuously adjustable optical constant is obtained; by changing the components of the precursor solution, the film deposition condition and the heat treatment condition, the optical constant is continuously adjustable, so that the film system structure of the filter film can be greatly simplified, and the process time and cost are shortened.

The invention relates to the technical field of flame-retardant slice production, in particular to a condensation polymerization vacuum reaction system for flame-retardant slice production and a production process. The hollow coil spring is arranged in the kettle body; the feeding pipe extends into the kettle body and is used for conveying materials to the upper end of the hollow coil spring so as to enable the materials to flow downwards along the side wall of the hollow coil spring; the first pipe and the second pipe are respectively communicated with two ends of the hollow coil spring and are matched to drive the hollow coil spring to contract and contract so as to promote heat exchange between fluid in the hollow coil spring and materials; the device has the advantages of high heat exchange efficiency, high polymerization reaction rate, high byproduct discharge rate and high product yield.

This invention provides a preparation for binary rare earth compound thin films. A low-energy double ion beam deposition apparatus is adopted for its function of mass separation and characteristics of energetic ion deposition, and rare earth chlorides of which purity is not highly required serve as raw materials for I beam of Bonus solid ion source to give out an isotopic pure low-energy rare earth ion beam, which with another isotopic pure low-energy ion from II beam of Bonus gaseous ion source is deposited alternately in ultravacuum cultivation room. By exactly controlling the energy of the isotopic pure low-energy ions, beam shape, beam flux, beam proportion and growing temperature, deposition and low-temperature epitaxy of binary rare earth compounds which have high temperatures and are difficult to purify and easy to oxidized can be realized. A wide variety of rare earth thin films can be prepared according to this invention and the technique is convenient to modulate and optimized, which is economical to manufacture rare earth thin films used in semiconductor technology and some other fields.

The invention discloses a film coating carrier which comprises a carrier body and a plurality of placing parts for containing silicon wafers, wherein the placing parts are evenly distributed in the longitudinal direction and the transverse direction of the carrier body; each placing part comprises a first frame body and a second frame body, and the first frame body is arranged on the outer side of the second frame body; a plurality of supporting points are oppositely arranged on the inner side wall of the second frame body; the invention also discloses a method for increasing the TCO coating area of the heterojunction solar cell. The method comprises the following steps: (1) texturing and cleaning a crystal silicon wafer; (2) preparing a double-intrinsic amorphous silicon layer on the front surface of the crystal silicon wafer, and then preparing a double-doped amorphous silicon layer; (3) placing the prepared silicon wafer of the double-doped amorphous silicon layer on the placing part of the coating carrier, and then preparing a conductive thin film layer and a mask region on the double-doped amorphous silicon layer respectively; (4) forming a metal electrode on the conductive film layer in a silk-screen printing manner. When the coating carrier is applied to a subsequent coating method, the TCO coating area can be increased.