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Hydrothermal preparation method of superconducting single crystal film and product thereof

A hydrothermal method and superconducting technology, applied in the field of materials, can solve the problems of high energy consumption, inability to grow high-temperature and easy-to-decompose thin film materials, high pollution, etc., and achieve low energy consumption, simple and efficient method, easy to promote, and large film-forming area.

Active Publication Date: 2020-09-01
INST OF PHYSICS - CHINESE ACAD OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

At present, the preparation methods of superconducting single crystal thin films mainly include vacuum physical high temperature pulsed laser deposition (PLD) method, molecular beam epitaxy (MBE), magnetron sputtering method and chemical synthesis methods such as chemical vapor deposition (CVD) and sol-gel. (sol-gel), etc., all require high temperature heating and high cost (or ultra-high vacuum or involving complex organic matter recovery, etc.)
Existing technologies have high energy consumption, high cost, and high pollution (need physical high temperature, ultra-high vacuum equipment, high-priced organic source materials and organic post-treatment), it is difficult to grow thin films in non-planar cavities, and it is impossible to grow high-temperature easily decomposed thin-film materials (such as containing Hydroxyl (Li,Fe)OHFeSe superconducting material)

Method used

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  • Hydrothermal preparation method of superconducting single crystal film and product thereof
  • Hydrothermal preparation method of superconducting single crystal film and product thereof
  • Hydrothermal preparation method of superconducting single crystal film and product thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1～15

[0043] This example is used to illustrate the growth of a high-quality FeSe single crystal thin film on a metal substrate by soft chemical method.

[0044] Table 1 Reaction conditions for growing FeSe single crystal thin films

[0045]

[0046]

[0047] Specifically include the following steps:

[0048] (a) Put 0.01mol of selenourea, 0.02mol of iron powder, 0.03mol of catalyst NaF and 5ml of deionized water into a sealable heating container, stir and mix well with a glass rod, and put it into a polished metal substrate FeTe. All reagents were purchased from AlfaAesar company with a purity higher than 4N.

[0049] (b) Then seal the closed container, put it into an oven, heat it from room temperature to 130 °C at a rate of 2 °C / min, react at this temperature for 7 days, then stop the heat preservation, and cool naturally to room temperature.

[0050] (c) After the reaction, open the closed container to take out the metal substrate, and wash it repeatedly with deionized w...

Embodiment 16～27

[0058] This example is used to illustrate the growth of high-quality (Li, Fe)OHFeSe single crystal thin films on metal substrates by soft chemical method.

[0059] Table 3 Reaction conditions for growing (Li,Fe)OHFeSe single crystal thin films

[0060]

[0061] (a) 0.01mol of selenourea, 0.015mol of iron powder, LiOH·H 2 O0.01mol and 5ml deionized water are put into a closed heating container, stirred and mixed fully with a glass rod, and put into a polished metal substrate FeTe. All reagents were purchased from AlfaAesar company with a purity higher than 4N.

[0062] (b) Then seal the closed container, put it into an oven, heat it from room temperature to 130 °C at a rate of 2 °C / min, react at this temperature for 7 days, then stop the heat preservation, and cool naturally to room temperature.

[0063] (c) After the reaction, open the closed container to take out the metal substrate, and wash it repeatedly with deionized water to obtain a (Li,Fe)OHFeSe superconducting si...

Embodiment 28-32

[0071] Adopt the method similar to embodiment 1-27, also can be used for growing transition metal dichalcogenide film MX 2 , where M is transition metal Ti, Nb, Ta, Mo, W; X is chalcogen element S, Se, Te, and the specific reactants and conditions are shown in Table 5.

[0072] Table 5 Transition metal dichalcogenide films MX prepared under different reaction conditions 2

[0073]

[0074]

[0075] The doping of chalcogen elements only needs to add substances that can provide the required chalcogen elements for hydrothermal reaction. It is not required to be the above reagents. The substrate can also be adjusted according to the actual situation, including various single crystals or alloys. , as long as the substrate surface is smooth and does not participate in the hydrothermal reaction.

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Abstract

The invention provides a preparation method of a superconducting single crystal film, which is a hydrothermal method and comprises the following steps: (1) putting reactants and deionized water into asealable heating container, fully stirring and mixing, and putting a metal substrate in; (2) sealing the sealable container, and heating for reaction; and (3) after the reaction is finished, openingthe sealable container, taking out the metal substrate, and repeatedly cleaning with deionized water to obtain the superconducting single crystal film capable of realizing epitaxial growth. The methoddisclosed by the invention is low in energy consumption, low in cost and low in pollution, and does not need physical high-temperature and ultrahigh-vacuum equipment or high-valence organic source material and organic matter post-treatment required by the existing method. A metal substrate can be used, the shape and size of the substrate are not limited, and the method is simple, efficient and easy to popularize.

Description

technical field [0001] The invention belongs to the field of materials, and in particular relates to a method for preparing a superconducting single crystal film, as well as products and applications thereof. Background technique [0002] High-quality superconducting thin films and strips are widely used in basic superconducting theory research and practical applications. Weak current applications include but are not limited to: superconducting microwave devices, superconducting computers, superconducting antennas, and superconducting high-frequency detectors. Strong electric applications include but are not limited to: superconducting strong magnets (medical magnetic resonance imaging systems, nuclear fusion reactor magnet systems, particle accelerator resonators, etc.), superconducting current limiters (stabilizing power grids), superconducting power transmission, superconducting energy storage are all critical. At present, the preparation methods of superconducting singl...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C30B29/46C30B29/64C30B7/10C30B7/14H01B12/06
CPCC30B29/46C30B29/64C30B7/005C30B7/10C30B7/14H01B12/06Y02E40/60
Inventor 董晓莉刘少博马晟周放赵忠贤
Owner INST OF PHYSICS - CHINESE ACAD OF SCI
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