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A method for manufacturing a large-area zinc oxide nano-micro generator

A manufacturing method and large-area technology, applied in the manufacturing/assembly of piezoelectric/electrostrictive devices, circuits, electrical components, etc., can solve the problems of expensive equipment and small deposition area, and achieve low cost and large film-forming area. , The effect of large-area controllable production and processing

Active Publication Date: 2017-05-10
NANJING YIDEGUAN ELECTRONICS TECH +1
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  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The high plasma energy of PLD can increase the migration energy of atoms along the substrate surface, so that the thin film grows preferentially in the c-axis direction but the deposition area is small
Magnetron sputtering can realize the preparation of large-area piezoelectric materials, but the equipment is expensive

Method used

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  • A method for manufacturing a large-area zinc oxide nano-micro generator
  • A method for manufacturing a large-area zinc oxide nano-micro generator
  • A method for manufacturing a large-area zinc oxide nano-micro generator

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0040] Example 1 Preparation of large-area ZnO thin films by sol-gel method

[0041] The preparation of large-area ZnO thin films by sol-gel method comprises the following steps:

[0042] 1) Preparation of sol solution: Mix 3.8412g zinc acetate dihydrate with 50ml ethylene glycol methyl ether to obtain a 0.35mol / L zinc acetate dihydrate ethylene glycol methyl ether solution, then add 1.4ml ethanolamine, and use magnetic The stirrer was fully stirred for 2 hours under the condition of 60°C water bath, and the solution was colorless and transparent. Aging at room temperature for 24 hours to obtain a sol solution;

[0043] 2) Cleaning of the substrate: Clean the 6-inch Si silicon wafer with an acetone solution in an ultrasonic cleaner for 30 minutes, then use ethanol for 30 minutes, then deionized water for 15 minutes, and then use HF: deionized water = 1:10 (volume than) the prepared dilute hydrofluoric acid solution to soak the substrate for 10 minutes, rinse it with deionize...

Embodiment 2

[0051] Embodiment 2 The manufacturing method of large-area ZnO nano-micro generator is characterized in that it comprises the following steps:

[0052] Step 1. Deposit Au electrodes on the cleaned 6-inch Si (100) substrate by electron beam evaporation deposition method; set the rate to 3 angstroms per second, select the high voltage as 600V, set the current to 300-350mA, and power to 180 watts ;

[0053] The second step is to spin coat the photoresist, and spin the Suzhou Ruihong RZJ-304 positive photoresist on the homogenizer at a low speed of 500rpm for 5s, and a high speed of 3000rpm for 30s. Using an ABM lithography machine to expose for 8s, the light intensity is 15mw / cm 2 ;The development time of photoresist depends on the development effect, and the development time depends on the development effect, generally between 8-15 seconds, forming a side wall structure in the Y direction;

[0054] In the third step, the Au without photoresist protection is etched away by ion ...

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Abstract

A method for manufacturing large-area ZnO nano-microgenerators, depositing Au electrodes on the substrate; spin-coating photoresist to form a photoresist nano-micron line structure in the Y direction; etching away the remaining photoresist through ion beam etching Protect the Au electrode material, then deposit the hard mask material aluminum oxide, and etch away the aluminum oxide material on the side wall to expose the photoresist; use acetone to peel off the photoresist and the Al2O3 on it, and use the sol-gel method to deposit ZnO Thin film; photoresist stripping using ion beam etching and acetone to form ZnO nanowires; spin-coating photoresist, exposing the ZnO nanowires at both ends after exposure and molding; using electron beam evaporation to deposit Pt electrodes; using acetone to strip off the light Resist, etching to remove Al2O3, and the piezoelectric nanogenerator structure is exposed; the piezoelectric nanogenerator is exposed to the vibration source to produce piezoelectric conversion and nano-micro piezoelectric power generation. Achieve large-area controllable production and processing of low-cost, high-mechanical-electrical energy conversion nanogenerators.

Description

technical field [0001] The invention belongs to the field of manufacturing nanomaterials and nanodevices, and in particular relates to a method for manufacturing large-area zinc oxide nano-micro generators. Background technique [0002] Piezoelectric nanopower generation is a solution for sensor micropower in sensor networks. Chemically synthesized ZnO vertical piezoelectric nanowires can convert vibrational mechanical energy into electrical energy, achieving a peak voltage of 1.26 V and a peak power of 2.7 mW / cm 3 Output. The advantage of piezoelectric nanowires is high sensitivity and the ability to extract energy from sufficiently small natural sources. Although large piezoelectric potentials can also be observed on other non-ZnO nanowires, ZnO nanowires with both semiconducting and piezoelectric properties can complete the efficient conversion of mechanical energy to electrical energy. Conventional piezoelectric materials, such as PZT, are usually insulators. Althoug...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L41/39H01L41/318H10N30/093H10N30/078
Inventor 章伟高志强王瑞秦薇薇李涛许泳杨楠蔡依晨李雨桐徐玫瑰
Owner NANJING YIDEGUAN ELECTRONICS TECH
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