Hydrothermal preparation method and product of superconducting single crystal film

A superconducting film and superconducting technology, applied in the field of materials, can solve the problems of inability to grow high-temperature and easily decomposed thin-film materials, high cost, high pollution, etc. The method is simple, efficient and easy to promote, the shape and size are not limited, and the film-forming area big effect

Active Publication Date: 2021-12-28
INST OF PHYSICS - CHINESE ACAD OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

At present, the preparation methods of superconducting single crystal thin films mainly include vacuum physical high temperature pulsed laser deposition (PLD) method, molecular beam epitaxy (MBE), magnetron sputtering method and chemical synthesis methods such as chemical vapor deposition (CVD) and sol-gel. (sol-gel), etc., all require high temperature heating and high cost (or ultra-high vacuum or involving complex organic matter recovery, etc.)
Existing technologies have high energy consumption, high cost, and high pollution (need physical high temperature, ultra-high vacuum equipment, high-priced organic source materials and organic post-treatment), it is difficult to grow thin films in non-planar cavities, and it is impossible to grow high-temperature easily decomposed thin-film materials (such as containing Hydroxyl (Li,Fe)OHFeSe superconducting material)

Method used

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  • Hydrothermal preparation method and product of superconducting single crystal film
  • Hydrothermal preparation method and product of superconducting single crystal film
  • Hydrothermal preparation method and product of superconducting single crystal film

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1～15

[0043] The present examples serve to illustrate the metal substrate by the growth of high quality single crystal thin film FeSe soft chemistry.

[0044] Table reaction conditions for growing a single crystal thin film FeSe

[0045]

[0046]

[0047] Specifically, the following steps:

[0048] (A) 0.01 mol of urea selenium, iron 0.02 mol, catalyst and NaF 0.03mol 5ml of deionized water, heating the vessel charged with a closable, sufficiently mixed with stirring with a glass rod and placed in a metal substrate polished FeTe. All reagents were purchased from AlfaAesar Corporation, purity higher than 4N.

[0049] (B) the closed container is then sealed, placed in an oven at a rate of 2 ℃ / min from room temperature to 130. deg.] C, reacted at this temperature for seven days, and then incubated stopped, cooled to room temperature.

[0050] After (c) the reaction, remove the metal substrate to open the closed container, and washed repeatedly with deionized water to obtain a single ...

Embodiment 16～27

[0058] Examples for explaining the present embodiment on a substrate by a metal (Li, Fe) OHFeSe growth of high quality single crystal thin film of soft chemistry.

[0059] Table 3 Reaction conditions of growth (Li, Fe) OHFeSe single crystal thin film

[0060]

[0061] (A) the selenourea 0.01mol, iron 0.015mol, LiOH · H 2 O0.01mol and 5ml of deionized water, may be charged with a closed heating vessel and stirred thoroughly mixed with a glass rod and placed in a metal substrate polished FeTe. All reagents were purchased from AlfaAesar Corporation, purity higher than 4N.

[0062] (B) the closed container is then sealed, placed in an oven at a rate of 2 ℃ / min from room temperature to 130. deg.] C, reacted at this temperature for seven days, and then incubated stopped, cooled to room temperature.

[0063] After (c) the reaction, remove the metal substrate to open the closed container, and washed repeatedly with deionized water to obtain a (Li, Fe) OHFeSe superconducting single cry...

Embodiment 28-32

[0071] Similar procedure as in Example 1-27, it can be used for the growth of the transition metal dichalcogenide film MX 2 Wherein, M being a transition metal Ti, Nb, Ta, Mo, W; X is a chalcogen S, Se, Te, specific reactants and conditions are shown in Table 5.

[0072] The transition metal disulfide Table 5 were prepared under different reaction conditions chalcogenide film MX 2

[0073]

[0074]

[0075] Doping substance chalcogen may require only provide the desired chalcogen hydrothermal reaction, the reagent is not required to be, the substrate may be adjusted according to actual conditions, including various types of a single crystal or an alloy , only smooth the surface of the substrate, and does not participate in the hydrothermal reaction.

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Abstract

The invention provides a method for preparing a superconducting single crystal film, the method is a hydrothermal method, and the preparation method comprises the following steps: (1) putting reactants and deionized water into a sealable heating container, (2) Then seal the closed container and heat the reaction; (3) After the reaction, open the closed container to take out the metal substrate, and wash it repeatedly with deionized water to obtain epitaxial growth Superconducting single crystal film. The method of the invention has low energy consumption, low cost and low pollution, and does not need physical high temperature, ultra-high vacuum equipment or high-priced organic source materials and post-treatment of organic matter required by the existing method. The metal substrate can be used, the shape and size of the substrate are not limited, and the method is simple, efficient and easy to promote.

Description

Technical field [0001] The present invention belongs to the field of materials, particularly relates to a method for preparing a superconducting film of single crystal, its products and applications. Background technique [0002] And a high-quality superconducting thin film strip line both for fundamental research or the actual superconducting widely used, including but not limited to weak applications: superconducting microwave devices, a superconducting computer, a superconducting antenna, a superconducting radio-frequency detector. Ferroelectric applications include, but are not limited to: strong superconducting magnet (medical magnetic resonance imaging system, the magnet system nuclear fusion reactor, a particle accelerator cavity, etc.), the superconducting current limiter (stabilize the grid), superconducting power transmission, SMES They are essential. Currently preparing superconducting single crystal thin film including a high temperature vacuum physics pulsed laser de...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C30B29/46C30B29/64C30B7/10C30B7/14H01B12/06
CPCC30B29/46C30B29/64C30B7/005C30B7/10C30B7/14H01B12/06Y02E40/60
Inventor 董晓莉刘少博马晟周放赵忠贤
Owner INST OF PHYSICS - CHINESE ACAD OF SCI
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